Diode Array. MMAD1109 Datasheet


MMAD1109 Array. Datasheet pdf. Equivalent


MMAD1109


Switching Diode Array
SCOTTSDALE DIVISION

MMAD1109 and MMAD1109e3
Switching Diode Array Steering Diode TVS Array™

WWW.Microsemi .COM

DESCRIPTION

APPEARANCE

These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-PIN package for use as steering diodes protecting up to seven I/O ports from ESD, EFT, or surge by directing them either to the positive side of the power supply line or to ground (see figure 1). An external TVS diode may be added between the positive supply line and ground to prevent overvoltage on the supply rail. They may also be used in fast switching core-driver applications. This includes computers and peripheral equipment such as magnetic cores, thin-film memories, plated-wire memories, etc., as well as decoding or encoding applications. These arrays offer many advantages of integrated circuits such as high-density packaging and improved reliability. This is a result of fewer pick and place operations, smaller foo...



MMAD1109
SCOTTSDALE DIVISION
MMAD1109 and MMAD1109e3
Switching Diode Array
Steering Diode TVS Array™
DESCRIPTION
APPEARANCE
These low capacitance diode arrays are multiple, discrete, isolated
junctions fabricated by a planar process and mounted in a 14-PIN package
for use as steering diodes protecting up to seven I/O ports from ESD, EFT,
or surge by directing them either to the positive side of the power supply
line or to ground (see figure 1). An external TVS diode may be added
between the positive supply line and ground to prevent overvoltage on the
supply rail. They may also be used in fast switching core-driver
applications. This includes computers and peripheral equipment such as
magnetic cores, thin-film memories, plated-wire memories, etc., as well as
decoding or encoding applications. These arrays offer many advantages of
integrated circuits such as high-density packaging and improved reliability.
This is a result of fewer pick and place operations, smaller footprint, smaller
weight, and elimination of various discrete packages that may not be as
user friendly in PC board mounting. They are available with either Tin-Lead
plating terminations or as RoHS Compliant with annealed matte-Tin finish
by adding an “e3” suffix to the part number.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
Top Viewing Pin Layout
FEATURES
APPLICATIONS / BENEFITS
7 Diode Array / protects 7 lines
Molded 14-Pin SOIC Package
UL 94V-0 Flammability Classification
Low Capacitance 1.5 pF per diode
Switching speeds less than 5 ns
RoHS Compliant devices available by adding “e3” suffix
IEC 61000-4 compatible
61000-4-2 (ESD): Air 15kV, contact – 8 kV
61000-4-4 (EFT): 40A – 5/50 ns
61000-4-5 (surge): 12A, 8/20 µs
Low capacitance steering diode protection for high
frequency data lines
RS-232 & RS-422 Interface Networks
Ethernet: 10 Base T
Computer I / O Ports
LAN
Switching Core Drivers
MAXIMUM RATINGS
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Forward Surge Current: 2 Amps (8.3 ms)
12 Amps (8/20 µs)
Continuous Forward Current: 400 mA (one diode)
Power Dissipation (PD): 1500 mW (total)
Solder Temperature: 260°C for 10 s (maximum)
MECHANICAL AND PACKAGING
CASE: Void-free transfer molded thermosetting
epoxy body meeting UL94V-0 flammability
classification
TERMINALS: Tin-Lead or RoHS Compliant
annealed matte-Tin plating solderable per MIL-STD-
750 method 2026
MARKING: MSC logo, MMAD1107 or MMAD1107e3
and date code. Pin #1 is to the left of the dot or
indent on top of package
WEIGHT: 0.127 grams (approximate)
Tape & Reel packaging: 2500 pcs (STANDARD)
Carrier tube packaging: 55 pcs
ELECTRICAL CHARACTERISTICS PER LINE @ 25°C Unless otherwise specified
PART
NUMBER
BREAKDOWN
VOLTAGE
VBR
@ IBR =100µA
V
WORKING
PEAK
REVERSE
VOLTAGE
VRWM
V
LEAKAGE
CURRENT
IR
TA = 25°C
µA
LEAKAGE
CURRENT
IR
TA = 150°C
µA
CAPACITANCE
C
@0V
pF
REVERSE
RECOVERY
TIME
trr
ns
FORWARD
VOLTAGE
VF
IF = 10 mA
V
FORWARD
VOLTAGE
VF
IF = 100 mA
V
MMAD1109
MMAD1109e3
MIN
90
MAX
75
MAX
0.200
@VR
20
MAX
300
@VR
20
TYP
1.5
MAX
5.0
MAX
1.00
MAX
1.20
Copyright © 2005
6-28-2005 REV K
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1

MMAD1109
SCOTTSDALE DIVISION
MMAD1109 and MMAD1109e3
Switching Diode Array
Steering Diode TVS Array™
Symbol
VBR
VRWM
VF
IR
C
SYMBOLS & DEFINITIONS
Definition
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature.
Capacitance: The capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in
picofarads.
OUTLINE AND CIRCUIT
Supply rail (+VCC)
I/O Port
DIM
A
B
C
D
E
F
G
H
I
J
INCHES
MIN
MAX
0.740
0.780
0.235
0.265
0.120
0.140
0.270
0.330
0.320
0.380
0.100 BSC
0.015
0.021
0.017
0.023
0.140
0.160
0.040
0.070
MILLIMETERS
MIN
MAX
18.80
19.81
5.969
6.731
3.048
3.556
6.858
8.382
8.128
9.652
2.540 BSC
0.381
0.533
0.431
0.584
3.556
4.064
1.016
1.778
OUTLINE
GND (or -VCC)
STEERING DIODE APPLICATION
figure 1
CIRCUIT CONFIGURATION
PAD LAYOUT
Copyright © 2005
6-28-2005 REV K
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2




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