MMBD101LT1 BARRIER DIODES Datasheet

MMBD101LT1 Datasheet, PDF, Equivalent


Part Number

MMBD101LT1

Description

SILICON SCHOTTKY BARRIER DIODES

Manufacture

ON

Total Page 4 Pages
Datasheet
Download MMBD101LT1 Datasheet


MMBD101LT1
MBD101, MMBD101LT1
Preferred Device
Schottky Barrier Diodes
Designed primarily for UHF mixer applications but suitable also for
use in detector and ultra−fast switching circuits. Supplied in an
inexpensive plastic package for low−cost, high−volume consumer
requirements. Also available in Surface Mount package.
Features
Low Noise Figure − 6.0 dB Typ @ 1.0 GHz
Very Low Capacitance − Less Than 1.0 pF
High Forward Conductance − 0.5 V (Typ) @ IF = 10 mA
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Reverse Voltage
Forward Power Dissipation
TA = 25°C
MBD101
MMBD101LT1
VR
PF
Value
7.0
280
225
Unit
V
mW
Derate above 25°C
MBD101
MMBD101LT1
2.2 mW/°C
1.8
Junction Temperature
TJ
+150
°C
Storage Temperature Range
Tstg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(IR = 10 mA)
V(BR)R 7.0 10
V
Diode Capacitance
(VR = 0, f = 1.0 MHz,
Note 1, page 2)
CD − 0.88 1.0 pF
Forward Voltage
(IF = 10 mA)
Reverse Leakage
(VR = 3.0 V)
VF
− 0.5 0.6
V
IR − 0.02 0.25 mA
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 3
1
http://onsemi.com
SILICON SCHOTTKY
BARRIER DIODES
TO−92 2−Lead
CASE 182
STYLE 1
1
22
CATHODE
1
ANODE
MARKING
DIAGRAMS
MBD
101
AYWW G
G
SOT−23 (TO−236)
3 CASE 318
STYLE 8
1 4M M G
2G
3 11
CATHODE
ANODE
(Pin 2 Not Connected)
A = Assembly Location
Y = Year
WW = Work Week
4M = Device Code (SOT−23)
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
MBD101
TO−92 5000 Units / Box
MBD101G
TO−92 5000 Units / Box
(Pb−Free)
MMBD101LT1
SOT−23 3000 / Tape & Reel
MMBD101LT1G SOT−23 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MBD101/D

MMBD101LT1
MBD101, MMBD101LT1
TYPICAL CHARACTERISTICS
(TA = 25°C unless noted)
1.0
0.7
0.5
0.2
VR = 3.0 V
100
TA = 85°C
10
0.1
0.07
TA = −40°C
0.05 1.0 TA = 25°C
0.02
0.01
30 40 50 60 70 80 90 100 110 120 130
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Reverse Leakage
0.1
0.3
0.4 0.5 0.6 0.7
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
1.0 11
10 LOCAL OSCILLATOR FREQUENCY = 1.0 GHz
9.0 (TEST CIRCUIT IN FIGURE 5)
0.9
8.0
7.0
0.8 6.0
5.0
4.0
0.7
3.0
2.0
0.6 0
1.0
1.0
2.0
3.0
4.0
0.1 0.2
0.5 1.0 2.0
5.0 10
VR, REVERSE VOLTAGE (VOLTS)
PLO, LOCAL OSCILLATOR POWER (mW)
Figure 3. Capacitance
Figure 4. Noise Figure
LOCAL
OSCILLATOR
UHF
NOISE SOURCE
H.P. 349A
DIODE IN
TUNED
MOUNT
NOISE
FIGURE METER
H.P. 342A
IF AMPLIFIER
NF = 1.5 dB
f = 30 MHz
Figure 5. Noise Figure Test Circuit
NOTES ON TESTING AND SPECIFICATIONS
Note 1 — CD is measured using a capacitance bridge (Boonton
Electronics Model 75A or equivalent).
Note 2 — Noise figure measured with diode under test in tuned
diode mount using UHF noise source and local oscillator
(LO) frequency of 1.0 GHz. The LO power is adjusted
for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30 MHz, see
Figure 5.
Note 3 — LS is measured on a package having a short instead of a
die, using an impedance bridge (Boonton Radio Model
250A RX Meter).
http://onsemi.com
2


Features MBD101, MMBD101LT1 Preferred Device Scho ttky Barrier Diodes Designed primarily for UHF mixer applications but suitable also for use in detector and ultra−f ast switching circuits. Supplied in an inexpensive plastic package for low−c ost, high−volume consumer requirement s. Also available in Surface Mount pack age. Features • Low Noise Figure − 6.0 dB Typ @ 1.0 GHz • Very Low Capac itance − Less Than 1.0 pF • High Fo rward Conductance − 0.5 V (Typ) @ IF = 10 mA • Pb−Free Packages are Avai lable MAXIMUM RATINGS Rating Symbol Reverse Voltage Forward Power Dissipa tion TA = 25°C MBD101 MMBD101LT1 V R PF Value 7.0 280 225 Unit V mW Der ate above 25°C MBD101 MMBD101LT1 2. 2 mW/°C 1.8 Junction Temperature TJ +150 °C Storage Temperature Range Tstg −55 to +150 °C Stresses exceed ing Maximum Ratings may damage the devi ce. Maximum Ratings are stress ratings only. Functional operation above the Re commended Operating Conditions is not implied. Extended exposur.
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