MMBD1503 Leakage Diode Datasheet

MMBD1503 Datasheet, PDF, Equivalent


Part Number

MMBD1503

Description

High Conductance Low Leakage Diode

Manufacture

Fairchild

Total Page 4 Pages
Datasheet
Download MMBD1503 Datasheet


MMBD1503
Discrete POWER & Signal
Technologies
MMBD1501/A / 1503/A / 1504/A / 1505/A
3
SOT-23
3
11
12
2 MARKING
MMBD1501 11 MMBD1501A A11
1 MMBD1503 13 MMBD1503A A13
MMBD1504 14 MMBD1504A A14
MMBD1505 15 MMBD1505A A15
CONNECTION DIAGRAMS
1501 3
3 1503
1
1504
2 NC
3
12
3 1505
121 2
High Conductance Low Leakage Diode
Sourced from Process 1L.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
WIV Working Inverse Voltage
180
IO Average Rectified Current
200
IF DC Forward Current
600
if
if(surge)
Tstg
TJ
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
700
1.0
2.0
-55 to +150
150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Units
V
mA
mA
mA
A
A
°C
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
PD Total Device Dissipation
Derate above 25°C
RθJA Thermal Resistance, Junction to Ambient
MMBD1501/A/ 1503-1505/A*
350
2.8
357
*Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2
Units
mW
mW /°C
°C/W
ã 1997 Fairchild Semiconductor Corporation

MMBD1503
High Conductance Low Leakage Diode
(continued)
Electrical Characteristics
Symbol
BV
IR
Parameter
Breakdown Voltage
Reverse Current
VF Forward Voltage
CO Diode Capacitance
TA = 25°C unless otherwise noted
Test Conditions
IR = 5.0 µA
VR = 125 V
VR = 125 V, TA = 150°C
VR = 180 V
VR = 180 V, TA = 150°C
IF = 1.0 mA
IF = 10 mA
IF = 50 mA
IF = 100 mA
IF = 200 mA
IF = 300 mA
VR = 0, f = 1.0 MHz
Min
200
620
720
800
830
0.87
0.9
Max
1.0
3.0
10
5.0
720
830
890
930
1.1
1.15
4.0
Units
V
nA
µA
nA
µA
mV
mV
mV
mV
V
V
pF
Typical Characteristics
REVERSE VOLTAGE vs REVERSE CURRENT
BV - 3.0 to 100 uA
325
Ta= 25°C
300
275
250
3
5 10 20 30 50
IR - REVERSE CURRENT (uA)
100
REVERSE CURRENT vs REVERSE VOLTAGE
IR - 130 - 205 Volts
3
Ta= 25°C
2
1
0
130 150 170 190
VR - REVERSE VOLTAGE (V)
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
205
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 1 to 100 uA
Ta= 25°C
550
500
450
400
350
1
23 5
10 20 30 50
IF - FORWARD CURRENT (uA)
100
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 0.1 to 10 mA
800 Ta= 25°C
750
700
650
600
550
500
0.1
0.2 0.3 0.5
1
23 5
IF - FORWARD CURRENT (mA)
10


Features MMBD1501/A / 1503/A / 1504/A / 1505/A D iscrete POWER & Signal Technologies MM BD1501/A / 1503/A / 1504/A / 1505/A 3 C ONNECTION DIAGRAMS 3 1 11 2 1501 3 3 1503 1 2 NC 3 1 3 2 2 SOT-23 1 MMBD1501 MMBD1503 MMBD1504 MMBD1505 MARKING 11 MMBD1501A 13 MMBD1503A 14 MMBD1504A 15 MMBD1505A 1504 A11 A13 A1 4 A15 1505 1 2 1 2 High Conductan ce Low Leakage Diode Sourced from Proce ss 1L. Absolute Maximum Ratings* Symbo l W IV IO IF if if(surge) Working Inver se Voltage Average Rectified Current DC Forward Current Recurrent Peak Forward Current TA = 25°C unless otherwise n oted Parameter Value 180 200 600 700 1.0 2.0 -55 to +150 150 Units V mA mA mA A A °C °C Tstg TJ Peak Forward S urge Current Pulse width = 1.0 second P ulse width = 1.0 microsecond Storage Te mperature Range Operating Junction Temp erature *These ratings are limiting va lues above which the serviceability of any semiconductor device may be impaire d. NOTES: 1) These ratings are based on a maximum junction tempera.
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