MMBD1000LT1 Switching Diode Datasheet

MMBD1000LT1 Datasheet, PDF, Equivalent


Part Number

MMBD1000LT1

Description

Switching Diode

Manufacture

Motorola

Total Page 8 Pages
Datasheet
Download MMBD1000LT1 Datasheet


MMBD1000LT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBD1000LT1/D
Switching Diode
Part of the GreenLinePortfolio of devices with energy–conserving traits.
This switching diode has the following features:
Very Low Leakage (500 pA) promotes extended battery life by decreas-
ing energy waste
Offered in four Surface Mount package types
Available in 8 mm Tape and Reel in quantities of 3,000
Applications
ESD Protection
Reverse Polarity Protection
Steering Logic
Medium–Speed Switching
MMBD1000LT1
MMBD2000T1
MMBD3000T1
MMSD1000T1
Motorola Preferred Devices
MMBD1000LT1
3
1
2
CASE 318-07, STYLE 8
SOT-23 (TO-236AB)
3
CATHODE
1
ANODE
MAXIMUM RATINGS
Rating
Symbol
Value
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
VR
IF
IFM
(surge)
30
200
500
DEVICE MARKING
MMBD1000LT1 = AY
MMBD2000T1 = DH
MMBD3000T1 = XP
MMSD1000T1 = 4K
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Total Device Dissipation FR-4 Board (1)
TA = 25°C
MMBD1000LT1, MMBD3000T1,
MMSD1000T1
MMBD2000T1
Derate above 25°C MMBD1000LT1, MMBD3000T1,
MMSD1000T1
MMBD2000T1
PD
225
150
1.8
1.2
Thermal Resistance Junction to Ambient
MMBD1000LT1, MMBD3000T1,
MMSD1000T1
MMBD2000T1
RθJA
556
833
Junction and Storage Temperature
TJ, Tstg – 55 to +150
(1) Device mounted on a FR-4 glass epoxy printed circuit board using the minimum
recommended footprint.
GreenLine is a trademark of Motorola, Inc.
Thermal Clad is a registered trademark of the Berquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Unit
Vdc
mAdc
mA
Unit
mW
mW/°C
°C/W
°C
MMBD2000T1
3
1
2
CASE 419-02, STYLE 2
SC–70/SOT–323
3
CATHODE
1
ANODE
MMBD3000T1
3
2
1
CASE 318D-03, STYLE 2
SC–59
3
CATHODE
2
ANODE
MMSD1000T1
2
1
CASE 425-04, STYLE 1
SOD–123
1
CATHODE
2
ANODE
©MMotootorroollaa, SInmc. 1a9ll95Signal Transistors, FETs and Diodes Device Data
1

MMBD1000LT1
MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Reverse Breakdown Voltage (IBR = 100 µA)
Reverse Voltage Leakage Current (VR = 75 V)
Forward Voltage (IF = 1.0 mA)
Forward Voltage (IF = 10 mA)
Diode Capacitance (VR = 0 V, f = 1.0 MHz)
Reverse Recovery Time (IF = IR = 10 mA) (Figure 1)
Symbol
Min
Max
Unit
V(BR)
30
V
IR — 500 pA
VF — 850 mV
— 950
CD — 2.0 pF
trr — 3.0 µs
+10 V
820
2k
100 µH
0.1 µF
IF
0.1 µF
tr tp
10%
t
IF
trr t
50 OUTPUT
PULSE
GENERATOR
DUT
50 INPUT
90%
SAMPLING
OSCILLOSCOPE
VR
INPUT SIGNAL
iR(REC) = 1 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
Notes: 1. A 2.0 kvariable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBD1000LT1/ D Switching Diode Part of the GreenLin e™ Portfolio of devices with energy conserving traits. This switching diod e has the following features: • Very Low Leakage (≤ 500 pA) promotes exten ded battery life by decreasing energy w aste • Offered in four Surface Mount package types • Available in 8 mm Tap e and Reel in quantities of 3,000 Appli cations • ESD Protection • Reverse Polarity Protection • Steering Logic • Medium–Speed Switching MMBD1000L T1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Mot orola Preferred Devices MMBD1000LT1 3 1 2 CASE 318-07, STYLE 8 SOT-23 (TO-23 6AB) 3 CATHODE 1 ANODE MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Cur rent Symbol VR IF IFM (surge) Value 30 200 500 Unit Vdc mAdc mA MMBD2000T1 3 1 2 CASE 419-02, STYLE 2 SC–70/SOT 323 3 CATHODE 1 ANODE DEVICE MARKING MMBD1000LT1 = AY MMBD2000T1 = DH MMBD3000T1 = XP MMSD1000T1 = 4K MMBD3000T1 3 THERMAL CHA.
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