NES2427P-60

PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES2427P-60 60 W S-BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES2427P-60 is a 60 W push-pull type GaAs MES FET designed for high power transmitter applications for MMDS, WLL repeater and base station systems. It is capable of delivering 60 W of output power (CW) with high linear gain, high efficiency and excellent distortion. Its primary band is 2.4 to 2.7 GHz. The device employs 0.9 µm Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for superior performance, thermal characteristics, and reliability. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures. FEATURES Push-pull type N-channel GaAs MES FET VDS = 10.0 V operation High output power: PO (1 dB) = 60 W TYP. High linear gain: GL = 12.0 dB TYP. High power added efficiency: ηadd = 35 % TYP. @ VDS = 10.0 V, IDset = 12.0 A (total), f = 2.50, 2.70 GHz ORDERING INFORMATION (PLAN) Part Number NES2427P-60 Package T-92 Supplying Form ESD protective envelope Remark To order evaluation samples, consult your NEC sales representative. Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative...