Self-Protected FET
NIF5002N
Preferred Device
Self−Protected FET with Temperature and Current Limit
42 V, 2.0 A, Single N−Channel, SOT−223
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Description
NIF5002N
Preferred Device
Self−Protected FET with Temperature and Current Limit
42 V, 2.0 A, Single N−Channel, SOT−223
HDPlus™ devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain−to−Gate Clamp that enables them to withstand high energy in the avalanche mode. The Clamp also provides additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate−to−Source Clamp. Current Limitation Thermal Shutdown with Automatic Restart Short Circuit Protection IDSS Specified at Elevated Temperature Avalanche Energy Specified Slew Rate Control for Low Noise Switching Overvoltage Clamped Protection
http://onsemi.com
V(BR)DSS (Clamped) 42 V
RDS(ON) TYP 165 mW @ 10 V
ID MAX 2.0 A*
*Max current limit value is dependent on input condition. Drain Overvoltage Protection MPWR
Features
Gate Input
RG
ESD Protection Temperature Limit Current Limit Current Sense
Applications
Lighting Solenoids Small Motors
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Drain−to−Source Voltage Internally Clamped Drain−to−Gate Voltage Internally Clamped (RG = 1.0 MW) Gate−to−Source Voltage Continuous Drain Current Power Dissip...
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