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NEZ7785-15D Dataheets PDF



Part Number NEZ7785-15D
Manufacturers NEC
Logo NEC
Description 15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
Datasheet NEZ7785-15D DatasheetNEZ7785-15D Datasheet (PDF)

PRELIMINARY DATA SHEET GaAs MES FET 15 W C-BAND POWER GaAs FET NEZ SERIES 15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band for microwave and satellite communications. Internal input and output circuits matched to 50 Ω are designed to provide good flatness of gain and output power in allocated band. To reduce the thermal resistance, the device has a PHS (Plated Heat Sink) s.

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PRELIMINARY DATA SHEET GaAs MES FET 15 W C-BAND POWER GaAs FET NEZ SERIES 15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band for microwave and satellite communications. Internal input and output circuits matched to 50 Ω are designed to provide good flatness of gain and output power in allocated band. To reduce the thermal resistance, the device has a PHS (Plated Heat Sink) structure. NEC’s strigent quality assurance and test procedures guarantee the highest reliability and performance. PACKAGE DIMENSIONS (unit: mm) 0.5 ±0.1 2.5 MIN. C1.0 4PLACES R1.2 4PLACES SOURCE GATE 2.4 5.6 17.4 ±0.2 8.0 ±0.1 DRAIN 20.4 ±0.2 2.5 MIN. SELECTION CHART NEZ PART NUMBER NEZ3642-15D, 15DD NEZ4450-15D, 15DD NEZ5964-15D, 15DD NEZ6472-15D, 15DD NEZ7785-15D FREQUENCY BAND (GHz) 3.6 to 4.2 4.4 to 5.0 20.4 ±0.3 16.0 5.0 MAX. 0.1–0.05 2.4 ±0.2 1.6 5.9 to 6.45 6.4 to 7.2 7.7 to 8.5 +0.1 0.2 MAX. 16.0 FEATURES • Internally matched to 50 Ω • High power output • High linear gain • High reliability • Low distortion Document No. P10982EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan © 1996 15 W C-BAND Po GaAs FET NEZ SERIES NEZ-15D/15DD ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Gate to Drain Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature SYMBOL VDS VGS VGD ID IG PT * Tch Tstg RATINGS 15 –12 –18 18 100 100 175 –65 to +175 UNIT V V V A mA W ˚C ˚C * TC = 25 ˚C ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Saturated Drain Current SYMBOL IDSS Part No. NEZ-15D NEZ-15DD NEZ-15D NEZ-15DD NEZ-15D NEZ-15DD NEZ-15D NEZ-15DD NEZ-15D NEZ15DD MIN. 4.0 TYP. 9.2 MAX. 14.0 UNIT A TEST CONDITIONS VDS = 2.5 V, VGS = 0 V Pinch-off Voltage VP –3.5 –2.2 –0.5 V VDS = 2.5 V, IDS = 60 mA Trans-Conductance gm – 5200 – mS VDS = 2.5 V, IDS = 4 A Gate to Drain Voltage BVGDO 20 22 – V IGD = 60 mA Thermal Resistance Rth – 1.3 1.5 ˚C/W Channel to Case 2 15 W C-BAND Po GaAs FET NEZ SERIES 15W PERFORMANCE SPECIFICATIONS (TA = 25 ˚C, Zs = ZL = 50 Ω) ∆ GL (dB) *3,4 p1dB PART NUMBER (dBm) *1 GL (dB) IDS (A) *2 IM3 (dBc) *4 ηadd (%) VDS (V) 10 10 10 10 10 10 10 10 10 IDS *5 (A) 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 TEST CONDITIONS FREQUENCY BAND (GHz) 3.6 to 4.2 3.6 to 4.2 4.4 to 5.0 4.4 to 5.0 5.9 to 6.45 5.9 to 6.45 6.4 to 7.2 6.4 to 7.2 7.7 to 8.5 IM3 TEST FREQ. (GHz)*6 – 4.2 – 5.0 – 6.45 – 7.2 – MIN. TYP. MIN. TYP. TYP. MAX. MAX. TYP. MAX. TYP. NEZ3642-15D 41.5 42.5 42.5 42.5 42.5 42.5 42.5 42.5 42.5 42.5 9.0 9.0 9.0 9.0 8.0 8.0 6.5 6.5 6.0 10.0 10.0 10.0 10.0 9.0 9.0 7.5 7.5 7.0 4.8 4.8 4.8 4.8 4.8 4.8 4.8 4.8 4.8 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 – 1.0 – 1.0 – 1.0 – 1.0 – – – – – – – – – – – –42 – –42 – –42 – –42 – 35 35 35 35 33 33 31 31 27 NEZ3642-15DD 41.5 NEZ4450-15D 41.5 NEZ4450-15DD 41.5 NEZ5964-15D 41.5 NEZ5964-15DD 41.5 NEZ6472-15D 41.5 NEZ6472-15DD 41.5 NEZ7785-15D 41.5 Notes *1 Output power at 1 dB gain compression point *2 IDS values are specified at P1dB point. *3 Gain flatness *4 Applies to –15DD option only *5 RF OFF *6 IM3 test conditions: ∆ f = 10 MHz, 2 tones test, PO = 31.5 dBm (single carrier level) MAXIMUM OPERATING LIMITS Rg max. (Ω) 50 VDS max. (V) 10 Rg max is the maximum series resistance between the gate supply and the FET gate. 3 15 W C-BAND Po GaAs FET NEZ SERIES TYPICAL CHARACTERISTICS (TA = 25 ˚C) NEZ3642-15D/15DD TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 110 100 PT - Power Dissipation - W 90 80 70 60 50 40 30 20 10 0 0 25 Infinite Heat sink ID (A) 6 Pout (dBm) 45 OUTPUT POWER vs. INPUT POWER Pout –15D/–15DD 5 40 Test Conditions: Freq = 3.9 (GHz), VDS = 10.0 (V), IDS = 4.0 (A) Pout: Pin = 35.0 (dBm), GL: Pin = 24.0 (dBm), Rg = 50 (Ω) ID 35 EFF (%) 50 40 30 20 10 0 4 30 3 EFF 50 75 100 125 150 175 200 TC - Case Temperature - ˚C 20 25 30 Pin - Input Power - dBm 35 NEZ4450-15D/15DD Pout (dBm) 45 OUTPUT POWER vs. INPUT POWER Pout NEZ5964-15D/15DD Pout (dBm) 45 OUTPUT POWER vs. INPUT POWER Test Conditions: Freq = 6.2 (GHz), VDS = 10.0 (V), ID = 4.0 (A) Rg = 50 (Ω) ID (A) 6 40 5 35 4 Test Conditions: Freq = 4.7 (GHz), VDS = 10.0 (V), IDS = 4.0 (A) Pout: Pin = 37.0 (dBm), GL: Pin = 26.0 (dBm), Rg = 50 (Ω) ID (A) 5 Pout 40 ID ID 4 35 EFF (%) 50 40 30 20 10 0 3 30 2 EFF (%) 50 40 30 20 10 0 EFF 30 3 EFF 20 25 30 35 Pin - Input Power - dBm 25 30 35 Pin - Input Power - dBm 40 4 15 W C-BAND Po GaAs FET NEZ SERIES NEZ6472-15D/15DD Pout (dBm) 45 OUTPUT POWER vs. INPUT POWER Pout NEZ7785-15D/15DD Pout (dBm) ID (A) 6 40 OUTPUT POWER vs. INPUT POWER Test Conditions: Freq = 8.1 (GHz), VDS = 10.0 (V), IDS = 4.0 (A) Pout: Pin = 38.5 (dBm) GL: Pin = 26.0 (dBm) Rg = 50 (Ω) ID (A) 5 Test Conditions: Freq = 6.8 (GHz), VDS = 10.0 (V), ID = 4.0 (A) Rg = 50 (Ω) Pout 40 4 35 3 30 2 EFF (%) 50 40 30 20 10 0.


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