MMBD701 Barrier Diode Datasheet

MMBD701 Datasheet, PDF, Equivalent


Part Number

MMBD701

Description

Schottky Barrier Diode

Manufacture

Fairchild

Total Page 5 Pages
Datasheet
Download MMBD701 Datasheet


MMBD701
PACKAGE
SOT-23
TO-236AB (Low)
MMBD701
3
5HF
12
CONNECTION DIAGRAM
3
1 2 NC
PACKAGE
SOT-23
TO236AB
Schottky Barrier Diode
Sourced from Process GE
Absolute Maximum Ratings* TA = 25OC unless otherwise noted
Sym
Parameter
Value
Tstg Storage Temperature
TJ Operating Junction Temperature
Wiv Working Inverse Voltage
PF Forward Power Dissipation @ TA = 25OC
Derate above 25OC
-55 to +150
-55 to +125
35
200
2.0
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
Units
OC
OC
V
mW
Mw/OC
ADVANCED INFORMATION ONLY
NOT IN PRODUCTION
Electrical Characteristics TA = 25OC unless otherwise noted
SYM
CHARACTERISTICS
BV Breakdown Voltage
IR Reverse Leakage
VF Forward Voltage
CT Capacitance
MIN MAX UNITS
TEST CONDITIONS
70
200
500
1.0
1.0
V IR = 10 uA
nA VR = 35 V
mV IF = 1.0 mA
V IF = 10 mA
pF VR = 20 V
f = 1.0 MHz
© 1997 Fairchild Semiconductor Corporation

MMBD701
0.098 (2.489)
0.083 (2.108)
0.019 (0.483)
0.015 (0.381)
3
3 CHARACTERS MAX
0.055 (1.397)
0.047 (1.194)
0.040 (1.016)
0.035 (0.889)
12
0.080 (2.032)
0.070 (1.778)
0.120 (3.048)
0.110 (2.794)
0.024 (0.810)
0.018 (0.457)
LOW PROFILE 0.041 (1.041)
(49) 0.035 (0.889)
LOW PROFILE 0.0040 (0.102)
(49) 0.0005 (0.013)
0.0059 (0.150)
0.0035 (0.089)
SOT-23
TO-236AB (LOW PROFILE)
22-August-1994


Features MMBD701 3 CONNECTION DIAGRAM 3 PACKAGE SOT-23 TO-236AB (Low) 1 5HF 1 2 NC SO T-23 TO236AB 2 PACKAGE Schottky Barr ier Diode Sourced from Process GE Abso lute Maximum Ratings* Sym Tstg TJ Wiv P F TA = 25OC unless otherwise noted Pa rameter Storage Temperature Operating J unction Temperature Working Inverse Vol tage Forward Power Dissipation @ TA = 2 5OC Derate above 25OC Value -55 to +15 0 -55 to +125 35 200 2.0 Units OC OC V mW Mw/OC *These ratings are limiting values above which the serviceability of any semiconductor device may be impa ired ADVANCED INFORMATION ONLY NOT IN PRODUCTION Electrical Characteristics SYM TA = 25OC unless otherwise noted CHARACTERISTICS MIN 70 MAX UNITS V I R TEST CONDITIONS = 10 uA 35 V 1.0 mA 10 mA 20 V 1.0 MHz BV Breakdown Voltag e IR Reverse Leakage VF Forward Voltage CT Capacitance © 1997 Fairchild Semic onductor Corporation 200 500 1.0 1.0 nA mV V pF VR = IF = IF = VR = f = 0. 019 (0.483) 0.015 (0.381) 3 0.098 (2.489) 0.083 (2.108) 3 CHA.
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