MMBD914 Switching Diode Datasheet

MMBD914 Datasheet, PDF, Equivalent


Part Number

MMBD914

Description

Silicon Switching Diode

Manufacture

Infineon Technologies AG

Total Page 6 Pages
Datasheet
Download MMBD914 Datasheet


MMBD914
Silicon Switching Diode
For high-speed switching applications
Pb-free (RoHS compliant) package1)
Qualified according AEC Q101
SMBD914/MMBD914...
SMBD914/MMBD914
!

Type
SMBD914/MMBD914
Package
SOT23
Configuration
single
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Peak reverse voltage
Forward current
Non-repetitive peak surge forward current
t = 1 µs
t=1s
VR
VRM
IF
IFSM
Total power dissipation
TS 54°C
Junction temperature
Storage temperature
Ptot
Tj
Tstg
Thermal Resistance
Parameter
Junction - soldering point2)
SMBD914/MMBD914
Symbol
RthJS
1Pb-containing package may be available upon special request
2For calculation of RthJA please refer to Application Note Thermal Resistance
Value
100
100
250
4.5
0.5
370
150
-65 ... 150
Value
260
Marking
s5D
Unit
V
mA
A
mW
°C
Unit
K/W
1 2007-03-28

MMBD914
SMBD914/MMBD914...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Breakdown voltage
V(BR)
100 -
-
I(BR) = 100 µA
Reverse current
IR
VR = 20 V
- - 0.025
VR = 75 V
- - 0.1
VR = 20 V, TA = 150 °C
- - 30
VR = 75 V, TA = 150 °C
- - 50
Forward voltage
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 100 mA
IF = 150 mA
VF
- - 715
- - 855
- - 1000
- - 1200
- - 1250
Unit
V
µA
mV
AC Characteristics
Diode capacitance
VR = 0 V, f = 1 MHz
Reverse recovery time
IF = 10 mA, IR = 10 mA, measured at IR = 1mA ,
RL = 100
CT
trr
- - 2 pF
- - 4 ns
Test circuit for reverse recovery time
D.U.T.
Oscillograph
ΙF
Pulse generator: tp = 100ns, D = 0.05, tr = 0.6ns,
Ri = 50
Oscillograph: R = 50, tr = 0.35ns, C 1pF
EHN00019
2 2007-03-28


Features Silicon Switching Diode • For high-spe ed switching applications • Pb-free ( RoHS compliant) package1) • Qualified according AEC Q101 SMBD914/MMBD914... SMBD914/MMBD914 !  Type SMBD914/MM BD914 Package SOT23 Configuration sin gle Maximum Ratings at TA = 25°C, unl ess otherwise specified Parameter Sym bol Diode reverse voltage Peak reverse voltage Forward current Non-repetitive peak surge forward current t = 1 µs t =1s VR VRM IF IFSM Total power dissip ation TS ≤ 54°C Junction temperature Storage temperature Ptot Tj Tstg The rmal Resistance Parameter Junction - so ldering point2) SMBD914/MMBD914 Symbol RthJS 1Pb-containing package may be a vailable upon special request 2For calc ulation of RthJA please refer to Applic ation Note Thermal Resistance Value 10 0 100 250 4.5 0.5 370 150 -65 ... 150 V alue ≤ 260 Marking s5D Unit V mA A m W °C Unit K/W 1 2007-03-28 SMBD914/M MBD914... Electrical Characteristics a t TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ..
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