MMBD914LT1 Switching Diode Datasheet

MMBD914LT1 Datasheet, PDF, Equivalent


Part Number

MMBD914LT1

Description

High-Speed Switching Diode

Manufacture

ON

Total Page 3 Pages
Datasheet
Download MMBD914LT1 Datasheet


MMBD914LT1
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MMBD914LT1
Preferred Device
High−Speed Switching
Diode
Features
Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Symbol
VR
IF
IFM(surge)
Value
100
200
500
Unit
Vdc
mAdc
mAdc
Characteristic
Total Device Dissipation
FR−5 Board (Note 1)
TA = 25°C
Derate above 25°C
Symbol
PD
Max
225
Unit
mW
1.8 mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Range
RqJA
TJ, Tstg
417
−55 to +150
°C/W
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(IR = 100 mAdc)
Reverse Voltage Leakage Current
(VR = 20 Vdc)
(VR = 75 Vdc)
V(BR) 100 −
Vdc
IR
25 nAdc
5.0 mAdc
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CT
Forward Voltage
(IF = 10 mAdc)
VF
Reverse Recovery Time
(IF = IR = 10 mAdc) (Figure 1)
trr
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
− 4.0 pF
− 1.0 Vdc
− 4.0 ns
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 5
1
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3
CATHODE
1
ANODE
3
1
2
SOT−23
CASE 318
STYLE 8
MARKING DIAGRAM
5D M G
G
1
5D = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
MMBD914LT1
Package
SOT−23
Shipping
3000/Tape & Reel
MMBD914LT1G SOT−23 3000/Tape & Reel
(Pb−Free)
MMBD914LT3 SOT−23 10,000/Tape & Reel
MMBD914LT3G SOT−23 10,000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MMBD914LT1/D

MMBD914LT1
+10 V
820 W
2.0 k
100 mH
0.1 mF
IF
50 W OUTPUT
PULSE
GENERATOR
DUT
MMBD914LT1
0.1 mF
tr tp
10%
t
50 W INPUT
SAMPLING
OSCILLOSCOPE
VR
90%
INPUT SIGNAL
IF
trr t
iR(REC) = 1.0 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
100 10
TA = 85°C
10
TA = −40°C
1.0
TA = 25°C
0.1
1.0
0.01
0.1
0.2
0.4 0.6 0.8 1.0
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
0.001
1.2 0
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
TA = 25°C
10 20 30 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
0.68
0.64
0.60
0.56
0.52
0
2.0 4.0 6.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
8.0
50
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2


Features www.DataSheet4U.com MMBD914LT1 Preferre d Device High−Speed Switching Diode Features • Pb−Free Package is Avai lable http://onsemi.com MAXIMUM RATINGS Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR I F IFM(surge) Value 100 200 500 Unit Vdc mAdc mAdc 3 Symbol PD Max 225 1.8 RqJA Total Device Dissipation Alumina Subst rate (Note 2) TA = 25°C Derate above 2 5°C Thermal Resistance, Junction−to Ambient RqJA Junction and Storage Tem perature Range TJ, Tstg 417 −55 to +1 50 PD 556 300 2.4 Unit mW mW/°C °C/W mW 1 2 SOT−23 CASE 318 STYLE 8 3 CATH ODE 1 ANODE THERMAL CHARACTERISTICS Ch aracteristic Total Device Dissipation F R−5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junctio n−to−Ambient MARKING DIAGRAM mW/° C °C/W °C 1 5D M G G Maximum rating s are those values beyond which device damage can occur. Maximum ratings appli ed to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these li.
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