MMBD6100 Switching Diode Datasheet

MMBD6100 Datasheet, PDF, Equivalent


Part Number

MMBD6100

Description

Monolithic Dual Switching Diode

Manufacture

Micro Commercial Components

Total Page 2 Pages
Datasheet
Download MMBD6100 Datasheet


MMBD6100
MCC
  omponents
21201 Itasca Street Chatsworth

  !"#
$ %    !"#
MMBD6100
)HDWXUHV
Low Current Leakage
SOT-23 Package For Surface Mount Application
Capable of 225Watts of Power Dissipation
C
Monolithic Dual
Switching Diode
5BM
AA
0D[LPXP5DWLQJV
Operating Temperature: -55OC to +150OC
Storage Temperature: -55OC to +150OC
Maximum Thermal Resistance; 556OC/W Junction To Ambient
(OHFWULFDO &KDUDFWHULVWLFV #  & 8QOHVV 2WKHUZLVH 6SHFLILHG
Reverse Voltage
Minimum Reverse
Breakdown Voltage
VR
VBR
70V
70V IBR=100A
Forward Current
Power Dissipation
FR-5 Board(1)
Power Dissipation
Alumina Substrate(2)
IF
PTOT
PTOT
200mA
225mW
1.8mW/OC
300mW
2.4mW/OC
TA=25OC
Derate above
25OC
TA=25OC
Derate above
25OC
Peak Forward Surge
Current
IFSM
500mA
8.3ms, half
sine
Junction
Temperature
TJ 150OC
Forward Voltage
Maximum Reverse
Voltage Leakage
Current
VF
0.55~0.7V IF=1.0mA
0.85~1.1V IF=100mA
IR
0.1A
VR=50V
TA=25OC,
Maximum Junction
Capacitance
CJ
2.5pF
Measured at
VR=0V
Maximum Reverse
Recovery Time
Trr
4.0nS
IF=IR=10mA
IR (RCE)=1.0mA
1) FR-5=1.0 × 0.75 × 0.062 in.
& Alumina=0.4 × 0.3 × 0.024 in. 99.5 alumina.
SOT-23
A
D
CB
FE
G HJ
K
DIMENSIONS
INCHES
DIM MIN
MAX
A .110 .120
B .083 .098
C .047 .055
D .035 .041
E .070 .081
F .018 .024
G
.0005
.0039
H .035 .044
J .003 .007
K .015 .020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
Suggested Solder
Pad Layout
.031
.800
NOTE
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
www.mccsemi.com

MMBD6100
MMBD6100
+10 V
820
2.0 k
100 µH
0.1 µF
IF
50 OUTPUT
PULSE
GENERATOR
DUT
0.1 µF
tr tp
10%
t
50 INPUT
SAMPLING
OSCILLOSCOPE
VR
90%
INPUT SIGNAL
MCC
IF
trr t
iR(REC) = 1.0 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
100
10
1.0
0.1
0.2
Notes: 1. A 2.0 kvariable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
10
TA = 150°C
TA = 85°C
TA = –40°C
1.0
TA = 125°C
TA = 25°C
0.4 0.6 0.8 1.0
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
0.1
0.01
0.001
1.2 0
TA = 85°C
TA = 55°C
TA = 25°C
10 20 30 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
50
1.0
0.9
0.8
0.7
0.6
02
46
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
8
www.mccsemi.com


Features MCC )HDWXUHV • • •    omponents 21201 Itasca Street Chat sworth    !"# $ %    !"# MMBD6100 Low Current Leakage SOT-23 Package For Surf ace Mount Application Capable of 225Wat ts of Power Dissipation C Monolithic D ual Switching Diode 5BM A A SOT-23 A D 0D[LPXP5DWLQJV • • • Operat ing Temperature: -55OC to +150OC Storag e Temperature: -55OC to +150OC Maximum Thermal Resistance; 556OC/W Junction To Ambient C B F E (OHFWULFDO &KDUDF WHULVWLFV #  & 8QOHVV 2WKHUZLVH 6SHFL ILHG Reverse Voltage Minimum Reverse Br eakdown Voltage Forward Current Power D issipation FR-5 Board(1) Power Dissipat ion Alumina Substrate(2) Peak Forward S urge Current Junction Temperature Forwa rd Voltage VR VBR IF PTOT 70V 70V 200mA 225mW 1.8mW/OC 300mW 2.4mW/OC 500mA 15 0OC 0.55~0.7V 0.85~1.1V IF=1.0mA IF=100 mA VR=50V TA=25OC, Measured at VR=0V IF =IR=10mA IR (RCE)=1.0mA .037 .950 .037 .950 .035 .900 .079 2.000 inches mm IBR=100A TA=25 C Derate above 25OC TA.
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