NES2527B-30

PRELIMINARY DATA SHEET GaAs MES FET NES2527B-30 30 W S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NES2527B-30 is power GaAs FET which provides high output power and high gain in the 2.5 - 2.7 GHz band. Internal input matching circuits are designed to optimize performance. The device has a 0.8 µm gate length for increased linear gain. technology. The device incorporates WSi (tungsten silicide) gate for high reliability and SiO2 glassivation for stability. surface To reduce thermal 17.4±0.3 PACKAGE DIMENSIONS (UNIT: mm) 24±0.3 20.4 SOURCE 1.0±0.1 GATE 2.4 8.0 R1.2 resistance, the device uses PHS (Plated Heat Sink) DRAIN FEATURES High output power High gain High power added efficiency Internally matched input High reliability 2.4 0.1 4.5 MAX 1.8 0.2 MAX QUALITY GRADE Standard Please refer to “Quality grade on NEC Semiconductor Devices” (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate to Source Voltage Gate to Drain Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature VDS VGS VGD ID IG PT(*) Tch Tstg 15 −7 −18 27 180 110 175 −65 to +175 V V V A mA W °C °C * TC = 25 °C The information in this document is subject to change without notice. Document No. P12381EJ1V0DS00 (1st edition) Date Published February 1997 N Printed in Japan © 19...