Document
MMBD6100LT1 Monolithic Dual Switching Diode
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MAXIMUM RATINGS (EACH DIODE)
Symbol VR IF IFM(surge) Reverse Voltage Forward Current Peak Forward Surge Current Rating Value 70 200 500 Unit Vdc mAdc mAdc PLASTIC SOT–23S CASE 318
1 2 3
THERMAL CHARACTERISTICS
Symbol PD Characteristic Total Device Dissipation, FR–5 Board TA = 25°C Derate above 25°C
(1)
Max 225 1.8 556 300 2.4 417 –55 to +150
Unit mW mW/°C °C/W mW mW/°C °C/W °C
RqJA PD
Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Range
DEVICE MARKING
5BM
RqJA TJ, Tstg
(1) FR– 5 = 1.0 0.75 (2) Alumina = 0.4 0.3
0.062 in. 0.024 in. 99.5% alumina.
3 CATHODE
ANODE 1 2 ANODE
ORDERING INFORMATION
Device MMBD6100LT1 MMBD6100LT3 Package SOT–23S SOT–23S Shipping 3000/Tape & Reel 10,000/Tape & Reel
© Semiconductor Components Industries, LLC, 2000
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April, 2000 – Rev. 1
Publication Order Number: MMBD6100LT1/D
MMBD6100LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 µAdc) Reverse Voltage Leakage Current (VR = 50 Vdc) Forward Voltage (IF = 1.0 mAdc) (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) Capacitance (VR = 0 V) V(BR) IR VF 0.55 0.8 trr C — — 0.7 1.1 4.0 2.5 ns pF 70 — — 0.1 Vdc µAdc Vdc
820 Ω +10 V 2.0 k 100 µH 0.1 µF DUT 50 Ω OUTPUT PULSE GENERATOR 50 Ω INPUT SAMPLING OSCILLOSCOPE VR INPUT SIGNAL 90% IR iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) IF 0.1 µF tr 10% tp t IF trr t
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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MMBD6100LT1
CURVES APPLICABLE TO EACH CATHODE
100 I F, FORWARD CURRENT (mA) TA = 85°C 10 TA = 25°C 1.0
10
TA = 150°C TA = 125°C
TA = –40°C
I R , REVERSE CURRENT (m A)
1.0
0.1
TA = 85°C TA = 55°C
0.01 TA = 25°C
0.1 0.2 0.4 0.6 0.8 1.0 1.2 VF, FORWARD VOLTAGE (VOLTS)
0.001
0
10
20
30
40
50
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Forward Voltage
Figure 3. Leakage Current
1.0 CD, DIODE CAPACITANCE (pF)
0.9
0.8
0.7
0.6
0
2
4
6
8
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
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MMBD6100LT1 INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection
0.037 0.95
interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.
0.037 0.95
0.079 2.0 0.035 0.9 0.031 0.8
inches mm
SOT–23 SOT–23 POWER DISSIPATION The power dissipation of the SOT–23 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT–23 package, PD can be calculated as follows:
PD = TJ(max) – TA RθJA
SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
The values for the equation are foun.