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MMBD717LT1 Barrier Diodes Datasheet |
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| Part Number | MMBD717LT1 |
| Description | Common Anode Schottky Barrier Diodes |
| Manufacture | Motorola |
| Total Page | 4 Pages |
| Datasheet |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBD717LT1/D
Common Anode
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching applications,
circuit protection, and voltage clamping. Extremely low forward voltage reduces
conduction loss. Miniature surface mount package is excellent for hand held and
portable applications where space is limited.
• Extremely Fast Switching Speed
• Extremely Low Forward Voltage — 0.28 Volts (Typ) @ IF = 1 mAdc
MMBD717LT1
Motorola Preferred Device
20 VOLT
SCHOTTKY BARRIER
DETECTOR AND SWITCHING
DIODES
ANODE
3
CATHODE
1
2
CATHODE
3
1
2
CASE 419 – 02, STYLE 2
SOT– 323 (SC – 70)
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating
Symbol
Reverse Voltage
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
VR
PF
Operating Junction
Temperature Range
TJ
Storage Temperature Range
DEVICE MARKING
Tstg
MMBD717LT1 = B3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Reverse Breakdown Voltage
(IR = 10 µA)
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
Reverse Leakage
(VR = 10 V)
Forward Voltage
(IF = 1.0 mAdc)
V(BR)R
CT
IR
VF
Value
20
200
1.6
– 55 to +150
– 55 to +150
Min Typ
20 —
— 2.0
— 0.05
— 0.28
Unit
Volts
mW
mW/°C
°C
°C
Max Unit
— Volts
2.5 pF
1.0 µAdc
0.37 Vdc
Preferred devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a registered trademark of the Bergquist Company.
REV 3
©MMoottoororloal,aInSc.m19a9l7l–Signal Transistors, FETs and Diodes Device Data
5–1
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MMBD717LT1
+10 V
820 Ω
2k
100 µH
0.1 µF
IF
0.1 µF
tr tp
10%
t
IF
trr t
50 Ω OUTPUT
PULSE
GENERATOR
DUT
50 Ω INPUT
90%
SAMPLING
OSCILLOSCOPE
VR
INPUT SIGNAL
iR(REC) = 1 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
10
1.0
1 50°C
1 25°C
85°C 25°C – 40°C – 55°C
0.1
0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Typical Forward Voltage
100
TA = 150°C
10 125°C
1.0
85°C
0.1
0.01
25°C
0.001
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Reverse Current versus Reverse
Voltage
3.0
2.5
2.0
1.5
1.0
0.5
0
0 2.0 4.0 6.0 8.0 10 12 14 16 18
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Typical Capacitance
5–2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
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| Features | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBD717LT1/D Co mmon Anode Schottky Barrier Diodes Thes e Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clampin g. Extremely low forward voltage reduce s conduction loss. Miniature surface mo unt package is excellent for hand held and portable applications where space i s limited. • Extremely Fast Switching Speed • Extremely Low Forward Voltag e — 0.28 Volts (Typ) @ IF = 1 mAdc M MBD717LT1 Motorola Preferred Device 20 VOLT SCHOTTKY BARRIER DETECTOR AND SWI TCHING DIODES 3 ANODE 3 CATHODE 1 2 CATHODE 1 2 CASE 419 – 02, STYLE 2 SOT– 323 (SC – 70) MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) R ating Reverse Voltage Forward Power Dis sipation @ TA = 25°C Derate above 25° C Operating Junction Temperature Range Storage Temperature Range Symbol VR PF 200 1.6 TJ – 55 to +150 Tstg – 55 t o +150 °C mW mW/°C °C Value 20 Unit Volts DEVICE MARKING MMBD717LT1 = B3 ELECTRI. |
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