Read/Write Memory. MM54C89 Datasheet

MM54C89 Memory. Datasheet pdf. Equivalent

Part MM54C89
Description 64-Bit TRI-STATE Random Access Read/Write Memory
Feature MM54C89 MM74C89 64-Bit TRI-STATE Random Access Read Write Memory March 1988 MM54C89 MM74C89 64-Bit.
Manufacture National
Datasheet
Download MM54C89 Datasheet



MM54C89
March 1988
MM54C89 MM74C89 64-Bit TRI-STATE
Random Access Read Write Memory
General Description
The MM54C89 MM74C89 is a 16-word by 4-bit random ac-
cess read write memory Inputs to the memory consist of
four address lines four data input lines a write enable line
and a memory enable line The four binary address inputs
are decoded internally to select each of the 16 possible
word locations An internal address register latches the ad-
dress information on the positive to negative transition of
the memory enable input The four TRI-STATE data output
lines working in conjunction with the memory enable input
provide for easy memory expansion
Address Operation Address inputs must be stable tSA pri-
or to the positive to negative transition of memory enable It
is thus not necessary to hold address information stable for
more than tHA after the memory is enabled (positive to neg-
ative transition of memory enable)
Note The timing is different than the DM7489 in that a positive to negative
transition of the memory enable must occur for the memory to be
selected
Write Operation Information present at the data inputs is
written into the memory at the selected address by bringing
write enable and memory enable low
Read Operation The complement of the information which
was written into the memory is non-destructively read out at
the four outputs This is accomplished by selecting the de-
sired address and bringing memory enable low and write
enable high
When the device is writing or disabled the output assumes a
TRI-STATE (Hi-z) condition
Features
Y Wide supply voltage range
3 0V to 15V
Y Guaranteed noise margin
1 0V
Y High noise immunity
Y Low power
0 45 VCC (typ )
fan out of 2
TTL compatibility
driving 74L
Y Low power consumption
100 nW package (typ )
Y Fast access time
Y TRI-STATE output
130 ns (typ ) at VCC e 10V
Logic and Connection Diagrams
Dual-In-Line Package
TRI-STATE is a registered trademark of National Semiconductor Corporation
C1995 National Semiconductor Corporation TL F 5888
Top View TL F 5888–2
Order Number MM54C89
or MM74C89
TL F 5888 – 1
RRD-B30M105 Printed in U S A



MM54C89
Absolute Maximum Ratings (Note 1)
If Military Aerospace specified devices are required
please contact the National Semiconductor Sales
Office Distributors for availability and specifications
Voltage at any Pin
Operating Temperature Range
MM54C89
MM74C89
b0 3V to VCC a0 3V
b55 C to a125 C
b40 C to a85 C
Storage Temperature Range (TS)
b65 C to a150 C
Power Dissipation (PD)
Dual-In-Line
Small Outline
Operating VCC Range
Absolute Maximum VCC
Lead Temperature (TL)
(Soldering 10 seconds)
700 mW
500 mW
3 0V to 15V
18V
260 C
DC Electrical Characteristics Min Max limits apply across temperature range unless otherwise noted
Symbol
Parameter
Conditions
Min Typ Max Units
CMOS TO CMOS
VIN(1)
Logical ‘‘1’’ Input Voltage
VIN(0)
Logical ‘‘0’’ Input Voltage
VOUT(1)
Logical ‘‘1’’ Output Voltage
VOUT(0)
Logical ‘‘0’’ Output Voltage
IIN(1)
IIN(0)
IOZ
Logical ‘‘1’’ Input Current
Logical ‘‘0’’ Input Current
Output Current in High
Impedance State
ICC Supply Current
CMOS LPTTL INTERFACE
VCC e 5 0V
VCC e 10V
VCC e 5 0V
VCC e 10V
VCC e 5 0V IO e b10 mA
VCC e 10V IO e b10 mA
VCC e 5 0V IO e a10 mA
VCC e 10V IO e a10 mA
VCC e 15V VIN e 15V
VCC e 15V VIN e 0V
VCC e 15V V e 15V
VCC e 15V VO e 0V
VCC e 15V
35
80
45
90
b1 0
b1 0
15
20
b0 005
b0 005
0 005
b0 005
0 05
05
10
10
10
300
V
V
V
V
V
V
V
V
mA
mA
mA
mA
mA
VIN(1)
Logical ‘‘1’’ Input Voltage
54C VCC e 4 5V
74C VCC e 4 75V
VCC b 1 5
VCC b 1 5
VIN(0)
Logical ‘‘0’’ Input Voltage
54C VCC e 4 5V
74C VCC e 4 75V
VOUT(1)
Logical ‘‘1’’ Output Voltage
54C VCC e 4 5V IO e b360 mA
74C VCC e 4 75V IO e b360 mA
24
24
VOUT(0)
Logical ‘‘0’’ Output Voltage
54C VCC e 4 5V IO e a360 mA
74C VCC e 4 75V IO e a360 mA
OUTPUT DRIVE (See 54C 74C Family Characteristics Data Sheet) (Short Circuit Current)
V
V
08 V
08 V
V
V
04 V
04 V
ISOURCE
Output Source Current
(P-Channel)
VCC e 5 0V VOUT e 0V
TA e 25 C
b1 75
b3 3
mA
ISOURCE
Output Source Current
(P-Channel)
VCC e 10V VOUT e 0V
TA e 25 C
b8 0
b15
mA
ISINK
Output Sink Current
(N-Channel)
VCC e 5 0V VOUT e VCC
TA e 25 C
1 75 3 6
mA
ISINK
Output Sink Current
(N-Channel)
VCC e 10V VOUT e VCC
TA e 25 C
8 0 16
mA
Note 1 ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed Except for ‘‘Operating Range’’ they are not
meant to imply that the devices should be operated at these limits The table of ‘‘Electrical Characteristics’’ provides conditions for actual device operation
AC Electrical Characteristics
Symbol
tpd
Parameter
Propagation Delay from
Memory Enable
tACC
Access Time from
Address Input
tSA Address Setup Time
tHA Address Hold Time
tME Memory Enable Pulse Width
TA e 25 C CL e 50 pF unless otherwise noted
Conditions Min Typ
VCC e 5V
VCC e 10V
270
100
VCC e 5V
VCC e 10V
350
130
VCC e 5V
VCC e 10V
150
60
VCC e 5V
VCC e 10V
60
40
VCC e 5V
400 250
VCC e 10V
150
90
Max
500
220
650
280
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
2





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