MMBD452LT1 SWITCHING DIODES Datasheet

MMBD452LT1 Datasheet, PDF, Equivalent


Part Number

MMBD452LT1

Description

DUAL HOT-CARRIER DETECTOR AND SWITCHING DIODES

Manufacture

ON

Total Page 3 Pages
Datasheet
Download MMBD452LT1 Datasheet


MMBD452LT1
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MMBD452LT1
Preferred Device
Dual Hot−Carrier Diodes
Schottky Barrier Diodes
These devices are designed primarily for high−efficiency UHF and
VHF detector applications. They are readily adaptable to many other
fast switching RF and digital applications. They are supplied in an
inexpensive plastic package for low−cost, high−volume consumer
and industrial/commercial requirements.
Features
Extremely Low Minority Carrier Lifetime
Very Low Capacitance
Low Reverse Leakage
Pb−Free Package is Available
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating
Symbol Value
Unit
Reverse Voltage
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
VR 30 V
PF
225 mW
1.8 mW/°C
Operating Junction Temperature Range
TJ −55 to +125 °C
Storage Temperature Range
Tstg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal
operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may
be affected.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
(EACH DIODE)
Characteristic
Reverse Breakdown Voltage
(IR = 10 mA)
Symbol Min Typ Max
V(BR)R 30 −
Unit
V
Total Capacitance
(VR = 15 V, f = 1.0 MHz) Figure 1
CT
− 0.9 1.5 pF
Reverse Leakage
(VR = 25 V) Figure 3
IR − 13 200 nAdc
Forward Voltage
(IF = 1.0 mAdc) Figure 4
VF − 0.38 0.45 Vdc
Forward Voltage
(IF = 10 mAdc) Figure 4
VF − 0.52 0.6 Vdc
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 3
1
http://onsemi.com
30 VOLTS
DUAL HOT−CARRIER
DETECTOR AND SWITCHING
DIODES
1
ANODE
2
CATHODE
3
CATHODE/ANODE
1
2
3
SOT−23 (TO−236)
CASE 318
STYLE 11
MARKING DIAGRAM
5N M G
G
1
5N = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
MMBD452LT1
SOT−23 3,000 / Tape & Reel
MMBD452LT1G SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MMBD452LT1/D

MMBD452LT1
MMBD452LT1
TYPICAL ELECTRICAL CHARACTERISTICS
2.8
f = 1.0 MHz
2.4
2.0
1.6
1.2
0.8
0.4
0
0 3.0 6.0 9.0 12 15 18 21 24 27 30
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Total Capacitance
500
400
KRAKAUER METHOD
300
200
100
0
0 10 20 30 40 50 60 70 80 90 100
IF, FORWARD CURRENT (mA)
Figure 2. Minority Carrier Lifetime
10
1.0
0.1
0.01
0.001
0
TA = 100°C
75°C
25°C
6.0 12 18 24
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Reverse Leakage
100
10
TA = 85°C
TA = −40°C
1.0
TA = 25°C
0.1
30 0.2
0.4 0.6 0.8 1.0
VF, FORWARD VOLTAGE (VOLTS)
Figure 4. Forward Voltage
1.2
SINUSOIDAL
GENERATOR
IF(PEAK)
CAPACITIVE
CONDUCTION
IR(PEAK)
FORWARD
CONDUCTION
STORAGE
CONDUCTION
BALLAST
NETWORK
(PADS)
PADS
DUT
SAMPLING
OSCILLOSCOPE
(50 W INPUT)
Figure 5. Krakauer Method of Measuring Lifetime
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2


Features www.DataSheet4U.com MMBD452LT1 Preferre d Device Dual Hot−Carrier Diodes Sch ottky Barrier Diodes These devices are designed primarily for high−efficienc y UHF and VHF detector applications. Th ey are readily adaptable to many other fast switching RF and digital applicati ons. They are supplied in an inexpensiv e plastic package for low−cost, high volume consumer and industrial/commer cial requirements. Features http://ons emi.com • • • • Extremely Low Minority Carrier Lifetime Very Low Cap acitance Low Reverse Leakage Pb−Free Package is Available 30 VOLTS DUAL HOT −CARRIER DETECTOR AND SWITCHING DIODE S 1 ANODE 2 CATHODE 3 CATHODE/ANODE MA XIMUM RATINGS (TJ = 125°C unless other wise noted) Rating Reverse Voltage Forw ard Power Dissipation @ TA = 25°C Dera te above 25°C Operating Junction Tempe rature Range Storage Temperature Range Symbol VR PF 225 1.8 TJ Tstg −55 to + 125 −55 to +150 mW mW/°C °C °C 1 V alue 30 Unit V 3 2 SOT−23 (TO−236) CASE 318 STYLE 11 Maximum ratings are those values bey.
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