MMBD2836 SWITCHING DIODE Datasheet

MMBD2836 Datasheet, PDF, Equivalent


Part Number

MMBD2836

Description

MONOLITHIC DUAL SWITCHING DIODE

Manufacture

Zowie Technology Corporation

Total Page 2 Pages
Datasheet
Download MMBD2836 Datasheet


MMBD2836
Zowie Technology Corporation
Monolithic Dual Switching Diode
MMBD2836
3
1
2
SOT-23
ANODE
3
CATHODE
1
2
CATHODE
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Peak Forward Current
Symbol
VR
IF
Value
75
100
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board(1) TA=25oC
Derate above 25oC
Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina Substrate,(2) TA=25oC
Derate above 25oC
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R JA
PD
R JA
TJ,TSTG
Max.
225
1.8
556
300
2.4
417
-55 to +150
DEVICE MARKING
MMBD2836=A2X
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min.
OFF CHARACTERISTICS
Reverse Breakdown Voltage
( IBR=100 uAdc )
V(BR)
75
Forward Voltage
( IF=10 mAdc )
( IF=50 mAdc )
( IF=100 mAdc )
VF
-
-
-
Unit
Vdc
mAdc
Unit
mW
mW / oC
oC / W
mW
mW / oC
oC / W
oC
Max.
-
1000
1000
1200
Unit
Vdc
mVdc
Reverse Voltage Leakage Current
(VR=50 Vdc )
-
IR 0.1 uAdc
-
Diode Capacitance
( VR=0, f=1.0MHZ )
CJ - 4.0 pF
Reverse Recovery Time
( IF=IR=10 mAdc, IR(REC=1.0mAdc, measured at IR=1.0mA RL=100 )
trr
- 4.0 nS
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
REV. : 0
Zowie Technology Corporation

MMBD2836
Zowie Technology Corporation
MMBD2836
820
+10 V
2k
100uH
0.1uF
IF
FIGURE 1. RECOVERY TIME EQUIVALENT TEST CIRCUIT
0.1uF
tr tp
10%
T
IF
trr T
50 OUTPUT
PULSE
GENERATOR
D.U.T.
50 INPUT
SAMPLING
OSCILLOSCOPE
VR
90%
INPUT SIGNAL
IR
Notes: 1. A 2.0k variable resistor adjusted for a Forward Current (IF) of 10mA.
2. Input pulse is adjusted so IR(peak) is equal to 10mA.
3. tp ยป trr
iR(REC) = 1mA
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1mA
FIGURE 2. FORWARD VOLTAGE
100
TA=85oC
10
TA= -40oC
1.0 TA=25oC
10
1.0
0.1
0.01
0.1
0.2
0.4 0.6 0.8 1.0
VF, FORWARD VOLTAGE ( VOLTS )
0.001
1.2 0
FIGURE 3. LEAKAGE CURRENT
TA=150oC
TA=125oC
TA=85oC
TA=55oC
TA=25oC
10 20 30 40
VR, REVERSE VOLTAGE ( VOLTS )
50
REV. : 0
1.75
1.50
1.25
1.00
0.75
0
FIGURE 4. CAPACITANCE
246
VR, REVERSE VOLTAGE ( VOLTS )
8
Zowie Technology Corporation


Features Zowie Technology Corporation Monolithic Dual Switching Diode MMBD2836 3 1 2 SOT-23 ANODE 3 CATHODE 1 2 CATHODE M AXIMUM RATINGS Rating Continuous Revers e Voltage Peak Forward Current Symbol VR IF Value 75 100 THERMAL CHARACTERI STICS Characteristic Total Device Dissi pation FR-5 Board(1) TA=25oC Derate abo ve 25oC Thermal Resistance, Junction to Ambient Total Device Dissipation Alumi na Substrate,(2) TA=25oC Derate above 2 5oC Thermal Resistance, Junction to Amb ient Junction and Storage Temperature Symbol PD R JA PD R JA TJ,TSTG Max. 22 5 1.8 556 300 2.4 417 -55 to +150 DEVI CE MARKING MMBD2836=A2X ELECTRICAL CHA RACTERISTICS (TA=25oC unless otherwise noted) (EACH DIODE) Characteristic Sy mbol Min. OFF CHARACTERISTICS Reverse Breakdown Voltage ( IBR=100 uAdc ) V( BR) 75 Forward Voltage ( IF=10 mAdc ) ( IF=50 mAdc ) ( IF=100 mAdc ) VF - Unit Vdc mAdc Unit mW mW / oC oC / W mW mW / oC oC / W oC Max. - 1000 1000 1200 Unit Vdc mVdc Reverse Voltage Leakage Current (VR=50 Vdc.
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