Switching Diodes. MMBD6100LT1 Datasheet


MMBD6100LT1 Diodes. Datasheet pdf. Equivalent


Part Number

MMBD6100LT1

Description

Monolithic Dual Switching Diodes

Manufacture

Motorola

Total Page 4 Pages
Datasheet
Download MMBD6100LT1 Datasheet


MMBD6100LT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Monolithic Dual Switching Diode
Order this document
by MMBD6100LT1/D
MMBD6100LT1
3
CATHODE
ANODE
1
2
ANODE
MAXIMUM RATINGS (EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBD6100LT1 = 5BM
Symbol
VR
IF
IFM(surge)
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Value
70
200
500
Max
225
1.8
556
300
2.4
417
– 55 to +150
Unit
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100 µAdc)
V(BR)
Reverse Voltage Leakage Current
(VR = 50 Vdc)
IR
Forward Voltage
(IF = 1.0 mAdc)
(IF = 100 mAdc)
VF
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1)
trr
Capacitance
(VR = 0 V)
 1. FR– 5 = 1.0 0.75 0.062 in.
 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
C
3
1
2
CASE 318 – 08, STYLE 9
SOT– 23 (TO – 236AB)
Min Max Unit
70 — Vdc
— 0.1 µAdc
Vdc
0.55 0.7
0.85 1.1
— 4.0 ns
— 2.5 pF
Thermal Clad is a trademark of the Bergquist Company
©MMotootorroollaa,
Small–Signal
Inc. 1997
Transistors,
FETs
and
Diodes
Device
Data
1

MMBD6100LT1
MMBD6100LT1
820
+10 V
2.0 k
100 µH
0.1 µF
IF
50 OUTPUT
PULSE
GENERATOR
DUT
0.1 µF
tr tp
10%
t
50 INPUT
SAMPLING
OSCILLOSCOPE
VR
90%
INPUT SIGNAL
IF
trr t
iR(REC) = 1.0 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kvariable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
CURVES APPLICABLE TO EACH CATHODE
100
TA = 85°C
10
TA = –40°C
TA = 25°C
1.0
0.1
0.2
0.4 0.6 0.8 1.0
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
1.0
0.9
1.2
10
1.0
0.1
0.01
0.001
0
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
TA = 25°C
10 20 30 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
50
0.8
0.7
0.6
02
46
VR, REVERSE VOLTAGE (VOLTS)
8
Figure 4. Capacitance
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBD6100LT1/D M onolithic Dual Switching Diode ANODE 1 2 ANODE MMBD6100LT1 3 CATHODE 3 1 M AXIMUM RATINGS (EACH DIODE) Rating Reve rse Voltage Forward Current Peak Forwar d Surge Current Symbol VR IF IFM(surge) Value 70 200 500 Unit Vdc mAdc mAdc 2 CASE 318 – 08, STYLE 9 SOT– 23 (T O – 236AB) THERMAL CHARACTERISTICS C haracteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate abov e 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumi na Substrate,(2) TA = 25°C Derate abov e 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperatu re Symbol PD Max 225 1.8 RqJA PD 556 30 0 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W ° C DEVICE MARKING MMBD6100LT1 = 5BM EL ECTRICAL CHARACTERISTICS (TA = 25°C un less otherwise noted) (EACH DIODE) Char acteristic Symbol Min Max Unit OFF CHA RACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 µAdc) Reverse Voltage Leakage C.
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