PRELIMINARY DATA SHEET
SILICON POWER TRANSISTOR
NEL2012F03-24
NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER
...
PRELIMINARY DATA SHEET
SILICON POWER
TRANSISTOR
NEL2012F03-24
NPN SILICON EPITAXIAL
TRANSISTOR L BAND POWER AMPLIFIER
DESCRIPTION
The NEL2012F03-24 of
NPN epitaxial microwave power
transistors is designed for 1.8 GHz-2.0 GHz PCN/PCS/ PHS base station applications. It is corporate emitter ballast resistors, gold metalizations and offers a high degree of reliability.
FEATURES
High Linear Power and Gain Low Internal Modulation Distortion High Reliability Gold Metalization Emitter Ballasting 24 V Operation
APPLICATION
Digital Cellular : PCN/PCS etc. Digital Cordless : PHS etc.
ORDERING INFORMATION
Part Number NEL2012F03-24 Package Outline F03
PACKAGE DIMENSIONS
(Unit: mm)
2.8 ± 0.2
6.35 ± 0.4
PIN CONNECTIONS
1. EMITTER 2. BASE 3. COLLECTOR
14.35 ± 0.4 4.67 ± 0.4
2 × φ 3.3 ± 0.3 1
2
3
2.17 ± 0.3 0.1+0.05 –0.02
18.9 ± 0.3 14.2 ± 0.3 6.35 ± 0.4
The information in this document is subject to change without notice.
Document No. P11768EJ1V0DS00 (1st edition) Date Published June 1997 N Printed in Japan
1.53 ± 0.3
©
1996
NEL2012F03-24
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector to Emitter Voltage Collector Current Total Power Dissipation Thermal Resistance Junction Temperature Storage Temperature SYMBOL VCBO VCER VEBO VCEO IC PT Rth (j-c) Tj Tstg R = 10 : Specified Condition RATINGS 45 30 3 18 4 41.5 4.2 200 ð65 to +150 UNIT V V V V A W °C/W °C °C
ELECTRICAL CHARACTERISTICS (TA...
