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MMBD1204 Dataheets PDF



Part Number MMBD1204
Manufacturers Fairchild
Logo Fairchild
Description Small Signal Diodes
Datasheet MMBD1204 DatasheetMMBD1204 Datasheet (PDF)

MMBD1201 / 1203 / 1204 / 1205 Discrete POWER & Signal Technologies MMBD1201 / 1203 / 1204 / 1205 CONNECTION DIAGRAMS 3 1201 3 3 1203 3 24 1 2 NC 3 1 3 2 2 1 2 1204 1205 SOT-23 1 MARKING MMBD1201 24 MMBD1204A 27 MMBD1203 26 MMBD1205A 28 1 2 1 2 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol W IV IO IF if if(surge) Working Inverse Voltage Average Rectified Current DC Forward Current Recurrent Peak Forward Current TA = 25°C unless.

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MMBD1201 / 1203 / 1204 / 1205 Discrete POWER & Signal Technologies MMBD1201 / 1203 / 1204 / 1205 CONNECTION DIAGRAMS 3 1201 3 3 1203 3 24 1 2 NC 3 1 3 2 2 1 2 1204 1205 SOT-23 1 MARKING MMBD1201 24 MMBD1204A 27 MMBD1203 26 MMBD1205A 28 1 2 1 2 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol W IV IO IF if if(surge) Working Inverse Voltage Average Rectified Current DC Forward Current Recurrent Peak Forward Current TA = 25°C unless otherwise noted Parameter Value 50 200 600 700 1.0 2.0 -55 to +150 150 Units V mA mA mA A A °C °C Tstg TJ Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond Storage Temperature Range Operating Junction Temperature *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max MMBD1201/1203/1204/1205* 350 2.8 357 Units mW mW/°C °C/W *Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2 ã 1997 Fairchild Semiconductor Corporation MMBD1201 / 1203 / 1204 / 1205 High Conductance Ultra Fast Diode (continued) Electrical Characteristics Symbol BV IR TA = 25°C unless otherwise noted Parameter Breakdown Voltage Reverse Current Test Conditions IR = 100 µ A VR = 20 V VR = 50 V VR = 50 V, TA = 150°C IF = 1.0 mA IF = 10 mA IF = 100 mA IF = 200 mA IF = 300 mA VR = 0, f = 1.0 MHz IRR = 1.0 mA, IF = IR = 10 mA, RL = 100Ω Min 100 Max 25 50 5.0 600 740 920 1.0 1.1 2.0 4.0 Units V nA nA µA mV mV mV V V pF nS VF Forward Voltage 550 660 820 0.87 CT TRR Diode Capacitance Reverse Recovery Time Typical Characteristics V V RR - REVERSE VOLTAGE (V) 150 IR - REVERSE CURRENT (nA) REVERSE VOLTAGE vs REVERSE CURRENT BV - 1.0 to 100 uA Ta= 25°C REVERSE CURRENT vs REVERSE VOLTAGE IR - 10 to 100 V 300 Ta= 25°C 250 200 150 100 50 0 10 20 30 50 VR - REVERSE VOLTAGE (V) 70 100 140 130 120 110 1 2 3 5 10 20 30 50 I R - REVERSE CURRENT (uA) 100 GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature FORWARD VOLTAGE vs FORWARD CURRENT VF - 1.0 to 100 uA VF V F - FORWARD VOLTAGE (mV) FORWARD VOLTAGE vs FORWARD CURRENT VF - 0.1 to 10 mA V F - FORWARD VOLTAGE (mV) V F 485 Ta= 25°C 450 400 350 300 250 225 1 2 5 10 20 30 50 IF - FORWARD CURRENT (uA) 3 100 725 Ta= 25°C 700 650 600 550 500 450 0.1 0.2 0.3 0.5 1 2 3 5 I F - FORWARD CURRENT (mA) 10 MMBD1201 / 1203 / 1204 / 1205 High Conductance Ultra Fast Diode (continued) Typical Characteristics (continued) FORWARD VOLTAGE vs FORWARD CURRENT VF - 10 - 800 mA V V FF - FORWARD VOLTAGE (V) 1.5 1.4 1.2 1 0.8 0.6 10 Ta= 25°C CAPACITANCE vs REVERSE VOLTAGE VR - 0.0 to 15 V 1.3 CAPACITANCE (pF) Ta= 25°C 1.2 1.1 20 30 50 100 200 300 IF - FORWARD CURRENT (mA) 500 1 0 2 4 6 8 10 REVERSE VOLTAGE (V) 12 14 15 REVERSE RECOVERY TIME vs REVERSE CURRENT TRR - IR 10 mA vs 60 mA REVERSE RECOVERY (nS) 4 3.5 3 2.5 2 1.5 1 10 20 30 40 50 REVERSE CURRENT (mA) 60 PD - POWER DISSIPATION (mW) Ta= 25°C Average Rectified Current (Io) & Forward Current (I F) versus Ambient Temperature (TA) 500 400 300 200 100 0 IR -F OR WA R D CU RR EN TS TE Y Io - A ST VER AT AGE E REC -m TIFIE D CU A RRE NT mA AD IRR (Reverse Recovery Current) = 1.0 mA - Rloop = 100 Ohms 0 50 100 150 o TA - AMBIENT TEMPERATURE ( C) POWER DERATING CURVE 500 P D - POWER DISSIPATION (mW) PD 400 DO-35 Pkg 300 200 SOT-23 Pkg 100 0 0 50 100 150 IO - AVERAGE TEMPERATURE ( oC) 200 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ DISCLAIMER ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quite Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any compon.


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