MMBD352WT1 Barrier Diode Datasheet

MMBD352WT1 Datasheet, PDF, Equivalent


Part Number

MMBD352WT1

Description

Dual Shottky Barrier Diode

Manufacture

ON

Total Page 4 Pages
Datasheet
Download MMBD352WT1 Datasheet


MMBD352WT1
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MMBD352WT1
Dual Schottky Barrier Diode
These devices are designed primarily for UHF mixer applications
but are suitable also for use in detector and ultra−fast switching
circuits.
Features
Very Low Capacitance − Less Than 1.0 pF @ Zero Volts
Low Forward Voltage − 0.5 Volts (Typ) @ IF = 10 mA
Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
VR 7.0 VCC
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board
(Note 1)
TA = 25°C
Derate above 25°C
PD
200 mW
1.6 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
625 °C/W
Total Device Dissipation Alumina
Substrate (Note 2) TA = 25°C
Derate above 25°C
PD 300 mW
2.4 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
−55 to +150
°C
http://onsemi.com
1
ANODE
3
CATHODE/ANODE
2
CATHODE
3
1
2
SOT−323 (SC−70)
CASE 419
STYLE 9
MARKING DIAGRAM
M5 M
M5 = Device Code
M = Date Code
ORDERING INFORMATION
Device
MMBD352WT1
MMBD352WT1G
Package
SOT−323
SOT−323
(Pb−Free)
Shipping
3000/Tape & Reel
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
April, 2005 − Rev. 3
1
Publication Order Number:
MMBD352WT1/D

MMBD352WT1
MMBD352WT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Forward Voltage
(IF = 10 mAdc)
Reverse Voltage Leakage Current
(VR = 3.0 V)
(VR = 7.0 V)
Capacitance
(VR = 0 V, f = 1.0 MHz)
Symbol Min Max Unit
VF − 0.60 V
IR mA
− 0.25
− 10
C − 1.0 pF
TYPICAL CHARACTERISTICS
100 1.0
TA = 85°C
10
TA = −40°C
1.0
TA = 25°C
0.9
0.8
0.7
0.1
0.3
0.4 0.5 0.6 0.7
VF, FORWARD VOLTAGE (VOLTS)
Figure 1. Forward Voltage
0.6
0.8 0
1.0 2.0 3.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Capacitance
4.0
http://onsemi.com
2


Features www.DataSheet4U.com MMBD352WT1 Dual Sch ottky Barrier Diode These devices are d esigned primarily for UHF mixer applica tions but are suitable also for use in detector and ultra−fast switching cir cuits. Features • Very Low Capacitan ce − Less Than 1.0 pF @ Zero Volts Low Forward Voltage − 0.5 Volts (Ty p) @ IF = 10 mA • Pb−Free Package i s Available http://onsemi.com 1 ANODE 3 CATHODE/ANODE 2 CATHODE MAXIMUM R ATINGS Rating Continuous Reverse Voltag e Symbol VR Value 7.0 Unit VCC 3 1 2 M aximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are indiv idual stress limit values (not normal o perating conditions) and are not valid simultaneously. If these limits are exc eeded, device functional operation is n ot implied, damage may occur and reliab ility may be affected. SOT−323 (SC 70) CASE 419 STYLE 9 THERMAL CHARACTE RISTICS Characteristic Total Device Dis sipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Jun.
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