Switching Diode. MMBD7000LT1 Datasheet


MMBD7000LT1 Diode. Datasheet pdf. Equivalent


Part Number

MMBD7000LT1

Description

Dual Switching Diode

Manufacture

ON

Total Page 4 Pages
Datasheet
Download MMBD7000LT1 Datasheet


MMBD7000LT1
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MMBD7000LT1
Preferred Device
Dual Switching Diode
Features
Pb−Free Packages are Available
http://onsemi.com
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
Value
Unit
Reverse Voltage
VR 100 Vdc
Forward Current
IF 200 mAdc
Peak Forward Surge Current
IFM(surge)
500
mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board
(Note 1)TA = 25°C
Derate above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance, Junction to
Ambient
RqJA
556 °C/W
Total Device Dissipation
Alumina Substrate, (Note 2)
TA = 25°C
Derate above 25°C
PD 300 mW
2.4 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
−55 to +150
°C
1
ANODE
3
CATHODE/ANODE
2
CATHODE
3
1
2
SOT−23 (TO−236AB)
CASE 318−08
STYLE 8
MARKING DIAGRAM
M5C M
1
M5C
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
MMBD7000LT1 SOT−23 3000 Tape & Reel
MMBD7000LT1G SOT−23 3000 Tape & Reel
(Pb−Free)
MMBD7000LT3 SOT−23 10,000 Tape & Reel
MMBD7000LT3G SOT−23 10,000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2005
April, 2005 − Rev. 3
1
Publication Order Number:
MMBD7000LT1/D

MMBD7000LT1
MMBD7000LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100 mAdc)
Reverse Voltage Leakage Current
(VR = 50 Vdc)
(VR = 100 Vdc)
(VR = 50 Vdc, 125°C)
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 100 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc) (Figure 1)
V(BR)
IR
IR2
IR3
VF
trr
Capacitance (VR = 0 V)
C
Min Max Unit
100 − Vdc
mAdc
− 1.0
− 3.0
− 100
Vdc
0.55 0.7
0.67 0.82
0.75 1.1
− 4.0 ns
− 1.5 pF
+10 V
820 W
2.0 k
100 mH
0.1 mF
IF
50 W OUTPUT
PULSE
GENERATOR
DUT
0.1 mF
tr tp
10%
t
50 W INPUT
SAMPLING
OSCILLOSCOPE
VR
90%
INPUT SIGNAL
IF
trr t
iR(REC) = 1.0 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
http://onsemi.com
2


Features www.DataSheet4U.com MMBD7000LT1 Preferr ed Device Dual Switching Diode Feature s • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS (EA CH DIODE) Rating Reverse Voltage Forwar d Current Peak Forward Surge Current Sy mbol VR IF IFM(surge) Value 100 200 500 Unit Vdc mAdc mAdc 1 ANODE 3 CATHODE /ANODE 2 CATHODE Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions ) and are not valid simultaneously. If these limits are exceeded, device funct ional operation is not implied, damage may occur and reliability may be affect ed. 3 1 2 SOT−23 (TO−236AB) CASE 318−08 STYLE 8 THERMAL CHARACTERISTI CS Characteristic Total Device Dissipat ion FR− 5 Board (Note 1)TA = 25°C De rate above 25°C Thermal Resistance, Ju nction to Ambient Total Device Dissipat ion Alumina Substrate, (Note 2) TA = 25 °C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Sto.
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