MMBD352LT1

LESHAN RADIO COMPANY, LTD. Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. Very Low Capacitance — Less Than 1.0 pF @ Zero Volts Low Forward Voltage — 0.5 Volts (Typ) @ I F = 10 mA MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 3 MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Continuous Reverse Voltage THERMALCHARACTERISTICS VR 7.0 V CC Characteristic Symbol Max Unit Total Device Dissipation FR– 5 Board (1) T A = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate (2) T A = 25°C Derate above 25°C RθJA PD 556 °C/W 300 mW 2.4 mW/°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING RθJA T J ,T stg 417 –55 to +150 °C/W °C MMBD352LT1 = M5G; MMBD353LT1 = M4F; MMBD354LT1 = M6H; MMBD355LT1 = MJ1 ELECTRICA...