Document
PRELIMINARY DATA SHEET
GaAs MES FET
4W/8W C-BAND POWER GaAs FET NEZ Series
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
DESCRIPTION
The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band for microwave and satellite communications. Internal input and output circuits matched to 50 Ω are designed to provide good flatness of gain and output power in allocated band. To reduce the thermal resistance, the device has a PHS (Plated Heat Sink) structure. NEC’s strigent quality assurance and test procedures guarantee the highest reliability and performance.
PACKAGE DIMENSIONS (unit: mm)
0.5±0.1
2.5MIN.
C1.5 4PLACES SOURCE R1.6 2PLACES
GATE
2.4
12.9±0.2
3.2
6.45±0.05
DRAIN 17.0±0.2 21.0±0.3 10.7
2.5MIN.
SELECTION CHART
NEZ PART NUMBER NEZ3642-4D, 8D, 8DD NEZ4450-4D, 4DD/8D, 8DD NEZ5964-4D, 4DD/8D, 8DD NEZ6472-4D, 4DD/8D, 8DD NEZ7177-4D, 4DD/8D, 8DD NEZ7785-4D, 4DD/8D, 8DD FREQUENCY BAND (GHz) 3.6 to 4.2
+0.1 0.1–0.05
5.0MAX.
0.2MAX.
2.6±0.2
1.6
4.4 to 5.0 5.9 to 6.45 6.4 to 7.2 7.1 to 7.7 7.7 to 8.5
12.0
FEATURES
• Internally matched to 50 Ω • High power output • High linear gain • High reliability • Low distortion
Document No. P10981EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan
©
1996
4W/8W C-BAND POWER-GaAs FET NEZ Series
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
RATINGS NEZ-4D, 4DD Drain to Source Voltage Gate to Source Voltage Gate to Drain Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature VDS VGS VGD ID IG P T* Tch Tstg 15 – 12 – 18 4.5 25 25 175 – 65 to + 175 NEZ-8D, 8DD 15 –12 – 18 9.0 50 50 175 – 65 to + 175 V V V A mA W ˚C ˚C
CHARACTERISTIC
SYMBOL
UNIT
*TC = 25 ˚C
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC Saturated Drain Current SYMBOL IDSS Part No. NEZ-4D NEZ-8D, 8DD Pinch-off Voltage VP NEZ-4D, 4DD NEZ-8D, 8DD Trans-Conductance gm NEZ-4D, 4DD NEZ-8D, 8DD Gate to Drain Voltage BVGD0 NEZ-4D, 4DD NEZ-8D, 8DD Thermal Resistance Rth NEZ-4D, 4DD NEZ-8D, 8DD MIN. 1.0 2.0 – 3.5 – 3.5 — — 20 20 — — TYP. 2.3 4.5 – 2.0 – 2.0 1300 2600 22 22 5.0 2.5 MAX. 3.5 7.0 – 0.5 – 0.5 — — — — 6.0 3.0 ˚C/W V mS V VDS = 2.5 V, IDS = 15 mA VDS = 2.5 V, IDS = 30 mA VDS = 2.5 V, IDS = 1 A VDS = 2.5 V, IDS = 2 A IGD = 15 mA IGD = 30 mA Channel to Case UNIT A TEST CONDITIONS VDS = 2.5 V, VGS = 0 V
2
4W/8W C-BAND Power-GaAs FET NEZ Series
4W PERFORMANCE SPECIFICATIONS (TA = 25 ˚C, Z
P1dB PART NUMBER (dBm)
*1
S
= ZL = 50 Ω)
IM3 (dBc)
*4
GL (dB)
IDS (A)
*2
GL (dB)
*3, 4
η add
(%) VDS
TEST CONDITIONS IDS (RF OFF) (V) 10 10 10 10 10 10 (A) 0.8 0.8 0.8 0.8 0.8 0.8 FREQUENCY IM3 TEST BAND (GHz) 3.6 to 4.2 4.4 to 5.0 5.9 to 6.45 6.4 to 7.2 7.1 to 7.7 7.7 to 8.5 FREQ. (GHz) *5 4.2 5.0 6.45 7.2 7.7 8.5
MIN. TYP. MIN. TYP. TYP. MAX. MAX. TYP. MAX. TYP. NEZ3642-4D 35.5 36.5 36.5 36.5 36.5 36.5 36.5 10.0 9.5 9.0 8.0 7.5 7.0 11.0 10.5 10.0 9.0 8.5 8.0 1.2 1.2 1.2 1.2 1.2 1.2 1.5 1.5 1.5 1.5 1.5 1.5 1.0 1.0 1.0 1.0 1.0 1.0 – 45 – 42 – 45 – 42 – 45 – 42 – 45 – 42 – 45 – 42 – 45 – 42 43 40 37 35 33 33
NEZ4450-4D, 4DD 35.5 NEZ5964-4D, 4DD 35.5 NEZ6472-4D, 4DD 35.5 NEZ7177-4D, 4DD 35.5 NEZ7785-4D, 4DD 35.5
Notes *1 Output power at 1dB gain compression point *2 IDS values are specified at P1dB point. *3 Gain flatness *4 Applies to – 4DD option only *5 IM3 test conditions: f = 10 MHz, 2 tones test, PO = 26dBm (single carrier level)
MAXIMUM OPERATING LIMITS
Rg max. (Ω) 200 VDS max. (V) 10
Rg max is the maximum series resistance between the gate supply and the FET gate.
3
4W/8W C-BAND POWER-GaAs FET NEZ Series
8W PERFORMANCE SPECIFICATIONS (TA = 25 ˚C, Z
P1dB PART NUMBER (dBm)
*1
S
= ZL = 50 Ω)
IM3 (dBc)
*4
GL (dB)
IDS (A)
*2
GL (dB)
*3, 4
η add
(%) VDS
TEST CONDITIONS IDS (RF OFF) (V) 10 10 10 10 10 10 (A) 1.6 1.6 1.6 1.6 1.6 1.6 FREQUENCY IM3 TEST BAND (GHz) 3.6 to 4.2 4.4 to 5.0 5.9 to 6.45 6.4 to 7.2 7.1 to 7.7 7.7 to 8.5 FREQ. (GHz) *5 4.2 5.0 6.45 7.2 7.7 8.5
MIN. TYP. MIN. TYP. TYP. MAX. MAX. TYP. MAX. TYP. NEZ3642-8D, 8DD 38.5 NEZ4450-8D, 8DD 38.5 NEZ5964-8D, 8DD 38.5 NEZ6472-8D, 8DD 38.5 NEZ7177-8D, 8DD 38.5 NEZ7785-8D, 8DD 38.5 39.5 39.5 39.5 39.5 39.5 39.5 10.0 9.5 8.5 7.5 7.0 6.5 11.0 10.5 9.5 8.5 8.0 7.5 2.4 2.4 2.4 2.4 2.4 2.4 3.0 3.0 3.0 3.0 3.0 3.0 1.0 1.0 1.0 1.0 1.0 1.0 – 45 – 42 – 45 – 42 – 45 – 42 – 45 – 42 – 45 – 42 – 45 – 42 40 37 35 32 30 30
Notes *1 Output power at 1dB gain compression point *2 IDS values are specified at P1dB point. *3 Gain flatness *4 Applies to – 8DD option only *5 IM3 test conditions: f = 10 MHz, 2 tones test, PO = 29dBm (single carrier level)
MAXIMUM OPERATING LIMITS
Rg max. (Ω) 100 VDS max. (V) 10
Rg max is the maximum series resistance between the gate supply and the FET gate.
4
4W/8W C-BAND Power-GaAs FET NEZ Series
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
NEZ3642-4D TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 110 100
PT - Power Dissipation - W
Pout (dBm) ID (A) 2 35
OUTPUT POWER vs. INPUT POWER
Test Conditions: Freq = .