Switching Diodes. MMBD2836LT1 Datasheet


MMBD2836LT1 Diodes. Datasheet pdf. Equivalent


Part Number

MMBD2836LT1

Description

Monolithic Dual Switching Diodes

Manufacture

Motorola

Total Page 4 Pages
Datasheet
Download MMBD2836LT1 Datasheet


MMBD2836LT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBD2835LT1/D
Monolithic Dual Switching Diodes MMBD2835LT1
MMBD2836LT1
ANODE
3
CATHODE
1
2
CATHODE
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
Reverse Voltage
MMBD2835LT1
MMBD2836LT1
VR
Forward Current
THERMAL CHARACTERISTICS
IF
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
RqJA
PD
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
RqJA
TJ, Tstg
MMBD2835LT1 = A3X; MMBD2836LT1 = A2X
Value
35
75
100
Max
225
1.8
556
300
2.4
417
– 55 to +150
Unit
Vdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
OFF CHARACTERISTICS
Reverse Breakdown Voltage (IR = 100 µAdc)
MMBD2835LT1
MMBD2836LT1
V(BR)
Reverse Voltage Leakage Current
(VR = 30 Vdc)
(VR = 50 Vdc)
MMBD2835LT1
MMBD2836LT1
Diode Capacitance (VR = 0 V, f = 1.0 MHz)
Forward Voltage (IF = 10 mAdc)
Forward Voltage (IF = 50 mAdc)
Forward Voltage (IF = 100 mAdc)
Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1)
 1. FR– 5 = 1.0 0.75 0.062 in.
 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
IR
CT
VF
trr
3
1
2
CASE 318 – 08, STYLE 12
SOT– 23 (TO – 236AB)
Min Max Unit
35 — Vdc
75 —
— nAdc
— 100
100
— 4.0 pF
— 1.0 Vdc
— 1.0
— 1.2
— 4.0 ns
Thermal Clad is a trademark of the Bergquist Company
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1997
1

MMBD2836LT1
MMBD2835LT1 MMBD2836LT1
+10 V
820
2.0 k
100 µH
0.1 µF
IF
0.1 µF
tr tp
10%
t
50 OUTPUT
PULSE
GENERATOR
DUT 90%
50 INPUT
SAMPLING
VR
OSCILLOSCOPE
INPUT SIGNAL
IF
trr t
iR(REC) = 1.0 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kvariable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
100
10
1.0
0.1
0.2
TA = 85°C
CURVES APPLICABLE TO EACH CATHODE
TA = –40°C
10
1.0
TA = 150°C
TA = 125°C
TA = 25°C
0.4 0.6 0.8 1.0
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
1.2
0.1
0.01
0.001
0
TA = 85°C
TA = 55°C
TA = 25°C
10 20 30 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
50
1.75
1.50
1.25
1.00
0.75
0
2.0 4.0 6.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
8.0
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBD2835LT1/D M onolithic Dual Switching Diodes MMBD28 35LT1 MMBD2836LT1 ANODE 3 CATHODE 1 2 CATHODE 1 2 3 MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward C urrent MMBD2835LT1 MMBD2836LT1 Symbol V R IF Value 35 75 100 Unit Vdc mAdc CAS E 318 – 08, STYLE 12 SOT– 23 (TO 236AB) THERMAL CHARACTERISTICS Chara cteristic Total Device Dissipation FR 5 Board(1) TA = 25°C Derate above 25 °C Thermal Resistance, Junction to Amb ient Total Device Dissipation Alumina S ubstrate,(2) TA = 25°C Derate above 25 °C Thermal Resistance, Junction to Amb ient Junction and Storage Temperature S ymbol PD Max 225 1.8 RqJA PD 556 300 2. 4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C D EVICE MARKING MMBD2835LT1 = A3X; MMBD28 36LT1 = A2X ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (E ACH DIODE) Characteristic Symbol Min Ma x Unit OFF CHARACTERISTICS Reverse Breakdown Voltage (IR = 100 µAdc) Reverse Volta.
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