MMBD452LT1

www.DataSheet4U.com MMBD452LT1 Preferred Device Dual Hot−Carrier Diodes Schottky Barrier Diodes These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low−cost, high−volume consumer and industrial/commercial requirements. Features http://onsemi.com Extremely Low Minority Carrier Lifetime Very Low Capacitance Low Reverse Leakage Pb−Free Package is Available 30 VOLTS DUAL HOT−CARRIER DETECTOR AND SWITCHING DIODES 1 ANODE 2 CATHODE 3 CATHODE/ANODE MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) Rating Reverse Voltage Forward Power Dissipation @ TA = 25°C Derate above 25°C Operating Junction Temperature Range Storage Temperature Range Symbol VR PF 225 1.8 TJ Tstg −55 to +125 −55 to +150 mW mW/°C °C °C 1 Value 30 Unit V 3 2 SOT−23 (TO−236) CASE 318 STYLE 11 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. MARKING DIAGRAM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Reverse Breakdown Voltage (IR = 10 mA) Total Capacitance (VR = 15 V, f = 1.0 MHz) Figure 1 R...