MMBD2838 Signal Diode Datasheet

MMBD2838 Datasheet, PDF, Equivalent


Part Number

MMBD2838

Description

Small Signal Diode

Manufacture

Fairchild

Total Page 2 Pages
Datasheet
Download MMBD2838 Datasheet


MMBD2838
MMBD2838
3
2
1
SOT-23
3
A6.
12
Connection Diagram
3
12
Small Signal Diode
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VRRM
Maximum Repetitive Reverse Voltage
75
IF(AV)
Average Rectified Forward Current
200
IFSM Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
1.0
2.0
Tstg Storage Temperature Range
TJ Operating Junction Temperature
-55 to +150
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD
RθJA
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient
Value
350
357
Units
V
mA
A
A
°C
°C
Units
mW
°C/W
Electrical Characteristics
Symbol
VR
VF
IR
CT
trr
Parameter
Breakdown Voltage
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
TA = 25°C unless otherwise noted
Test Conditions
IR = 100 µA
IF = 50 mA
IF = 100 mA
VR = 50 V
VR = 0, f = 1.0 MHz
IF = IR = 10 mA, IRR = 1.0 mA,
RL = 100
Min
75
Max
1.0
1.2
100
4.0
4.0
Units
V
V
V
nA
pF
ns
2002 Fairchild Semiconductor Corporation
MMBD2838, Rev. A

MMBD2838
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
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STAR*POWER™
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HiSeC™
Power247™
SuperSOT™-3
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I2
PowerTrench â
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ISOPLANAR™
QFET™
SuperSOT™-8
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LittleFET™
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FACT Quiet Series™ MicroPak™
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTENAPPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
effectiveness.
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H5


Features MMBD2838 MMBD2838 Connection Diagram 3 3 3 A6. 2 1 1 2 1 2 SOT-23 Small Sig nal Diode Absolute Maximum Ratings* Sym bol VRRM IF(AV) IFSM TA = 25°C unless otherwise noted Parameter Maximum Repe titive Reverse Voltage Average Rectifie d Forward Current Non-repetitive Peak F orward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond St orage Temperature Range Operating Junct ion Temperature Value 75 200 1.0 2.0 - 55 to +150 -55 to +150 Units V mA A A °C °C Tstg TJ *These ratings are li miting values above which the serviceab ility of any semiconductor device may b e impaired. NOTES: 1) These ratings are based on a maximum junction temperatur e of 150 degrees C. 2) These are steady state limits. The factory should be co nsulted on applications involving pulse d or low duty cycle operations. Therma l Characteristics Symbol PD RθJA Power Dissipation Thermal Resistance, Juncti on to Ambient Parameter Value 350 357 Units mW °C/W Electrical Characteristics Symbol VR VF IR CT trr .
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