MMBD2838 Signal Diode Datasheet
Small Signal Diode
|Total Page||2 Pages|
Small Signal Diode
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
IFSM Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Tstg Storage Temperature Range
TJ Operating Junction Temperature
-55 to +150
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Resistance, Junction to Ambient
Reverse Recovery Time
TA = 25°C unless otherwise noted
IR = 100 µA
IF = 50 mA
IF = 100 mA
VR = 50 V
VR = 0, f = 1.0 MHz
IF = IR = 10 mA, IRR = 1.0 mA,
RL = 100 Ω
2002 Fairchild Semiconductor Corporation
MMBD2838, Rev. A
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This datasheet contains the design specifications for
product development. Specifications may change in
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This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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|Features||MMBD2838 MMBD2838 Connection Diagram 3 3 3 A6. 2 1 1 2 1 2 SOT-23 Small Sig nal Diode Absolute Maximum Ratings* Sym bol VRRM IF(AV) IFSM TA = 25°C unless otherwise noted Parameter Maximum Repe titive Reverse Voltage Average Rectifie d Forward Current Non-repetitive Peak F orward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond St orage Temperature Range Operating Junct ion Temperature Value 75 200 1.0 2.0 - 55 to +150 -55 to +150 Units V mA A A °C °C Tstg TJ *These ratings are li miting values above which the serviceab ility of any semiconductor device may b e impaired. NOTES: 1) These ratings are based on a maximum junction temperatur e of 150 degrees C. 2) These are steady state limits. The factory should be co nsulted on applications involving pulse d or low duty cycle operations. Therma l Characteristics Symbol PD RθJA Power Dissipation Thermal Resistance, Juncti on to Ambient Parameter Value 350 357 Units mW °C/W Electrical Characteristics Symbol VR VF IR CT trr .|
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