Document
MMBD1201 / 1203 / 1204 / 1205
Discrete POWER & Signal Technologies
MMBD1201 / 1203 / 1204 / 1205
CONNECTION DIAGRAMS
3
1201
3
3
1203
3
24
1 2 NC 3 1 3 2
2
1
2
1204
1205
SOT-23
1
MARKING MMBD1201 24 MMBD1204A 27 MMBD1203 26 MMBD1205A 28
1
2
1
2
High Conductance Ultra Fast Diode
Sourced from Process 1P.
Absolute Maximum Ratings*
Symbol
W IV IO IF if if(surge) Working Inverse Voltage Average Rectified Current DC Forward Current Recurrent Peak Forward Current
TA = 25°C unless otherwise noted
Parameter
Value
50 200 600 700 1.0 2.0 -55 to +150 150
Units
V mA mA mA A A °C °C
Tstg TJ
Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond Storage Temperature Range Operating Junction Temperature
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient
Max
MMBD1201/1203/1204/1205* 350 2.8 357
Units
mW mW/°C °C/W
*Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2
ã 1997 Fairchild Semiconductor Corporation
MMBD1201 / 1203 / 1204 / 1205
High Conductance Ultra Fast Diode
(continued)
Electrical Characteristics
Symbol
BV IR
TA = 25°C unless otherwise noted
Parameter
Breakdown Voltage Reverse Current
Test Conditions
IR = 100 µ A VR = 20 V VR = 50 V VR = 50 V, TA = 150°C IF = 1.0 mA IF = 10 mA IF = 100 mA IF = 200 mA IF = 300 mA VR = 0, f = 1.0 MHz IRR = 1.0 mA, IF = IR = 10 mA, RL = 100Ω
Min
100
Max
25 50 5.0 600 740 920 1.0 1.1 2.0 4.0
Units
V nA nA µA mV mV mV V V pF nS
VF
Forward Voltage
550 660 820 0.87
CT TRR
Diode Capacitance Reverse Recovery Time
Typical Characteristics
V V RR - REVERSE VOLTAGE (V)
150
IR - REVERSE CURRENT (nA)
REVERSE VOLTAGE vs REVERSE CURRENT BV - 1.0 to 100 uA
Ta= 25°C
REVERSE CURRENT vs REVERSE VOLTAGE IR - 10 to 100 V
300 Ta= 25°C 250 200 150 100 50 0 10 20 30 50 VR - REVERSE VOLTAGE (V) 70 100
140
130
120
110
1
2
3 5 10 20 30 50 I R - REVERSE CURRENT (uA)
100
GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature
FORWARD VOLTAGE vs FORWARD CURRENT VF - 1.0 to 100 uA
VF V F - FORWARD VOLTAGE (mV)
FORWARD VOLTAGE vs FORWARD CURRENT VF - 0.1 to 10 mA
V F - FORWARD VOLTAGE (mV) V F
485 Ta= 25°C 450 400 350 300 250 225 1 2 5 10 20 30 50 IF - FORWARD CURRENT (uA) 3 100
725 Ta= 25°C 700 650 600 550 500 450 0.1
0.2 0.3 0.5 1 2 3 5 I F - FORWARD CURRENT (mA)
10
MMBD1201 / 1203 / 1204 / 1205
High Conductance Ultra Fast Diode
(continued)
Typical Characteristics
(continued)
FORWARD VOLTAGE vs FORWARD CURRENT VF - 10 - 800 mA
V V FF - FORWARD VOLTAGE (V)
1.5 1.4 1.2 1 0.8 0.6 10
Ta= 25°C
CAPACITANCE vs REVERSE VOLTAGE VR - 0.0 to 15 V
1.3 CAPACITANCE (pF)
Ta= 25°C
1.2
1.1
20
30 50 100 200 300 IF - FORWARD CURRENT (mA)
500
1
0
2
4 6 8 10 REVERSE VOLTAGE (V)
12
14 15
REVERSE RECOVERY TIME vs REVERSE CURRENT TRR - IR 10 mA vs 60 mA
REVERSE RECOVERY (nS) 4 3.5 3 2.5 2 1.5 1 10 20 30 40 50 REVERSE CURRENT (mA) 60
PD - POWER DISSIPATION (mW)
Ta= 25°C
Average Rectified Current (Io) & Forward Current (I F) versus Ambient Temperature (TA)
500 400 300 200 100 0
IR -F OR WA R
D
CU RR EN
TS
TE
Y Io - A ST VER AT AGE E REC -m TIFIE D CU A RRE NT mA
AD
IRR (Reverse Recovery Current) = 1.0 mA - Rloop = 100 Ohms
0
50 100 150 o TA - AMBIENT TEMPERATURE ( C)
POWER DERATING CURVE
500
P D - POWER DISSIPATION (mW) PD
400
DO-35 Pkg
300
200
SOT-23 Pkg
100
0
0
50 100 150 IO - AVERAGE TEMPERATURE ( oC)
200
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™
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