NE97833

PNP SILICON HIGH FREQUENCY TRANSISTOR FEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 5.5 GHz TYP HIGH SPEED SWITCHING CHARACTERISTICS NPN COMPLIMENT AVAILABLE: NE02133 HIGH INSERTION POWER GAIN: |S21E|2 = 10 dB at 1 GHz NE97833 33 (SOT 23 STYLE) DESCRIPTION The NE97833 PNP silicon transistor is designed for ultrahigh speed current mode switching applications and microwave amplifiers up to 3.5 GHz. The NE97833 offers excellent performance and reliability at low cost. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT NF |S21E|2 hFE ICBO IEBO C RE2 NE97833 2SA1978 33 UNITS GHz dB dB 8.0 20 µA µA pF mW 0.5 MIN 4.0 TYP 5.5 2.0 10.0 40 100 -0.1 -0.1 1.0 200 3.0 MAX PARAMETERS AND CONDITIONS Gain Bandwidth Product at VCE = -10 V, IC = -15 mA Noise Figure at VCE = -10 V, IC = -3 mA Insertion Power Gain at VCE = -10 V, IC = -15 mA, f = 1 GHz Forward Current Gain Ratio at VCE = -10 V, IC = -15 mA Collector Cutoff Current at VCB = -10 V, IE = 0 Emitter Cutoff Current at VBE = -2 V, IC = 0 Feedback Capacitance at VCB = -10 V, IE = 0 mA, f = 1 MHz Total Power Dissipation PT Notes: 1. Electronic Industrial Association of Japan. 2. Capacitance is measured with emitter and case connected to the guard terminal at the bridge. California Eastern Laboratories NE97833 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS VCBO VCEO VEBO IC TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Coll...