MONOLITHIC DUAL SWITCHING DIODE
Zowie Technology Corporation
Monolithic Dual Switching Diode
MMBD2836
3
1 2
SOT-23
ANODE 3
CATHODE 1
2 CATHODE
MAX...
Description
Zowie Technology Corporation
Monolithic Dual Switching Diode
MMBD2836
3
1 2
SOT-23
ANODE 3
CATHODE 1
2 CATHODE
MAXIMUM RATINGS Rating
Continuous Reverse Voltage Peak Forward Current
Symbol VR IF
Value 75 100
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board(1) TA=25oC Derate above 25oC
Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA=25oC Derate above 25oC Thermal Resistance, Junction to Ambient Junction and Storage Temperature
Symbol PD
R JA PD
R JA TJ,TSTG
Max.
225 1.8
556
300 2.4
417 -55 to +150
DEVICE MARKING MMBD2836=A2X
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min.
OFF CHARACTERISTICS
Reverse Breakdown Voltage ( IBR=100 uAdc )
V(BR)
75
Forward Voltage
( IF=10 mAdc ) ( IF=50 mAdc ) ( IF=100 mAdc )
VF
-
Unit Vdc mAdc
Unit mW mW / oC oC / W mW mW / oC oC / W oC
Max.
-
1000 1000 1200
Unit Vdc mVdc
Reverse Voltage Leakage Current (VR=50 Vdc )
IR 0.1 uAdc
-
Diode Capacitance ( VR=0, f=1.0MHZ )
CJ - 4.0 pF
Reverse Recovery Time ( IF=IR=10 mAdc, IR(REC=1.0mAdc, measured at IR=1.0mA RL=100 )
trr
- 4.0 nS
(1) FR-5=1.0 x 0.75 x 0.062in. (2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
REV. : 0
Zowie Technology Corporation
Zowie Technology Corporation
MMBD2836
820 +10 V
2k 100uH 0.1uF
IF
FIGURE 1. RECOVERY TIME EQUIVALENT TEST CIRCUIT
0.1uF
tr tp 10%
T
IF
trr T
50 OUTPUT PULSE
GENERATOR
D.U.T.
50 INPUT SAMPLING OSCIL...
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