MMBD6100LT3 Switching Diode Datasheet

MMBD6100LT3 Datasheet, PDF, Equivalent


Part Number

MMBD6100LT3

Description

Monolithic Dual Switching Diode

Manufacture

ON

Total Page 8 Pages
Datasheet
Download MMBD6100LT3 Datasheet


MMBD6100LT3
MMBD6100LT1
Monolithic Dual
Switching Diode
MAXIMUM RATINGS (EACH DIODE)
Symbol
Rating
VR
IF
IFM(surge)
Reverse Voltage
Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Symbol
Characteristic
PD Total Device Dissipation, FR–5 Board (1)
TA = 25°C
Derate above 25°C
RqJA
PD
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
RqJA
Thermal Resistance, Junction to Ambient
TJ, Tstg Junction and Storage
Temperature Range
 (1) FR– 5 = 1.0 0.75 0.062 in.
 (2) Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Value
70
200
500
Unit
Vdc
mAdc
mAdc
Max Unit
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4
417
–55 to
+150
mW/°C
°C/W
°C
http://onsemi.com
3
1
2
PLASTIC
SOT–23S
CASE 318
DEVICE MARKING
5BM
3
CATHODE
ANODE
1
2
ANODE
ORDERING INFORMATION
Device
Package
Shipping
MMBD6100LT1 SOT–23S 3000/Tape & Reel
MMBD6100LT3 SOT–23S 10,000/Tape & Reel
© Semiconductor Components Industries, LLC, 2000
April, 2000 – Rev. 1
1
Publication Order Number:
MMBD6100LT1/D

MMBD6100LT3
MMBD6100LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100 µAdc)
V(BR)
Reverse Voltage Leakage Current
(VR = 50 Vdc)
IR
Forward Voltage
(IF = 1.0 mAdc)
(IF = 100 mAdc)
VF
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1)
trr
Capacitance
(VR = 0 V)
C
Min
70
0.55
0.8
Max Unit
— Vdc
0.1 µAdc
Vdc
0.7
1.1
4.0 ns
2.5 pF
+10 V
820
2.0 k
100 µH
0.1 µF
IF
50 OUTPUT
PULSE
GENERATOR
DUT
0.1 µF
tr tp
10%
t
50 INPUT
SAMPLING
OSCILLOSCOPE
VR
90%
INPUT SIGNAL
IF
trr t
iR(REC) = 1.0 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kvariable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
http://onsemi.com
2


Features MMBD6100LT1 Monolithic Dual Switching Di ode http://onsemi.com MAXIMUM RATINGS (EACH DIODE) Symbol VR IF IFM(surge) Re verse Voltage Forward Current Peak Forw ard Surge Current Rating Value 70 200 5 00 Unit Vdc mAdc mAdc PLASTIC SOT–23S CASE 318 1 2 3 THERMAL CHARACTERISTIC S Symbol PD Characteristic Total Device Dissipation, FR–5 Board TA = 25°C D erate above 25°C (1) Max 225 1.8 556 300 2.4 417 –55 to +150 Unit mW mW/ C °C/W mW mW/°C °C/W °C RqJA PD Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Subst rate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambien t Junction and Storage Temperature Rang e DEVICE MARKING 5BM RqJA TJ, Tstg (1) FR– 5 = 1.0 0.75 (2) Alumina = 0. 4 0.3   0.062 in.   0.024 in. 99. 5% alumina. 3 CATHODE ANODE 1 2 ANODE ORDERING INFORMATION Device MMBD6100L T1 MMBD6100LT3 Package SOT–23S SOT– 23S Shipping 3000/Tape & Reel 10,000/Ta pe & Reel © Semiconductor Components Industries, LLC, 2000 1 April, 2000 – Rev. 1.
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