Purpose Diode. MMBD1404A Datasheet


MMBD1404A Diode. Datasheet pdf. Equivalent


Part Number

MMBD1404A

Description

High Voltage General Purpose Diode

Manufacture

Fairchild

Total Page 6 Pages
Datasheet
Download MMBD1404A Datasheet


MMBD1404A
November 2014
MMBD1401A / MMBD1403A / MMBD1404A /
MMBD1405A
High-Voltage General-Purpose Diode
Descriptions
Sourced from process 2V.
3
2
1
SOT-23
Connection Diagram
1401A
3
1403A
3
1 2NC
1404A 3
12
1405A
3
12
12
Ordering Information
Part Number
MMBD1401A
MMBD1403A
MMBD1404A
MMBD1405A
Top Mark
A29
A32
A33
A34
Package
SOT-23 3L
SOT-23 3L
SOT-23 3L
SOT-23 3L
Packing Method
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
© 2004 Fairchild Semiconductor Corporation
MMBD1401A / MMBD1403A / MMBD1404A / MMBD1405A Rev. 1.1.0
www.fairchildsemi.com

MMBD1404A
Absolute Maximum Ratings(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
WIV
IO
IF
if
if(surge)
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
Non-Repetitive Peak Forward Pulse Width = 1.0 second
Surge Current
Pulse Width = 1.0 microsecond
175
200
600
700
1.0
2.0
V
mA
mA
mA
A
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature
-55 to +150
150
°C
°C
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
Thermal Characteristics(3)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Max.
Unit
Power Dissipation
PD Derate above 25°C
350 mW
2.8 mW/°C
RθJA Thermal Resistance, Junction-to-Ambient
357 °C/W
Note:
3. Device is mounted on glass epoxy PCB 1.6 inch × 1.6 inch × 0.06 inch, mounting pad for the collector lead minimum
0.93 in2.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
BV Breakdown Voltage
IR Reverse Current
VF Forward Voltage
CO Diode Capacitance
TRR Reverse Recovery Time
IR = 100 μA
VR = 120 V
VR = 175 V
IF = 10 mA
IF = 50 mA
IF = 200 mA
IF = 300 mA
VR = 0, f = 1.0 MHz
IF = IR = 30 mA,
IRR = 1.0 mA, RL = 100 Ω
Min.
250
760
Max.
40
100
800
920
1.1
1.25
2.0
50
Unit
V
nA
nA
mV
mV
V
V
pF
nS
© 2004 Fairchild Semiconductor Corporation
MMBD1401A / MMBD1403A / MMBD1404A / MMBD1405A Rev. 1.1.0
2
www.fairchildsemi.com


Features MMBD1401A / MMBD1403A / MMBD1404A / MMBD 1405A — High-Voltage General-Purpose Diode November 2014 MMBD1401A / MMBD1 403A / MMBD1404A / MMBD1405A High-Volta ge General-Purpose Diode Descriptions Sourced from process 2V. 3 2 1 SOT-23 Connection Diagram 1401A 3 1403A 3 1 2NC 1404A 3 12 1405A 3 12 12 Orde ring Information Part Number MMBD1401A MMBD1403A MMBD1404A MMBD1405A Top Mark A29 A32 A33 A34 Package SOT-23 3L SOT -23 3L SOT-23 3L SOT-23 3L Packing Met hod Tape and Reel Tape and Reel Tape an d Reel Tape and Reel © 2004 Fairchild Semiconductor Corporation MMBD1401A / MMBD1403A / MMBD1404A / MMBD1405A Rev. 1.1.0 www.fairchildsemi.com MMBD1401A / MMBD1403A / MMBD1404A / MMBD1405A High-Voltage General-Purpose Diode A bsolute Maximum Ratings(1), (2) Stress es exceeding the absolute maximum ratin gs may damage the device. The device ma y not function or be operable above the recommended operating conditions and s tressing the parts to these levels is not recommended. In addit.
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