Fast Diode. MMBD4448 Datasheet


MMBD4448 Diode. Datasheet pdf. Equivalent


MMBD4448


High Conductance Fast Diode
MMBD4448
General Description: The high breakdown voltage, fast switching speed and high forward conductance of this diode packaged in a SOT-23 Surface Mount package makes it desirable also as a general purpose diode. Features:

DISCRETE POWER AND SIGNAL TECHNOLOGIES

• 350 milliwatt Power Dissipation package. • High Breakdown Voltage, Fast Switching Speed. • Typical capacitance less than 1.5 picofarad. Ordering: • 7 inch reel (178 mm); 8 mm Tape; 3,000 units per reel.

High Conductance Fast Diode
Absolute Maximum Ratings* Sym
Tstg TJ PD R OJA Wiv IO IF if iF(surge)

TA = 25OC unless otherwise noted

Parameter
Storage Temperature Operating Junction Temperature Total Power Dissipation at TA = 25OC Linear Derating Factor from TA = 25OC Thermal Resistance Junction-to-Ambient Working Inverse Voltage Average Rectified Current DC Forward Current (IF) Recurrent Peak Forward Current (IF) Peak Forward Surge Current (IFSM) Pulse Width = 1.0 second Pulse Width = 1.0 microsecond

Value
-55 to +150 -55 to +150 350 2.8 357 75 200 600 700 1.0 2.0

Units
OC OC

W mW/OC OC/W V mA mA mA Amp Amp

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired

CONNECTION DIAGRAMS
3

PACKAGE TO-236AB (Low)

3

Top Mark: RAB
1 2 NC

1
TA = 25OC unless otherwise noted

2

Electrical Characteristics SYM BV IR

CHARACTERISTICS Breakdown Voltage 75 Reverse L...



MMBD4448
MMBD4448
DISCRETE POWER AND SIGNAL
TECHNOLOGIES
General Description:
Features:
The high breakdown voltage, fast switching speed and high
forward conductance of this diode packaged in a SOT-23
Surface Mount package makes it desirable also as a general
purpose diode.
350 milliwatt Power Dissipation package.
High Breakdown Voltage, Fast Switching Speed.
Typical capacitance less than 1.5 picofarad.
High Conductance
Fast Diode
Ordering:
7 inch reel (178 mm); 8 mm Tape; 3,000 units per reel.
Absolute Maximum Ratings* TA = 25OC unless otherwise noted
Sym
Parameter
Value
Units
Tstg
TJ
PD
ROJA
Wiv
IO
IF
if
iF(surge)
Storage Temperature
Operating Junction Temperature
Total Power Dissipation at TA = 25OC
Linear Derating Factor from TA = 25OC
Thermal Resistance Junction-to-Ambient
Working Inverse Voltage
Average Rectified Current
DC Forward Current (IF)
Recurrent Peak Forward Current (IF)
Peak Forward Surge Current (IFSM) Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
-55 to +150
-55 to +150
350
2.8
357
75
200
600
700
1.0
2.0
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
CONNECTION DIAGRAMS
3
PACKAGE
TO-236AB (Low)
OC
OC
W
mW/OC
OC/W
V
mA
mA
mA
Amp
Amp
3
Top Mark: RAB
1 2 NC
Electrical Characteristics
TA = 25OC unless otherwise noted
1
2
SYM
CHARACTERISTICS
BV Breakdown Voltage
75
IR Reverse Leakage
MIN
100
VF Forward Voltage
620
CT Capacitance
TRR Reverse Recovery Time
VFM Peak Forward Recovery Voltage
© 1997 Fairchild Semiconductor Corporation
MAX
25
50
5.0
720
1.0
2.0
4.0
2.5
UNITS
TEST CONDITIONS
V IR = 100 uA
V IR = 5.0 uA
nA VR = 20 V
uA VR = 20 V TA = 150 Deg C
uA VR = 75 V
mV IF = 5 mA
V IF = 100 mA
pF VR = 0.0 V, f = 1.0 MHz
ns IF = 10 mA IR = 10 mA
IRR = 1.0 Ma, RL = 100 ohms
V IF = 50 mA Pk Square Wave
Revision A; November 10, 1998

MMBD4448
DISCRETE POWER AND SIGNAL
TECHNOLOGIES
0.098 (2.489)
0.083 (2.108)
0.019 (0.483)
0.015 (0.381)
3
3 CHARACTERS MAX
0.055 (1.397)
0.047 (1.194)
0.040 (1.016)
0.035 (0.889)
12
0.080 (2.032)
0.070 (1.778)
0.120 (3.048)
0.110 (2.794)
0.024 (0.810)
0.018 (0.457)
LOW PROFILE 0.041 (1.041)
(49) 0.035 (0.889)
LOW PROFILE 0.0040 (0.102)
(49) 0.0005 (0.013)
0.0059 (0.150)
0.0035 (0.089)
SOT-23
Diode (pinout)
TO-236AB (LOW PROFILE)
22-August-1994




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