MMAD1103 Diode Array Datasheet

MMAD1103 Datasheet, PDF, Equivalent


Part Number

MMAD1103

Description

Switching Diode Array

Manufacture

Microsemi Corporation

Total Page 3 Pages
Datasheet
Download MMAD1103 Datasheet


MMAD1103
MMAD1103(e3)
Available
Switching Diode Array
Steering Diode TVS ArrayTM
DESCRIPTION
These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a
planar process and mounted in a 14-Pin SOIC package for use as steering diodes protecting
up to eight I/O ports from ESD, EFT, or surge by directing them either to the positive side of
the power supply line or to ground (see Figure 1). An external TVS diode may be added
between the positive supply line and ground to prevent overvoltage on the supply rail. They
may also be used in fast switching core-driver applications. This includes computers and
peripheral equipment such as magnetic cores, thin-film memories, plated-wire memories, etc.,
as well as decoding or encoding applications. These arrays offer many advantages of
integrated circuits such as high-density packaging and improved reliability. This is a result of
fewer pick and place operations, smaller footprint, smaller weight, and elimination of various
discrete packages that may not be as user friendly in PC board mounting. They are available
with either tin-lead plating terminations or as RoHS compliant with annealed matte-tin finish.
14-Pin Package
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
16-diode array protects 8 lines
Molded 14-Pin SOIC package
UL 94V-0 flammability classification
Low capacitance
Switching speeds less than 5 ns
IEC 61000-4 compatible:
61000-4-2 (ESD): Air 15 kV, contact – 8 kV
61000-4-4 (EFT): 40 A – 5/50 ns
61000-4-5 (surge): 12 A, 8/20 µs
RoHS compliant device is available
Top Viewing Pin Layout
APPLICATIONS / BENEFITS
Protection from switching transients and induced RF
Low capacitance steering diode protection for high frequency data lines
Ideal for:
RS-232 & RS-422 Interface Networks.
Ethernet: 10 Base T
Computer I / O Ports
LAN
Switching Core Drivers
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
RF01063, Rev B (2/17/14)
©2013 Microsemi Corporation
One Enterprise, Aliso Viejo, CA 92656 Ph: 949-380-6100 sales.support@microsemi.com
Page 1 of 3

MMAD1103
MMAD1103(e3)
MAXIMUM RATINGS
Parameters/Test Conditions
Junction and Storage Temperature
Peak Working Reverse Voltage
Repetitive Peak Forward Current (one diode)
Forward Surge Current
@ 8.3 ms
@ 8/20 µs
Rated Average Power Dissipation (total package)
Solder Temperature @ 10 s
Symbol
TJ and TSTG
VRWM
IFRM
IFSM
PM(AV)
Value
-55 to +150
75
400
2
12
1500
260
Unit
ºC/W
V
mA
A
mW
ºC
MECHANICAL and PACKAGING
CASE: Void-free transfer molded thermosetting epoxy body meeting UL94V-0 flammability classification.
TERMINALS: Tin-lead or RoHS compliant annealed matte-tin plating solderable per MIL-STD-750 method 2026.
MARKING: MSC logo, MMAD1103 or MMAD1103e3 and date code. Pin #1 is to the left of the dot or indent on top of package.
DELIVERY option: Tape and reel or carrier tube. Consult factory for quantities.
WEIGHT: Approximately 0.127 grams
See Package Dimensions on last page.
Surface Mount Package
Series Number
PART NOMENCLATURE
MMAD
1103 (e3)
RoHS Compliance
e3 = RoHS compliant
Blank = non-RoHS compliant
Symbol
CT
IR
V(BR)
VF
VRWM
SYMBOLS & DEFINITIONS
Definition
Total Capacitance: The total small signal capacitance between the diode terminals of a complete device.
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature.
Breakdown Voltage: The voltage across the device at a specified current I(BR) in the breakdown region.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range.
ELECTRICAL CHARACTERISTICS @ 25 ºC unless otherwise stated
PART
NUMBER
BREAKDOWN
VOLTAGE
V(BR)
@ IBR =100 µA
V
LEAKAGE
CURRENT
IR
TA = 25 °C
µA
LEAKAGE
CURRENT
IR
TA = 150 °C
µA
TOTAL
CAPACITANCE
CT
@0V
REVERSE
RECOVERY
TIME
trr
FORWARD
VOLTAGE
VF
IF = 10 mA
pF ns V
FORWARD
VOLTAGE
VF
IF = 100 mA
V
MIN
MAX @VR MAX @VR TYP (Note 1)
MAX
MAX
MAX
MMAD1103
MMAD1103e3
90
0.200 20 300 20
1.5
5.0 1.00 1.20
NOTE 1: Individual diode capacitance is less than 1.5 pF but will read higher between pins with the connected parallel diode array shown.
RF01063, Rev B (2/17/14)
©2013 Microsemi Corporation
One Enterprise, Aliso Viejo, CA 92656 Ph: 949-380-6100 sales.support@microsemi.com
Page 2 of 3


Features MMAD1103(e3) Available Switching Diode Array Steering Diode TVS ArrayTM DESC RIPTION These low capacitance diode arr ays are multiple, discrete, isolated ju nctions fabricated by a planar process and mounted in a 14-Pin SOIC package fo r use as steering diodes protecting up to eight I/O ports from ESD, EFT, or su rge by directing them either to the pos itive side of the power supply line or to ground (see Figure 1). An external T VS diode may be added between the posit ive supply line and ground to prevent o vervoltage on the supply rail. They may also be used in fast switching core-dr iver applications. This includes comput ers and peripheral equipment such as ma gnetic cores, thin-film memories, plate d-wire memories, etc., as well as decod ing or encoding applications. These arr ays offer many advantages of integrated circuits such as high-density packagin g and improved reliability. This is a r esult of fewer pick and place operation s, smaller footprint, smaller weight, and elimination of variou.
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