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MMBD701LT1 Dataheets PDF



Part Number MMBD701LT1
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Description SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES
Datasheet MMBD701LT1 DatasheetMMBD701LT1 Datasheet (PDF)

www.DataSheet4U.com MBD701, MMBD701LT1 Preferred Device Silicon Hot−Carrier Diodes Schottky Barrier Diodes These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low−cost, high−volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. Features http://onsemi.com MARKING.

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www.DataSheet4U.com MBD701, MMBD701LT1 Preferred Device Silicon Hot−Carrier Diodes Schottky Barrier Diodes These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low−cost, high−volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. Features http://onsemi.com MARKING DIAGRAMS TO−92 2−Lead CASE 182 STYLE 1 1 2 2 CATHODE 1 ANODE • • • • • Extremely Low Minority Carrier Lifetime − 15 ps (Typ) Very Low Capacitance − 1.0 pF @ VR = 20 V High Reverse Voltage − to 70 V Low Reverse Leakage − 200 nA (Max) Pb−Free Packages are Available MBD 701 AYWW G G MAXIMUM RATINGS Rating Reverse Voltage Forward Power Dissipation MBD701 @ TA = 25°C MMBD701LT Derate above 25°C MBD701 MMBD701LT TJ Tstg Symbol VR PF 280 200 2.8 2.0 −55 to +125 −55 to +150 mW mW/°C °C °C Value 70 Unit V 1 2 3 SOT−23 (TO−236) CASE 318 STYLE 6 1 ANODE 5H M G G 1 3 CATHODE Operating Junction Temperature Range Storage Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. A = Assembly Location Y = Year WW = Work Week 5H = Device Code (SOT−23) M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 mAdc) Total Capacitance (VR = 20 V, f = 1.0 MHz) Figure 1 Reverse Leakage (VR = 35 V) Figure 3 Forward Voltage (IF = 1.0 mAdc) Figure 4 Forward Voltage (IF = 10 mAdc) Figure 4 Symbol V(BR)R CT IR VF VF Min 70 − − − − Typ − 0.5 9.0 0.42 0.7 Max − 1.0 200 0.5 1.0 Unit V pF ORDERING INFORMATION Device MBD701 MBD701G MMBD701LT1 Package TO−92 TO−92 (Pb−Free) SOT−23 Shipping† 1,000 Units / Box 1,000 Units / Box 3,000 / Tape & Reel nAdc Vdc Vdc MMBD701LT1G MMBD701LT3 MMBD701LT3G SOT−23 3,000 / Tape & Reel (Pb−Free) SOT−23 10,000/T ape & Reel SOT−23 10,000/T ape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 1 October, 2006 − Rev. 4 Publication Order Number: MBD701/D MBD701, MMBD701LT1 TYPICAL ELECTRICAL CHARACTERISTICS 2.0 C T, TOTAL CAPACITANCE (pF) 1.6 1.2 0.8 0.4 0 f = 1.0 MHz 500 t , MINORITY CARRIER LIFETIME (ps) 400 KRAKAUER METHOD 300 200 100 0 0 5.0 10 15 20 25 30 35 VR, REVERSE VOLTAGE (VOLTS) 40 45 50 0 10 20 30 40 50 60 70 IF, FORWARD CURRENT (mA) 80 90 100 Figure 1. Total Capacitance Figure 2. Minority Carrier Lifetime 10 TA = 100°C 100 IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE (m A) 1.0 10 TA = 85°C TA = −40°C 0.1 TA = 75°C 1.0 0.01 TA = 25°C TA = 25°C 0.001 0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 40 50 0.1 0 0.2 0.4 0.8 1.2 VF, FORWARD VOLTAGE (VOLTS) 1.6 2.0 Figure 3. Reverse Leakage Figure 4. Forward Voltage IF(PEAK) CAPACITIVE CONDUCTION IR(PEAK) FORWARD CONDUCTION STORAGE CONDUCTION SINUSOIDAL GENERATOR BALLAST NETWORK (PADS) PADS DUT SAMPLING OSCILLOSCOPE (50 W INPUT) Figure 5. Krakauer Method of Measuring Lifetime http://onsemi.com 2 MBD701, MMBD701LT1 PACKAGE DIMENSIONS TO−92 (TO−226AC) CASE 182−06 ISSUE L A B SEATING PLANE R L K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND ZONE R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. P ÉÉ ÉÉ C D J X X D G H V SECTION X−X DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.050 BSC 0.100 BSC 0.014 0.016 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.050 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.21 4.32 5.33 3.18 4.19 0.407 0.533 1.27 BSC 2.54 BSC 0.36 0.41 12.70 −−− 6.35 −−− 2.03 2.66 −−− 1.27 2.93 −−− 3.43 −−− STYLE 1: PIN 1. ANODE 2. CATHODE 1 2 N N http://onsemi.com 3 MBD701, MMBD701LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN D 3 SEE VIEW C E 1 2 HE c b e q 0.25 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.


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