NES1823P-30

PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES1823P-30 30 W L-S BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES1823P-30 is a 30 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS and IMT 2000 base station systems. It is capable of delivering 30 watts of output power (CW) with high linear gain, high efficiency and excellent distortion. Its primary band is 1.8 to 2.3 GHz, however with different matching, 60 MHz or less of instantaneous bandwidth can be achieved anywhere from 0.8 to 2.3 GHz. thermal characteristics, and reliability. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures. The device employs 0.9 µm Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for superior performance, FEATURES Push-pull type N-channel GaAs MES FET High output power High linear gain : 30 W TYP. : 13 dB TYP. High power added efficiency : 40 % TYP. @VDS = 10 V, IDset = 4 A, f = 2.2 GHz ORDERING INFORMATION (PLAN) Part Number NES1823P-30 T-86 Package Supplying Form − Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: NES1823P-30) ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Operation in excess of any one of these parameters may result in permanent damage. Parameter Drain to Source Voltage Gate to Source Voltage Gate to Drain Voltage Drain Current Gate Current Total Power Dissipation Channel Temperat...