MMBD4448

MMBD4448 General Description: The high breakdown voltage, fast switching speed and high forward conductance of this diode packaged in a SOT-23 Surface Mount package makes it desirable also as a general purpose diode. Features: DISCRETE POWER AND SIGNAL TECHNOLOGIES 350 milliwatt Power Dissipation package. High Breakdown Voltage, Fast Switching Speed. Typical capacitance less than 1.5 picofarad. Ordering: 7 inch reel (178 mm); 8 mm Tape; 3,000 units per reel. High Conductance Fast Diode Absolute Maximum Ratings* Sym Tstg TJ PD R OJA Wiv IO IF if iF(surge) TA = 25OC unless otherwise noted Parameter Storage Temperature Operating Junction Temperature Total Power Dissipation at TA = 25OC Linear Derating Factor from TA = 25OC Thermal Resistance Junction-to-Ambient Working Inverse Voltage Average Rectified Current DC Forward Current (IF) Recurrent Peak Forward Current (IF) Peak Forward Surge Current (IFSM) Pulse Width = 1.0 second Pulse Width = 1.0 microsecond Value -55 to +150 -55 to +150 350 2.8 357 75 200 600 700 1.0 2.0 Units OC OC W mW/OC OC/W V mA mA mA Amp Amp *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired CONNECTION DIAGRAMS 3 PACKAGE TO-236AB (Low) 3 Top Mark: RAB 1 2 NC 1 TA = 25OC unless otherwise noted 2 Electrical Characteristics SYM BV IR CHARACTERISTICS Breakdown Voltage 75 Reverse Leakage MIN 100 MAX UNITS V V IR IR TEST CONDITIONS = 100 uA = 5.0 uA 20 V 20 V TA = 150 Deg C 75...