Document
PRELIMINARY DATA SHEET
GaAs MES FET
15 W C-BAND POWER GaAs FET NEZ SERIES
15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
DESCRIPTION
The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band for microwave and satellite communications. Internal input and output circuits matched to 50 Ω are designed to provide good flatness of gain and output power in allocated band. To reduce the thermal resistance, the device has a PHS (Plated Heat Sink) structure. NEC’s strigent quality assurance and test procedures guarantee the highest reliability and performance.
PACKAGE DIMENSIONS (unit: mm)
0.5 ±0.1
2.5 MIN.
C1.0 4PLACES R1.2 4PLACES
SOURCE GATE
2.4 5.6
17.4 ±0.2
8.0 ±0.1
DRAIN 20.4 ±0.2
2.5 MIN.
SELECTION CHART
NEZ PART NUMBER NEZ3642-15D, 15DD NEZ4450-15D, 15DD NEZ5964-15D, 15DD NEZ6472-15D, 15DD NEZ7785-15D FREQUENCY BAND (GHz) 3.6 to 4.2 4.4 to 5.0
20.4 ±0.3
16.0
5.0 MAX.
0.1–0.05
2.4 ±0.2
1.6
5.9 to 6.45 6.4 to 7.2 7.7 to 8.5
+0.1
0.2 MAX.
16.0
FEATURES
• Internally matched to 50 Ω • High power output • High linear gain • High reliability • Low distortion
Document No. P10982EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan
©
1996
15 W C-BAND Po GaAs FET NEZ SERIES
NEZ-15D/15DD ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Gate to Drain Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature SYMBOL VDS VGS VGD ID IG PT * Tch Tstg RATINGS 15 –12 –18 18 100 100 175 –65 to +175 UNIT V V V A mA W ˚C ˚C
* TC = 25 ˚C ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC Saturated Drain Current SYMBOL IDSS Part No. NEZ-15D NEZ-15DD NEZ-15D NEZ-15DD NEZ-15D NEZ-15DD NEZ-15D NEZ-15DD NEZ-15D NEZ15DD MIN. 4.0 TYP. 9.2 MAX. 14.0 UNIT A TEST CONDITIONS VDS = 2.5 V, VGS = 0 V
Pinch-off Voltage
VP
–3.5
–2.2
–0.5
V
VDS = 2.5 V, IDS = 60 mA
Trans-Conductance
gm
–
5200
–
mS
VDS = 2.5 V, IDS = 4 A
Gate to Drain Voltage
BVGDO
20
22
–
V
IGD = 60 mA
Thermal Resistance
Rth
–
1.3
1.5
˚C/W
Channel to Case
2
15 W C-BAND Po GaAs FET NEZ SERIES
15W PERFORMANCE SPECIFICATIONS (TA = 25 ˚C, Zs = ZL = 50 Ω)
∆ GL (dB) *3,4
p1dB PART NUMBER (dBm) *1
GL (dB)
IDS (A) *2
IM3 (dBc) *4
ηadd
(%) VDS (V) 10 10 10 10 10 10 10 10 10 IDS *5 (A) 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0
TEST CONDITIONS FREQUENCY BAND (GHz) 3.6 to 4.2 3.6 to 4.2 4.4 to 5.0 4.4 to 5.0 5.9 to 6.45 5.9 to 6.45 6.4 to 7.2 6.4 to 7.2 7.7 to 8.5 IM3 TEST FREQ. (GHz)*6 – 4.2 – 5.0 – 6.45 – 7.2 –
MIN. TYP. MIN. TYP. TYP. MAX. MAX. TYP. MAX. TYP. NEZ3642-15D 41.5 42.5 42.5 42.5 42.5 42.5 42.5 42.5 42.5 42.5 9.0 9.0 9.0 9.0 8.0 8.0 6.5 6.5 6.0 10.0 10.0 10.0 10.0 9.0 9.0 7.5 7.5 7.0 4.8 4.8 4.8 4.8 4.8 4.8 4.8 4.8 4.8 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 – 1.0 – 1.0 – 1.0 – 1.0 – – – – – – – – – – – –42 – –42 – –42 – –42 – 35 35 35 35 33 33 31 31 27
NEZ3642-15DD 41.5 NEZ4450-15D 41.5
NEZ4450-15DD 41.5 NEZ5964-15D 41.5
NEZ5964-15DD 41.5 NEZ6472-15D 41.5
NEZ6472-15DD 41.5 NEZ7785-15D 41.5
Notes *1 Output power at 1 dB gain compression point *2 IDS values are specified at P1dB point. *3 Gain flatness *4 Applies to –15DD option only *5 RF OFF *6 IM3 test conditions: ∆ f = 10 MHz, 2 tones test, PO = 31.5 dBm (single carrier level) MAXIMUM OPERATING LIMITS
Rg max. (Ω) 50 VDS max. (V) 10
Rg max is the maximum series resistance between the gate supply and the FET gate.
3
15 W C-BAND Po GaAs FET NEZ SERIES
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
NEZ3642-15D/15DD TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 110 100
PT - Power Dissipation - W
90 80 70 60 50 40 30 20 10 0 0 25
Infinite Heat sink
ID (A) 6
Pout (dBm) 45
OUTPUT POWER vs. INPUT POWER Pout
–15D/–15DD 5
40
Test Conditions: Freq = 3.9 (GHz), VDS = 10.0 (V), IDS = 4.0 (A) Pout: Pin = 35.0 (dBm), GL: Pin = 24.0 (dBm), Rg = 50 (Ω)
ID 35 EFF (%) 50 40 30 20 10 0
4 30 3
EFF
50 75 100 125 150 175 200 TC - Case Temperature - ˚C
20
25 30 Pin - Input Power - dBm
35
NEZ4450-15D/15DD Pout (dBm) 45 OUTPUT POWER vs. INPUT POWER Pout
NEZ5964-15D/15DD Pout (dBm) 45 OUTPUT POWER vs. INPUT POWER
Test Conditions: Freq = 6.2 (GHz), VDS = 10.0 (V), ID = 4.0 (A) Rg = 50 (Ω)
ID (A) 6
40 5 35 4
Test Conditions: Freq = 4.7 (GHz), VDS = 10.0 (V), IDS = 4.0 (A) Pout: Pin = 37.0 (dBm), GL: Pin = 26.0 (dBm), Rg = 50 (Ω)
ID (A) 5
Pout
40 ID ID 4 35 EFF (%) 50 40 30 20 10 0 3 30 2 EFF (%) 50 40 30 20 10 0
EFF 30 3
EFF
20
25 30 35 Pin - Input Power - dBm
25
30 35 Pin - Input Power - dBm
40
4
15 W C-BAND Po GaAs FET NEZ SERIES
NEZ6472-15D/15DD Pout (dBm) 45 OUTPUT POWER vs. INPUT POWER Pout NEZ7785-15D/15DD Pout (dBm) ID (A) 6 40 OUTPUT POWER vs. INPUT POWER
Test Conditions: Freq = 8.1 (GHz), VDS = 10.0 (V), IDS = 4.0 (A) Pout: Pin = 38.5 (dBm) GL: Pin = 26.0 (dBm) Rg = 50 (Ω)
ID (A) 5
Test Conditions: Freq = 6.8 (GHz), VDS = 10.0 (V), ID = 4.0 (A) Rg = 50 (Ω)
Pout
40 4 35 3 30 2 EFF (%) 50 40 30 20 10 0.