MMBD914 Epitaxial Diode Datasheet

MMBD914 Datasheet, PDF, Equivalent


Part Number

MMBD914

Description

350mW 100 Volt Silicon Epitaxial Diode

Manufacture

Micro Commercial Components

Total Page 2 Pages
Datasheet
Download MMBD914 Datasheet


MMBD914
MCC
  omponents
21201 Itasca Street Chatsworth

  !"#
$ %    !"#
MMBD914
Features
Low Current Leakage
Low Cost
Small Outline Surface Mount Package
Pin Configuration
Top View
C
5D
A
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Maximum Thermal Resistance; 357K/W Junction To Ambient
350mW 100 Volt
Silicon Epitaxial Diode
SOT-23
A
D
CB
FE
Electrical Characteristics @ 25°C Unless Otherwise Specified
Reverse Voltage
Peak Reverse
Voltage
VR 75V
VRM 100V
Average Rectified
Current
IO 150mA Resistive Load
f > 50Hz
Power Dissipation
Junction
Temperature
PTOT
TJ
350mW
175°C
Peak Forward Surge
Current
IFSM
1.0A t=1s,Non-Repetitive
Maximum
Instantaneous
Forward Voltage
Maximum DC
VF .855V IFM = 10mA;
TJ = 25°C*
Reverse Current At IR 25nA TJ = 25°C
Rated DC Blocking
VR =20Volts
Voltage
Typical Junction
CJ 2pF Measured at
Capacitance
1.0MHz, VR=0V
Reverse Recovery Trr 4nS IF=10mA
Time
VR = 6V
RL=100
*Pulse test: Pulse width 300 µsec, Duty cycle 2%
G HJ
DIMENSIONS
INCHES
DIM MIN
MAX
A .110 .120
B .083 .098
C .047 .055
D .035 .041
E .070 .081
F .018 .024
G
.0005
.0039
H .035 .044
J .003 .007
K .015 .020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
Suggested Solder
Pad Layout
.031
.800
NOTE
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
www.mccsemi.com

MMBD914
MMBD914
MCC
1000
10,000
100
10
1.0
0.1
0.01
0
12
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Forward Characteristics
1000
100
10
VR = 20V
1
0 100 200
Tj, JUNCTION TEMPERATURE (°C)
Fig. 2 Leakage Current vs Junction Temperature
www.mccsemi.com


Features MCC Features • • •   omponents 21201 Itasca Street Chats worth    !"# $ %    !"# MMBD914 Low Cu rrent Leakage Low Cost Small Outline Su rface Mount Package C Pin Configuration Top View 350mW 100 Volt Silicon Epita xial Diode SOT-23 A D 5D A • • Maximum Ratings C B Operating Tem perature: -55 °C to +150°C Storage Te mperature: -55°C to +150°C Maximum Th ermal Resistance; 357K/W Junction To Am bient F E Electrical Characteristics @ 25°C Unless Otherwise Specified Rev erse Voltage Peak Reverse Voltage Avera ge Rectified Current Power Dissipation Junction Temperature Peak Forward Surge Current Maximum Instantaneous Forward Voltage Maximum DC Reverse Current At R ated DC Blocking Voltage Typical Juncti on Capacitance Reverse Recovery Time VR VRM IO PTOT TJ IFSM 75V 100V 150mA 350 mW 175°C 1.0A t=1s,Non-Repetitive Resi stive Load f > 50Hz G H J DIMENSION S INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MM MIN 2.80 2.10 .
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