NGD8201NT4

NGD8201N Ignition IGBT 20 A, 400 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features http://onsemi.com Ideal for Coil−on−Plug and Driver−on−Coil Applications DPAK Package Offers Smaller Footprint for Increased Board Space Gate−Emitter ESD Protection Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load Integrated ESD Diode Protection Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor (RG) and Gate−Emitter Resistor (RGE) 20 Amps 400 Volts VCE(on) = 1.3 V @ IC = 10 A, VGE . 4.5 V C G RG RGE Applications E Ignition Systems 4 MARKING DIAGRAM YWW NGD 8201N NGD8201N= Device Code Y = Year WW = Work Week MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector−Emitter Voltage Collector−Gate Voltage Gate−Emitter Voltage Collector Current−Continuous @ TC = 25°C − Pulsed Continuous Gate Current Transient Gate Current (t ≤ 2 ms, f ≤ 100 Hz) ESD (Charged−Device Model) ESD (Human Body Model) R = 1500 W, C = 100 pF ESD (Machine Model) R = 0 W, C = 200 pF Total Power Dissipation @ TC = 25°C Derate above 25°C Operating & Storage Temperatu...