NEL200101-24

DATA SHEET SILICON POWER TRANSISTOR NEL200101-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier DESCRIPTION AND APPLICATIONS NEL2001012-24 of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications. It incorporates emitter ballast resistors, gold metallizations and offers a high degree of reliability. OUTLINE DIMENSIONS (Unit: mm) 1.0 MIN. 1.0 MIN. 0.2 1.2 –0.1 +0.2 1.5 ±0.2 3 FEATURES φ 7 ±0.3 High Linear Power and Gain Low Internal Modulation Distortion High Reliability Gold Metallization 24 V Operation 1.6 ±0.3 2 2 ±0.2 Emitter Ballasting 0.1 –0.04 +0.06 3.0 6.2 ±0.2 1 1 - EMITTER 2 - BASE 3 - COLLECTOR ABSOLUTE MAXIMUM RATING (TA = 25 ˚C) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector to Emitter Voltage Collector Current Power Dissipation Thermal Resistance Junction Temperature Storage Temperature SYMBOL VCBO VCER VEBO VCEO IC PT Rth(j-c) Tj Tstg R = 10 Ω SPECIFIED CONDITION RATINGS 45 30 3 18 0.5 7.4 23.6 200 –65 to 150 10 ±0.3 UNIT V V V V A W ˚C/W ˚C ˚C Document No. P11581EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan © 1996 NEL200101-24 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) PARAMETER Collector to Emitter Cutoff Current Collector to Emitter Voltage (Base to Emitter Registor = 10 Ω) Collector to Emitter Voltage (Open Base) Collector to Base Voltage (Open Emitter) Emitter to Base Voltage (Open Collector) DC F...