MMBD355LT1 Mixer Diodes Datasheet

MMBD355LT1 Datasheet, PDF, Equivalent


Part Number

MMBD355LT1

Description

Dual Hot Carrier Mixer Diodes

Manufacture

ON

Total Page 3 Pages
Datasheet
Download MMBD355LT1 Datasheet


MMBD355LT1
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MMBD352LT1,
MMBD353LT1,
MMBD354LT1,
MMBD355LT1
Dual Hot Carrier Mixer
Diodes
These devices are designed primarily for UHF mixer applications
but are suitable also for use in detector and ultrafast switching
circuits.
Features
Very Low Capacitance Less Than 1.0 pF @ Zero V
Low Forward Voltage 0.5 V (Typ) @ IF = 10 mA
PbFree Packages are Available
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol Value
Unit
Continuous Reverse Voltage
THERMAL CHARACTERISTICS
VR 7.0 VCC
Characteristic
Total Device Dissipation FR5 Board,
(Note 1) TA = 25°C
Derate above 25°C
Symbol
PD
Max
225
1.8
Unit
mW
mW/°C
Thermal Resistance, JunctiontoAmbient
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, JunctiontoAmbient RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg 55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
http://onsemi.com
1
2
3
SOT23 (TO236)
CASE 318
1
ANODE
3
CATHODE/ANODE
2
CATHODE
MMBD352LT1
STYLE 11
1
CATHODE 3
CATHODE/ANODE
2
ANODE
MMBD353LT1
STYLE 19
3
CATHODE
1 ANODE
2 ANODE
MMBD354LT1
STYLE 9
ANODE 3
1 CATHODE
2 CATHODE
MMBD355LT1
STYLE 12
MARKING DIAGRAM
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
(EACH DIODE)
Rating
Symbol Min Max Unit
Forward Voltage
(IF = 10 mAdc)
VF 0.60 V
Reverse Leakage Current (Note 3)
(VR = 3.0 V)
(VR = 7.0 V)
IR
0.25
10
Capacitance
(VR = 0 V, f = 1.0 MHz)
C 1.0
3. For each individual diode while the second diode is unbiased.
mA
pF
© Semiconductor Components Industries, LLC, 2006
September, 2006 Rev. 6
1
Mxx M G
G
1
Mxx = Device Code
M = Date Code*
G = PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in the
package dimensions section on page 2 of this data sheet.
Publication Order Number:
MMBD352LT1/D

MMBD355LT1
MMBD352LT1, MMBD353LT1, MMBD354LT1, MMBD355LT1
TYPICAL CHARACTERISTICS
100 1.0
TA = 85°C
10
TA = −40°C
1.0
TA = 25°C
0.9
0.8
0.7
0.1 0.6
0.3 0.4 0.5 0.6 0.7 0.8
0
VF, FORWARD VOLTAGE (VOLTS)
Figure 1. Forward Voltage
1.0 2.0 3.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Capacitance
4.0
ORDERING INFORMATION
Device
Marking
Package
Shipping
MMBD352LT1
SOT23
3,000 Units / Tape & Reel
MMBD352LT1G
MMBD352LT3
M5G
SOT23
(PbFree)
SOT23
3,000 Units / Tape & Reel
10,000 Units / Tape & Reel
MMBD352LT3G
SOT23
(PbFree)
10,000 Units / Tape & Reel
MMBD353LT1
SOT23
3,000 Units / Tape & Reel
MMBD353LT1G
MMBD353LT3
M4F
SOT23
(PbFree)
SOT23
3,000 Units / Tape & Reel
10,000 Units / Tape & Reel
MMBD353LT3G
SOT23
(PbFree)
10,000 Units / Tape & Reel
MMBD354LT1
MMBD354LT1G
M6H
SOT23
SOT23
(PbFree)
3,000 Units / Tape & Reel
3,000 Units / Tape & Reel
MMBD355LT1
MMBD355LT1G
SOT23
3,000 Units / Tape & Reel
MJ1
SOT23
3,000 Units / Tape & Reel
(PbFree)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2


Features www.DataSheet4U.com MMBD352LT1, MMBD353 LT1, MMBD354LT1, MMBD355LT1 Dual Hot Ca rrier Mixer Diodes These devices are de signed primarily for UHF mixer applicat ions but are suitable also for use in d etector and ultra−fast switching circ uits. Features 1 2 http://onsemi.com 3 SOT−23 (TO−236) CASE 318 • Ve ry Low Capacitance − Less Than 1.0 pF @ Zero V • Low Forward Voltage − 0 .5 V (Typ) @ IF = 10 mA • Pb−Free P ackages are Available MAXIMUM RATINGS ( EACH DIODE) Rating Continuous Reverse V oltage Symbol VR Value 7.0 Unit VCC 1 ANODE 3 CATHODE/ANODE MMBD352LT1 STYLE 11 2 CATHODE 1 CATHODE THERMAL CHAR ACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resi stance, Junction−to−Ambient Total D evice Dissipation Alumina Substrate, (N ote 2) TA = 25°C Derate above 25°C Th ermal Resistance, Junction−to−Ambie nt Junction and Storage Temperature Sym bol PD Max 225 1.8 556 300 2.4 417 −55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C ANODE 3 3 C.
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