MMAD130 Diode Array Datasheet

MMAD130 Datasheet, PDF, Equivalent


Part Number

MMAD130

Description

Switching Diode Array

Manufacture

Microsemi Corporation

Total Page 2 Pages
Datasheet
Download MMAD130 Datasheet


MMAD130
SCOTTSDALE DIVISION
MMAD130
Switching Diode Array
Steering Diode TVS ArrayTM
DESCRIPTION
These low capacitance diode arrays are multiple, discrete, isolated junctions
fabricated by a planar process and mounted in a 14-PIN package for use as
steering diodes protecting up to ten I/O ports from ESD, EFT, or surge by
directing them either to the positive side of the power supply line or to
ground (see figure 1). An external TVS diode may be added between the
positive supply line and ground to prevent overvoltage on the supply rail.
They may also be used in fast switching core-driver applications. This
includes computers and peripheral equipment such as magnetic cores, thin-
film memories, plated-wire memories, etc., as well as decoding or encoding
applications. These arrays offer many advantages of integrated circuits such
as high-density packaging and improved reliability. This is a result of fewer
pick and place operations, smaller footprint, smaller weight, and elimination
of various discrete packages that may not be as user friendly in PC board
mounting.
SWITCHING AND
STEERING ARRAY
1 14
2 13
3 12
4 11
5 10
69
78
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
Top Viewing Pin Layout
FEATURES
20 Diode Array / protects 10 lines
Molded 14-Pin SOIC Package
UL 94V-0 Flammability Classification
Low Capacitance 1.5 pF per diode
Switching speeds less than 5 ns
IEC 61000-4 compatible
61000-4-2 (ESD): Air 15kV, contact – 8 kV
61000-4-4 (EFT): 40A – 5/50 ns
61000-4-5 (surge): 12A, 8/20 µs
APPLICATIONS / BENEFITS
High Frequency Data Lines
RS-232 & RS-422 Interface Networks
Ethernet: 10 Base T
Computer I / O Ports
LAN
Switching Core Drivers
MAXIMUM RATINGS
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Forward Surge Current: 2 Amps (8.3 ms)
12 Amps (8/20 µs)
Continuous Forward Current: 400 mA (one diode)
Power Dissipation (PD): 1500 mW (total)
MECHANICAL AND PACKAGING
Weight 0.127 grams (approximate)
Marking: Logo, device number, date code
Pin #1 defined by indent on top of package
Tape & Reel packaging: 2500 pcs (STANDARD)
Carrier tube packaging: 55 pcs
ELECTRICAL CHARACTERISTICS PER LINE @ 25°C Unless otherwise specified
PART
NUMBER
BREAKDOWN
VOLTAGE
V BR
@ IBR =100µA
V
WORKING
PEAK
REVERSE
VOLTAGE
V RWM
V
LEAKAGE
CURRENT
IR
TA = 25°C
µA
LEAKAGE
CURRENT
IR
TA = 150°C
µA
CAPACITANCE
C
@0V
pF
REVERSE
RECOVERY
TIME
trr
ns
FORWARD
VOLTAGE
VF
IF = 10 mA
V
MMAD130
MIN
90
MAX
75
MAX
0.200
@V R
20
MAX
300
@V R
20
TYP
1.5
MAX
5.0
MAX
1.00
FORWARD
VOLTAGE
VF
IF = 100 mA
V
MAX
1.20
Copyright © 2001
MSCXXXX.PDF 06-24 2002 REV J
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1

MMAD130
SCOTTSDALE DIVISION
MMAD130
Switching Diode Array
Steering Diode TVS ArrayTM
Symbol
VBR
VRWM
VF
IR
C
SYMBOLS & DEFINITIONS
DEFINITION
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature.
Capacitance: The capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in
picofarads.
OUTLINE AND CIRCUIT
A Supply rail (or +Vcc)
BP
G
D
L
C
K
J
F
DIM
A
B
C
D
F
G
J
K
L
P
INCHES
MIN MAX
0.336 0.344
0.150 0.158
0.053 0.069
0.011 0.021
0.016 0.050
0.050 BSC
0.006
0.004
0.189
0.228
0.010
0.008
0.206
0.244
MILLIMETERS
MIN MAX
8.53 8.74
3.81 4.01
1.35 1.75
0.28 0.53
0.41 1.27
01.27 BSC
0.15 0.25
0.10 0.20
4.80 5.23
5.79 6.19
OUTLINE
0.275
6.99
0.155
3.94
0.060
1.52
I/O Port
GND (or –Vcc)
STEERING DIODE APPLICATION
figure 1
0.024
0.61
0.050
1.27
inches
mm
PAD LAYOUT
CIRCUIT CONFIGURATION
Copyright © 2001
MSCXXXX.PDF 06-24 2002 REV J
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2


Features SCOTTSDALE DIVISION MMAD130 Switching D iode Array Steering Diode TVS ArrayTM WWW. Microsemi . COM DESCRIPTION These low capacitance diode arrays are multi ple, discrete, isolated junctions fabri cated by a planar process and mounted i n a 14-PIN package for use as steering diodes protecting up to ten I/O ports f rom ESD, EFT, or surge by directing the m either to the positive side of the po wer supply line or to ground (see figur e 1). An external TVS diode may be adde d between the positive supply line and ground to prevent overvoltage on the su pply rail. They may also be used in fas t switching core-driver applications. T his includes computers and peripheral e quipment such as magnetic cores, thinfi lm memories, plated-wire memories, etc. , as well as decoding or encoding appli cations. These arrays offer many advant ages of integrated circuits such as hig h-density packaging and improved reliab ility. This is a result of fewer pick a nd place operations, smaller footprint, smaller weight, and eli.
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