MMBD4448 Diode 350mW Datasheet

MMBD4448 Datasheet, PDF, Equivalent


Part Number

MMBD4448

Description

Surface Mount Schottky Barrier Switching Diode 350mW

Manufacture

Micro Commercial Components

Total Page 3 Pages
Datasheet
Download MMBD4448 Datasheet


MMBD4448
MCC
  omponents
21201 Itasca Street Chatsworth

  !"#
$ %    !"#
Features
l Fast Switching Speed
l Surface Mount Package Ideally Suited for Automatic Insertion
l For General Purpose Switching Applications
l High Conductance
Mechanical Data
l Case: SOT-23, Molded Plastic
l Terminals: Solderable per MIL-STD-202, Method 208
l Polarity: See Diagram
l Marking: KA3
MMBD4448
Surface Mount
Schottky Barrier
Switching Diode
350mW
SOT-23
A
D
Maximum Ratings @ 25oC Unless Otherwise Specified
Characteristic
Non-Repetitive Peak Reverse Volt.
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current(Note1)
Symbol
VRM
VRRM
VRWM
VR
VR(RMS)
IFM
Value
100
75
53
500
Unit
V
V
V
mA
Average Rectified Output Current
Non-Repetitive Peak @ t<=1.0s
Io
IFSM
250 mA
2A
Forward Surge Current @ t=1.0us
4A
Power Dissipation(Note 1)
Pd 350 mW
Thermal Resistance(Note 1)
Operation/Storage Temp. Range
R
Tj, TSTG
357
-55 to +150
K/W
oC
Electrical Characteristics @ 25oC Unless Otherwise Specified
Charateristic
Maximum Forward
Voltage Drop
Maximum Peak
Reverse Current
Junction Capacitance
Reverse Recovery Time
Symbol Min
0.62
VFM -----
IR M -----
Cj -----
trr -----
Max
0.72
0.855
1
1.25
2.5
50
30
25
4
4
Unit Test Cond.
IF=5.0mA
V IF=10mA
IF=100mA
IF=150mA
uA VR=75V
uA VR=75V Tj=150o C
uA VR=25V Tj=150o C
nA VR=20V
pF VR=0V, f=1.0MHz
ns
FE
CB
G HJ
DIMENSIONS
INCHES
DIM MIN
MAX
A .110 .120
B .083 .098
C .047 .055
D .035 .041
E .070 .081
F .018 .024
G
.0005
.0039
H .035 .044
J .003 .007
K .015 .020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
Note: 1. Valid provided that terminals are kept at ambient temperature
2. Trr Test Condition: IF=IR=10mA, Irr=0.1*IR, R=100 OHM
www.mccsemi.com

MMBD4448
MMBD4448
Figure 1
Typical Forward Characteristics
200
100
60
40
20
MilliAmps 10
6
4
2
25°C
1
.6
.4
.2
.1
.4
.6 .8
1.0 1.2 1.4
Volts
Instantaneous Forward Current - Amperesversus
Instantaneous Forward Voltage - Volts
MCC
Figure 2
Forward Derating Curve
420
350
280
210
MilliWatts
140
70
Single Phase, Half Wave
60Hz Resistive or Inductive Load
0
0
50 75 100 125 150 175
°C
Admissable Power Dissipation - MilliWattsversus
Ambient Temperature -°C
Figure 3
Junction Capacitance
10
6
4
2
pF
1
.6
.4
.2
.1
.1
.2
.4
TJ=25°C
12
Volts
4
10 20 40
Junction Capacitance - pFversus
Reverse Voltage - Volts
100 200 400
1000
www.mccsemi.com


Features MCC Features l l l l Fast Switching Spee d   omponents 21201 It asca Street Chatsworth     !"# $ %    !"# MMBD4448 Surface Mount Package Ideal ly Suited for Automatic Insertion For G eneral Purpose Switching Applications H igh Conductance Surface Mount Schottky Barrier Switching Diode 350mW Mechani cal Data l Case: SOT-23, Molded Plastic l Terminals: Solderable per MIL-STD-20 2, Method 208 l Polarity: See Diagram l Marking: KA3 A D SOT-23 Maximum Rati ngs @ 25oC Unless Otherwise Specified C haracteristic Non-Repetitive Peak Rever se Volt. Peak Repetitive Reverse Voltag e Working Peak Reverse Voltage DC Block ing Voltage RMS Reverse Voltage Forward Continuous Current(Note1) Average Rect ified Output Current Non-Repetitive Pea k @ t<=1.0s Forward Surge Current @ t=1 .0us Power Dissipation(Note 1) Thermal Resistance(Note 1) Operation/Storage Te mp. Range Pd R Tj, TSTG Symbol VRM VRRM VRWM VR VR(RMS) IFM Io IFSM 53 500 250 2 4 350 357 -55 to +150.
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