MMBD7000 Fast Diode Datasheet

MMBD7000 Datasheet, PDF, Equivalent


Part Number

MMBD7000

Description

High Conductance Ultra Fast Diode

Manufacture

Fairchild

Total Page 2 Pages
Datasheet
Download MMBD7000 Datasheet


MMBD7000
Discrete POWER & Signal
Technologies
MMBD7000
3
SOT-23
2
1
3
5C
12
CONNECTION DIAGRAM
3
12
High Conductance Ultra Fast Diode
Sourced from Process 1P. See MMBD1201-1205 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
WIV Working Inverse Voltage
IO Average Rectified Current
70
200
IF
if
if(surge)
Tstg
TJ
DC Forward Current
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
600
700
1.0
2.0
-55 to +150
150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES :
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
mA
mA
mA
A
A
°C
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
PD Total Device Dissipation
Derate above 25°C
RθJA Thermal Resistance, Junction to Ambient
MMBD7000*
350
2.8
357
*Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2
Units
mW
mW/°C
°C/W
©1997 Fairchild Semiconductor Corporation

MMBD7000
High Conductance Ultra Fast Diode
(continued)
Electrical Characteristics
Symbol
BV
IR
Parameter
Breakdown Voltage
Reverse Current
VF Forward Voltage
CO Diode Capacitance
TRR Reverse Recovery Time
TA = 25°C unless otherwise noted
Test Conditions
IR = 100 µA
VR = 100 V
VR = 50 V
VR = 50 V, TA = 125°C
IF = 1.0 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
VR = 0, f = 1.0 MHz
IF = 10 mA, IRR = 1.0 mA,
RL = 100
Min
100
550
670
0.75
Max
500
300
100
700
820
1.1
1.25
1.5
4.0
Units
V
nA
nA
µA
mV
mV
V
V
pF
nS


Features MMBD7000 Discrete POWER & Signal Techno logies MMBD7000 CONNECTION DIAGRAM 3 3 3 5C 2 1 2 SOT-23 1 2 1 High Co nductance Ultra Fast Diode Sourced from Process 1P. See MMBD1201-1205 for char acteristics. Absolute Maximum Ratings* Symbol W IV IO IF if if(surge) Working Inverse Voltage Average Rectified Curr ent DC Forward Current Recurrent Peak F orward Current TA = 25°C unless other wise noted Parameter Value 70 200 600 700 1.0 2.0 -55 to +150 150 Units V m A mA mA A A °C °C Tstg TJ Peak Forw ard Surge Current Pulse width = 1.0 sec ond Pulse width = 1.0 microsecond Stora ge Temperature Range Operating Junction Temperature *These ratings are limiti ng values above which the serviceabilit y of any semiconductor device may be im paired. NOTES : 1) These ratings are ba sed on a maximum junction temperature o f 150 degrees C. 2) These are steady st ate limits. The factory should be consu lted on applications involving pulsed o r low duty cycle operations. Thermal Characteristics Symbol PD Rθ.
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