MMBD717LT1 Barrier Diodes Datasheet

MMBD717LT1 Datasheet, PDF, Equivalent


Part Number

MMBD717LT1

Description

Common Anode Schottky Barrier Diodes

Manufacture

ON

Total Page 3 Pages
Datasheet
Download MMBD717LT1 Datasheet


MMBD717LT1
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MMBD717LT1
Preferred Device
Common Anode
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
Extremely Fast Switching Speed
Extremely Low Forward Voltage − 0.28 V (Typ) @ IF = 1 mAdc
Pb−Free Package is Available
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
VR 20 V
PF
200 mW
1.6 mW/°C
Operating Junction Temperature Range TJ −55 to +150 °C
Storage Temperature Range
Tstg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
ELECTRICAL CHARACTERISTICS (TA = 125°C unless otherwise noted)
Rating
Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(IR = 10 mA)
V(BR)R 20 −
V
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
CT − 2.0 2.5 PF
Reverse Leakage (VR = 10 V)
(For each individual diode while
the second diode is unbiased)
IR − 0.05 1.0 mAdc
Forward Voltage (IF = 1.0 mAdc)
VF − 0.28 0.37 Vdc
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 7
1
http://onsemi.com
20 VOLT
SCHOTTKY BARRIER
DETECTOR AND SWITCHING
DIODES
ANODE
3
CATHODE
1
2
CATHODE
1
SC−70 / SOT−323
CASE 419
STYLE 4
MARKING DIAGRAM
B3 M G
G
1
B3 = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
MMBD717LT1
SC−70 3,000 / Tape & Reel
MMBD717LT1G SC−70 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MMBD717LT1/D

MMBD717LT1
MMBD717LT1
+10 V
820 W
2k
100 mH
0.1 mF
IF
50 W OUTPUT
PULSE
GENERATOR
DUT
0.1 mF
tr tp
10%
t
50 W INPUT
SAMPLING
OSCILLOSCOPE
VR
90%
INPUT SIGNAL
IF
trr t
iR(REC) = 1 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
NOTES: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
10
1.0
150 °C
125 °C 85°C 25°C −40 °C −55 °C
0.1
0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Typical Forward Voltage
100
TA = 150°C
10 125°C
1.0
85°C
0.1
0.01
25°C
0.001
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Reverse Current versus Reverse Voltage
3.0
2.5
2.0
1.5
1.0
0.5
0
0 2.0 4.0 6.0 8.0 10 12 14 16 18
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Typical Capacitance
http://onsemi.com
2


Features www.DataSheet4U.com MMBD717LT1 Preferre d Device Common Anode Schottky Barrier Diodes These Schottky barrier diodes a re designed for high speed switching ap plications, circuit protection, and vol tage clamping. Extremely low forward vo ltage reduces conduction loss. Miniatur e surface mount package is excellent fo r hand held and portable applications w here space is limited. Features http:// onsemi.com • Extremely Fast Switchin g Speed • Extremely Low Forward Volta ge − 0.28 V (Typ) @ IF = 1 mAdc • P b−Free Package is Available MAXIMUM R ATINGS (TJ = 125°C unless otherwise no ted) Rating Reverse Voltage Forward Pow er Dissipation @ TA = 25°C Derate abov e 25°C Operating Junction Temperature Range Storage Temperature Range Symbol VR PF 200 1.6 TJ Tstg −55 to +150 − 55 to +150 mW mW/°C °C °C Value 20 U nit V 20 VOLT SCHOTTKY BARRIER DETECTO R AND SWITCHING DIODES ANODE 3 CATHODE 1 2 CATHODE 1 Maximum ratings are tho se values beyond which device damage can occur. Maximum ratings applied to the devi.
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