MMAD1108 Diode Array Datasheet

MMAD1108 Datasheet, PDF, Equivalent


Part Number

MMAD1108

Description

Switching Diode Array

Manufacture

Microsemi Corporation

Total Page 2 Pages
Datasheet
Download MMAD1108 Datasheet


MMAD1108
SCOTTSDALE DIVISION
MMAD1108
Switching Diode Array
Steering Diode TVS ArrayTM
PRODUCT PREVIEW
DESCRIPTION
These low capacitance diode arrays are multiple, discrete, isolated junctions
fabricated by a planar process and mounted in an SOIC package for use in
fast switching core-driver applications. This includes computers and
peripheral equipment such as magnetic cores, thin-film memories, plated-
wire memories, etc., as well as decoding or encoding applications. They
may also be used as steering diodes for protecting up to four I/O ports from
ESD, EFT, or surge by directing them either to the positive side of the power
supply line or to ground (see figure 1). An external TVS diode may be added
between the positive supply line and ground to prevent overvoltage on the
supply rail. These arrays offer many advantages of integrated circuits such
as high-density packaging and improved reliability. This is a result of fewer
pick and place operations, smaller footprint, smaller weight, and elimination
of various discrete SM packages that may not be as user friendly in PC
board mounting.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
SWITCHING AND
STEERING ARRAY
FEATURES
8 Diode Array
SOIC 16-pin Surface Mount Package
UL 94V-0 Flamability Classification
Low Capacitance 1.5 pF per diode
Switching speeds less than 5 ns
IEC 61000-4 compatible
61000-4-2 (ESD): Air 15kV, contact – 8 kV
61000-4-4 (EFT): 40A – 5/50 ns
61000-4-5 (surge): 12A, 8/20 µs
PACKAGING
Tape & Reel per EIA Standard 481
13 inch reel; 2,500 pieces (OPTIONAL)
Carrier tubes; 48 pcs (STANDARD)
MAXIMUM RATINGS
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Forward Surge Current: 2 Amps (8.3 ms)
12 Amps (8/20 µs)
Continuous Forward Current: 400 mA (one diode)
Power Dissipation (PD): 1500 mW (total)
MECHANICAL
Molded SO-16 Surface Mount
Weight 0.128 grams (approximate)
Marking: Logo, device number, date code
Pin #1 defined by dot on top of package
ELECTRICAL CHARACTERISTICS PER LINE @ 25°C Unless otherwise specified
PART
NUMBER
BREAKDOWN
VOLTAGE
VBR
@ IBR =100µA
V
WORKING
PEAK
REVERSE
VOLTAGE
VRW M
V
LEAKAGE
CURRENT
IR
TA = 25°C
µA
LEAKAGE
CURRENT
IR
TA = 150°C
µA
CAPACITANCE
C
@0V
pF
REVERSE
RECOVERY
TIME
trr
ns
FORWARD
VOLTAGE
VF
IF = 10 mA
V
MMAD1108
MIN
90
MAX
75
MAX
.200
@VR
20
MAX
300
@VR
20
TYP
1.5
MAX
5.0
MAX
1.00
FORWARD
VOLTAGE
VF
IF = 100 mA
V
MAX
1.20
Copyright 2001
MSC0900.PDF 02-06 2002 REV J
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1

MMAD1108
SCOTTSDALE DIVISION
MMAD1108
Switching Diode Array
Steering Diode TVS ArrayTM
PRODUCT PREVIEW
SYMBOLS & DEFINITIONS
Symbol
DEFINITION
VBR Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
VRWM
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
VF Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
IR
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature.
C Capacitance: The capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in
picofarads.
CIRCUIT DIAGRAM
PIN CONFIGURATION
Supply rail (+VCC)
1 2 34 5 6 78
I/O Port
GND (or -VCC)
figure 1
A
16 15 14 13 12 11 10 9
OUTLINE AND SCHEMATIC
figure 2
BP
G
DL
CJ
KF
INCHES
DIM MIN MAX
A
0.358
0.398
B
0.150
0.158
C
0.053
0.069
D
0.011
0.021
F
0.016
0.050
G 0.050 BSC
J
0.006
0.010
K
0.004
0.008
L
0.189
0.206
P
0.228
0.244
MILLIMETERS
MIN MAX
9.09 10.10
3.81 4.01
1.35 1.75
0.28 0.53
0.41 1.27
1.27 BSC
0.15 0.25
0.10 0.20
4.80 5.23
5.79 6.19
PAD LAYOUT
OUTLINE
SCHEMATIC
Copyright 2001
MSC0900.PDF 02-06 2002 REV J
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2


Features WWW.Microsemi .COM SCOTTSDALE DIVISION MMAD1108 Switching Diode Array Steerin g Diode TVS ArrayTM PRODUCT PREVIEW DE SCRIPTION These low capacitance diode a rrays are multiple, discrete, isolated junctions fabricated by a planar proces s and mounted in an SOIC package for us e in fast switching core-driver applica tions. This includes computers and peri pheral equipment such as magnetic cores , thin-film memories, platedwire memori es, etc., as well as decoding or encodi ng applications. They may also be used as steering diodes for protecting up to four I/O ports from ESD, EFT, or surge by directing them either to the positi ve side of the power supply line or to ground (see figure 1). An external TVS diode may be added between the positive supply line and ground to prevent over voltage on the supply rail. These array s offer many advantages of integrated c ircuits such as high-density packaging and improved reliability. This is a res ult of fewer pick and place operations, smaller footprint, smal.
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