MMBD2837LT1 Switching Diodes Datasheet

MMBD2837LT1 Datasheet, PDF, Equivalent


Part Number

MMBD2837LT1

Description

Monolithic Dual Switching Diodes

Manufacture

ON

Total Page 4 Pages
Datasheet
Download MMBD2837LT1 Datasheet


MMBD2837LT1
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MMBD2837LT1,
MMBD2838LT1
Monolithic Dual Switching
Diodes
Features
Pb−Free Packages are Available
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
Value
Unit
Peak Reverse Voltage
D.C. Reverse Voltage
MMBD2837LT1
MMBD2838LT1
VRM
VR
75 Vdc
Vdc
30
50
Peak Forward Current
IFM 450 mAdc
300
Average Rectified Current
IO 150 mAdc
100
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Total Device Dissipation FR− 5 Board
(Note 1) TA = 25°C
Derate above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
PD 300 mW
2.4 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
−55 to +150
°C
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3
CATHODE
ANODE
1
2
ANODE
3
1
2
SOT−23 (TO−236AB)
CASE 318
STYLE 9
MARKING DIAGRAM
xxx M
1
xxx = Specific Device Code
MMBD2837LT1 − A5
MMBD2838LT1 − MA6
M = Date Code
ORDERING INFORMATION
Device
Package
MMBD2837LT1 SOT−23
MMBD2837LT1G SOT−23
(Pb−Free)
MMBD2838LT1 SOT−23
MMBD2838LT1G SOT−23
(Pb−Free)
Shipping
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
March, 2005 − Rev. 5
1
Publication Order Number:
MMBD2837LT1/D

MMBD2837LT1
MMBD2837LT1, MMBD2838LT1
ELECTRICAL CHARACTERISTICS (EACH DIODE) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 mAdc)
MMBD2837LT1
MMBD2838LT1
Reverse Voltage Leakage Current (Note 3.)
(VR = 30 Vdc)
(VR = 50 Vdc)
MMBD2837LT1
MMBD2838LT1
Diode Capacitance (VR = 0 V, f = 1.0 MHz)
Forward Voltage (IF = 10 mAdc)
Forward Voltage (IF = 50 mAdc)
Forward Voltage (IF = 100 mAdc)
Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1)
3. For each individual diode while the second diode is unbiased.
V(BR)
IR
CT
VF
trr
Min Max Unit
35 − Vdc
75 −
mAdc
− 0.1
− 0.1
− 4.0 pF
− 1.0 Vdc
− 1.0
− 1.2
− 4.0 ns
+10 V
820 W
2.0 k
100 mH
0.1 mF
IF
50 W OUTPUT
PULSE
GENERATOR
DUT
0.1 mF
tr tp
10%
t
50 W INPUT
SAMPLING
OSCILLOSCOPE
VR
90%
INPUT SIGNAL
IF
trr t
iR(REC) = 1.0 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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2


Features www.DataSheet4U.com MMBD2837LT1, MMBD28 38LT1 Monolithic Dual Switching Diodes Features • Pb−Free Packages are Av ailable http://onsemi.com 3 CATHODE ANODE 1 2 ANODE MAXIMUM RATINGS (EACH DIODE) Rating Peak Reverse Voltage D.C. Reverse Voltage MMBD2837LT1 MMBD2838LT 1 Peak Forward Current Average Rectifie d Current IFM IO Symbol VRM VR 30 50 45 0 300 150 100 mAdc mAdc 1 2 Value 75 Unit Vdc Vdc 3 SOT−23 (TO−236AB) C ASE 318 STYLE 9 Maximum ratings are th ose values beyond which device damage c an occur. Maximum ratings applied to th e device are individual stress limit va lues (not normal operating conditions) and are not valid simultaneously. If th ese limits are exceeded, device functio nal operation is not implied, damage ma y occur and reliability may be affected . MARKING DIAGRAM THERMAL CHARACTERIS TICS Rating Total Device Dissipation FR − 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junctio n−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C.
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