MMBD2838LT1 Switching Diodes Datasheet

MMBD2838LT1 Datasheet, PDF, Equivalent


Part Number

MMBD2838LT1

Description

Monolithic Dual Switching Diodes

Manufacture

Motorola

Total Page 4 Pages
Datasheet
Download MMBD2838LT1 Datasheet


MMBD2838LT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBD2837LT1/D
Monolithic Dual Switching Diodes MMBD2837LT1
MMBD2838LT1
3
CATHODE
ANODE
1
2
ANODE
MAXIMUM RATINGS (EACH DIODE)
Rating
Peak Reverse Voltage
D.C. Reverse Voltage
MMBD2837LT1
MMBD2838LT1
Peak Forward Current
Symbol
VRM
VR
IFM
Average Rectified Current
IO
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBD2837LT1 = A5; MMBD2838LT1 = MA6
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Value
75
30
50
450
300
150
100
Max
225
1.8
556
300
2.4
417
– 55 to +150
Unit
Vdc
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 µAdc)
MMBD2837LT1
MMBD2838LT1
V(BR)
Reverse Voltage Leakage Current
(VR = 30 Vdc)
(VR = 50 Vdc)
MMBD2837LT1
MMBD2838LT1
Diode Capacitance (VR = 0 V, f = 1.0 MHz)
Forward Voltage (IF = 10 mAdc)
Forward Voltage (IF = 50 mAdc)
Forward Voltage (IF = 100 mAdc)
Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1)
 1. FR– 5 = 1.0 0.75 0.062 in.
 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
IR
CT
VF
trr
Thermal Clad is a trademark of the Bergquist Company
REV 1
©MMotootorroollaa,
Small–Signal
Inc. 1997
Transistors,
FETs
and
Diodes
Device
Data
3
1
2
CASE 318 – 08, STYLE 9
SOT– 23 (TO – 236AB)
Min Max Unit
35 — Vdc
75 —
µAdc
— 0.1
— 0.1
— 4.0 pF
— 1.0 Vdc
— 1.0
— 1.2
— 4.0 ns
1

MMBD2838LT1
MMBD2837LT1 MMBD2838LT1
820
+10 V
2.0 k
100 µH
0.1 µF
IF
0.1 µF
tr tp
10%
t
50 OUTPUT
PULSE
GENERATOR
DUT 90%
50 INPUT
SAMPLING
VR
OSCILLOSCOPE
INPUT SIGNAL
IF
trr t
iR(REC) = 1.0 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kvariable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
CURVES APPLICABLE TO EACH CATHODE
100
TA = 85°C
10
TA = –40°C
TA = 25°C
1.0
0.1
0.2
0.4 0.6 0.8 1.0
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
1.0
0.9
1.2
10
1.0
0.1
0.01
0.001
0
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
TA = 25°C
10 20 30 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
50
0.8
0.7
0.6
02
46
VR, REVERSE VOLTAGE (VOLTS)
8
Figure 4. Capacitance
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBD2837LT1/D M onolithic Dual Switching Diodes ANODE 1 2 ANODE MMBD2837LT1 MMBD2838LT1 3 CA THODE 3 1 MAXIMUM RATINGS (EACH DIODE ) Rating Peak Reverse Voltage D.C. Reve rse Voltage Peak Forward Current Averag e Rectified Current MMBD2837LT1 MMBD283 8LT1 Symbol VRM VR IFM IO Value 75 30 5 0 450 300 150 100 Unit Vdc Vdc mAdc mAd c 2 CASE 318 – 08, STYLE 9 SOT– 2 3 (TO – 236AB) THERMAL CHARACTERISTI CS Characteristic Total Device Dissipat ion FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junctio n to Ambient Total Device Dissipation A lumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junctio n to Ambient Junction and Storage Tempe rature Symbol PD Max 225 1.8 RqJA PD 55 6 300 2.4 RqJA TJ, Tstg 417 – 55 to + 150 Unit mW mW/°C °C/W mW mW/°C °C/ W °C DEVICE MARKING MMBD2837LT1 = A5; MMBD2838LT1 = MA6 ELECTRICAL CHARACTE RISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min .
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