Leakage Diode. MMBD1703A Datasheet


MMBD1703A Diode. Datasheet pdf. Equivalent


MMBD1703A


High Conductance Low Leakage Diode
MMBD1701/A / 1703/A / 1704/A / 1705/A

Discrete POWER & Signal Technologies

MMBD1701/A / 1703/A / 1704/A / 1705/A
3
CONNECTION DIAGRAMS

3
1

85
2

1701

3

3

1703

1

2 NC 3

1 3

2

2

1704

1705

SOT-23

1

MMBD1701 MMBD1703 MMBD1704 MMBD1705

MARKING 85 MMBD1701A 87 MMBD1703A 88 MMBD1704A 89 MMBD1705A

85A 87A 88A 89A

1

2

1

2

High Conductance Low Leakage Diode
Sourced from Process 1T.

Absolute Maximum Ratings*
Symbol
W IV IO IF if if(surge) Tstg TJ Working Inverse Voltage Average Rectified Current DC Forward Current Recurrent Peak Forward Current Peak Forward Surge Current Pulse width = 1.0 second Storage Temperature Range Operating Junction Temperature

TA = 25°C unless otherwise noted

Parameter

Value
20 50 150 150 250 -55 to +150 150

Units
V mA mA mA mA °C °C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Thermal Characteristics
Symbol
PD RθJA

TA = 25°C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient

Max
MMBD1701/A /1703/A-1705/A* 350 2.8 357

Units
mW mW/°C °C/W

*Device mounted on glass epoxy PCB 1.6" X 1.6" X...



MMBD1703A
Discrete POWER & Signal
Technologies
MMBD1701/A / 1703/A / 1704/A / 1705/A
3
SOT-23
3
85
12
2 MARKING
MMBD1701 85
MMBD1701A 85A
1
MMBD1703 87
MMBD1703A 87A
MMBD1704 88
MMBD1704A 88A
MMBD1705 89
MMBD1705A 89A
CONNECTION DIAGRAMS
1701 3
3 1703
1
1704
2 NC
3
12
3 1705
1 21 2
High Conductance Low Leakage Diode
Sourced from Process 1T.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
W IV
IO
IF
if
if(surge)
Tstg
TJ
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse width = 1.0 second
Storage Temperature Range
Operating Junction Temperature
20
50
150
150
250
-55 to +150
150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Units
V
mA
mA
mA
mA
°C
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
PD Total Device Dissipation
Derate above 25°C
RθJA Thermal Resistance, Junction to Ambient
MMBD1701/A /1703/A-1705/A*
350
2.8
357
*Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2
Units
mW
mW /°C
°C/W
©1997 Fairchild Semiconductor Corporation
MMBD1700 Rev. B

MMBD1703A
High Conductance Low Leakage Diode
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
BV
IR
VF
CO
TRR
Parameter
Breakdown Voltage
Reverse Current
Forward Voltage
Diode Capacitance
Reverse Recovery Time
MMBD1701-1705
MMBD1701A-1705A
Test Conditions
IR = 5.0 µA
VR = 20 V
IF = 10 µA
IF = 100 µA
IF = 1.0 mA
IF = 10 mA
IF = 20 mA
IF = 50 mA
VR = 0, f = 1.0 MHz
IF = IR = 10 mA IRR = 1.0 mA,
RL = 100
IF = IR = 10 mA IRR = 1.0 mA,
RL = 100
Min
30
420
520
640
760
810
0.89
Max
50
500
610
740
880
950
1.1
1.0
Units
V
nA
mV
mV
mV
mV
mV
V
pF
700 pS
1.0 nS
Typical Characteristics
REVERSE VOLTAGE vs REVERSE CURRENT
BV - 1.0 to 100 uA
60
Ta= 25°C
REVERSE CURRENT vs REVERSE VOLTAGE
IR - 1 to 22 V
10
Ta= 25°C
50
40
1
23 5
10 20 30 50 100
IR - REVERSE CURRENT (uA)
5
0
1
23
5
10 20
VR - REVERSE VOLTAGE (V)
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 1.0 to 100 uA
600 Ta= 25°C
550
500
450
400
350
300
1
23 5
10 20 30 50
IF - FORWARD CURRENT (uA)
100
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 0.1 to 10 mA
850 Ta= 25°C
800
750
700
650
600
550
0.1
0.2 0.3 0.5 1
23 5
I F - FORWARD CURRENT (mA)
10




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