PRELIMINARY DATA SHEET
NEC's NPN SiGe TRANSISTOR NESG2046M33 FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
FEATURES
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IDEA...
PRELIMINARY DATA SHEET
NEC's
NPN SiGe
TRANSISTOR NESG2046M33 FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
FEATURES
IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS:
NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE
TRANSISTORS :
VCEO (absolute maximum ratings) = 5.0 V
3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGE
ORDERING INFORMATION
PART NUMBER NESG2046M33-A NESG2046M33-T3-A QUANTITY 50 pcs (Non reel) 10 kpcs/reel SUPPLYING FORM 8 mm wide embossed taping Pin 2 (Base) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA =+25ºC)
PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC Ptot
Note
RATINGS 13 5 1.5 40 130 150 −65 to +150
UNIT V V V mA mW °C °C
Tj Tstg
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
California Eastern Laboratories
NESG2046M33 ELECTRICAL CHARACTERISTICS (TA =+25ºC)
PARAMETER DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Gain Bandwidth Product Insertion Power Gain Noise Figure Associated Gain Reverse Transfer Capacitance fT |S21e| NF Ga Cre...