Diode. MMBD4148 Datasheet

MMBD4148 Diode. Datasheet pdf. Equivalent


Part Number

MMBD4148

Description

350mW 100 Volt Silicon Epitaxial Diode

Manufacture

Micro Commercial Components

Total Page 3 Pages
Datasheet
Download MMBD4148 Datasheet


MMBD4148
MCC
  omponents
21201 Itasca Street Chatsworth

  !"#
$ %    !"#
MMBD4148

Features
Low Current Leakage
Low Cost
Small Outline Surface Mount Package
Pin Configuration
Top View
C
KA2
A
350mW 100 Volt
Silicon Epitaxial Diode
SOT-23
A
D
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Maximum Thermal Resistance; 357K/W Junction To Ambient
Electrical Characteristics @ 25°C Unless Otherwise Specified
Reverse Voltage
Peak Reverse
Voltage
VR 75V
VRM 100V
Average Rectified
Current
IO 150mA Resistive Load
f > 50Hz
Power Dissipation
Junction
Temperature
PTOT
TJ
350mW
150°C
Peak Forward Surge
IFSM
1A
t=1s,Non-Repetitive
Current
Maximum
Instantaneous
Forward Voltage
Maximum DC
VF .855V IFM = 10mA;
TJ = 25°C*
Reverse Current At IR 25nA TJ = 25°C
Rated DC Blocking
VR = 20 V
Voltage
Typical Junction
CJ 2pF Measured at
Capacitance
1.0MHz, VR=0V
Reverse Recovery Trr 4nS IF=10mA
Time
VR = 6V
RL=100
*Pulse test: Pulse width 300 µsec, Duty cycle 2%
FE
CB
G HJ
DIMENSIONS
INCHES
DIM MIN
MAX
A .110 .120
B .083 .098
C .047 .055
D .035 .041
E .070 .081
F .018 .024
G
.0005
.0039
H .035 .044
J .003 .007
K .015 .020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
Suggested Solder
Pad Layout
.031
.800
NOTE
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
www.mccsemi.com

MMBD4148
MMBD4148
Figure 1
Typical Forward Characteristics
20
10
6
4
2
MilliAmps 1
.6
.4
.2
25°C
.1
.06
.04
.02
.01
.4
.6 .8
1.0 1.2 1.4
Volts
Instantaneous Forward Current - Amperesversus
Instantaneous Forward Voltage - Volts
MCC
Figure 2
Forward Derating Curve
420
350
280
210
MilliWatts
140
70
Single Phase, Half Wave
60Hz Resistive or Inductive Load
0
0
50 75 100 125 150 175
°C
Admissable Power Dissipation - MilliWattsversus
Ambient Temperature -°C
Figure 3
Junction Capacitance
10
6
4
2
pF
1
.6
.4
.2
.1
.1
.2
.4
TJ=25°C
12
Volts
4
10 20 40
Junction Capacitance - pFversus
Reverse Voltage - Volts
100 200 400
1000
www.mccsemi.com


Features MCC Features • • •   omponents 21201 Itasca Street Chats worth    !"# $ %    !"# MMBD4148   Low Current Leakage Low Cost Sm all Outline Surface Mount Package C Pin Configuration Top View 350mW 100 Volt Silicon Epitaxial Diode KA2 A A D SO T-23 • • • Maximum Ratings C B Operating Temperature: -55 °C to +1 50°C Storage Temperature: -55°C to +1 50°C Maximum Thermal Resistance; 357K/ W Junction To Ambient G F E Electric al Characteristics @ 25°C Unless Other wise Specified Reverse Voltage Peak Rev erse Voltage Average Rectified Current Power Dissipation Junction Temperature Peak Forward Surge Current Maximum Inst antaneous Forward Voltage Maximum DC Re verse Current At Rated DC Blocking Volt age Typical Junction Capacitance Revers e Recovery Time VR VRM IO PTOT TJ IFSM 75V 100V 150mA 350mW 150°C 1A t=1s,Non -Repetitive Resistive Load f > 50Hz H J DIMENSIONS INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MM MIN.
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