MMBD352LT1 Mixer Diodes Datasheet

MMBD352LT1 Datasheet, PDF, Equivalent


Part Number

MMBD352LT1

Description

Dual Hot Carrier Mixer Diodes

Manufacture

Leshan Radio Company

Total Page 2 Pages
Datasheet
Download MMBD352LT1 Datasheet


MMBD352LT1
LESHAN RADIO COMPANY, LTD.
Dual Hot Carrier Mixer Diodes
These devices are designed primarily for UHF mixer applications but are
suitable also for use in detector and ultra–fast switching circuits.
• Very Low Capacitance — Less Than 1.0 pF @ Zero Volts
• Low Forward Voltage — 0.5 Volts (Typ) @ I F = 10 mA
MMBD352LT1
MMBD353LT1
MMBD354LT1
MMBD355LT1
3
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
THERMALCHARACTERISTICS
VR
7.0 V CC
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board (1)
T A = 25°C
Derate above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate (2) T A = 25°C
Derate above 25°C
RθJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
RθJA
T J ,T stg
417
–55 to +150
°C/W
°C
MMBD352LT1 = M5G; MMBD353LT1 = M4F; MMBD354LT1 = M6H; MMBD355LT1 = MJ1
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol Min
Max Unit
OFF CHARACTERISTICS
Forward Voltage
(I F = 10 mAdc)
Reverse Voltage Leakage Current
(V R = 3.0 V)
(V R = 7.0 V)
Capacitance
(V R = 0 V, f = 1.0 MHz)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
V F — 0.60 V
IR µA
— 0.25
— 10
C — 1.0 pF
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
1
2
1
ANODE
2
CATHODE
3
CATHODE/ANODE
MMBD352LT1
CASE 318–08, STYLE 11
SOT– 23 (TO–236AB)
12
CATHODE
ANODE
3
CATHODE/ANODE
MMBD353LT1
CASE 318–08, STYLE 19
SOT– 23 (TO–236AB)
3
CATHODE
ANODE
1
2
ANODE
MMBD354LT1
CASE 318–08, STYLE 9
SOT– 23 (TO–236AB)
ANODE
3
CATHODE
1
2
CATHODE
MMBD355LT1
CASE 318–08, STYLE 12
SOT– 23 (TO–236AB)
MMBD352. 353. 354. 355LT –1/2

MMBD352LT1
LESHAN RADIO COMPANY, LTD.
MMBD352LT1 MMBD353LT1
MMBD354LT1 MMBD355LT1
TYPICAL CHARACTERISTICS
100
TA = 85°C
10
T A=–40°C
1.0
T A = 25°C
1.0
0.9
0.8
0.7
0.1
0.3
0.4 0.5 0.6 0.7
V F , FORWARD VOLTAGE (VOLTS)
Figure 1. Forward Voltage
0.8
0.6
0
1.0 2.0
3.0 4.0
V R , REVERSE VOLTAGE (VOLTS)
Figure 2. Capacitance
MMBD352. 353. 354. 355LT–2/2


Features LESHAN RADIO COMPANY, LTD. Dual Hot Car rier Mixer Diodes These devices are des igned primarily for UHF mixer applicati ons but are suitable also for use in de tector and ultra–fast switching circu its. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts • Low Forwar d Voltage — 0.5 Volts (Typ) @ I F = 1 0 mA MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 3 MAXIMUM RATINGS (EACH DI ODE) Rating Symbol Value Unit Cont inuous Reverse Voltage THERMALCHARACTER ISTICS VR 7.0 V CC Characteristic S ymbol Max Unit Total Device Dissipat ion FR– 5 Board (1) T A = 25°C Derat e above 25°C PD 225 mW 1.8 mW/°C T hermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substr ate (2) T A = 25°C Derate above 25°C RθJA PD 556 °C/W 300 mW 2.4 mW/°C Thermal Resistance, Junction to Ambien t Junction and Storage Temperature DEVI CE MARKING RθJA T J ,T stg 417 –55 to +150 °C/W °C MMBD352LT1 = M5G; MMBD353LT1 = M4F; MMBD354LT1 = M6H; MMBD355LT1 = MJ1 ELECTRICA.
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