TMOS MOSFET. MMBF0201 Datasheet


MMBF0201 MOSFET. Datasheet pdf. Equivalent


Part Number

MMBF0201

Description

N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET

Manufacture

Motorola

Total Page 6 Pages
Datasheet
Download MMBF0201 Datasheet


MMBF0201
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBF0201N/D
Low rDS(on) Small-Signal MOSFETs
TMOS Single N-Channel
Field Effect Transistors
These miniature surface mount MOSFETs utilize Motorola’s High
Cell Density, HDTMOS process. Low rDS(on) assures minimal
power loss and conserves energy, making this device ideal for use
in small power management circuitry. Typical applications are
dc–dc converters, power management in portable and battery–
powered products such as computers, printers, PCMCIA cards,
cellular and cordless telephones.
Low rDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature SOT–23 Surface Mount Package Saves Board Space
3 DRAIN
1
GATE
MMBF0201N
Motorola Preferred Device
N–CHANNEL
ENHANCEMENT–MODE
TMOS MOSFET
rDS(on) = 1.0 OHM
3
1
2
CASE 318–07, Style 21
SOT–23 (TO–236AB)
2 SOURCE
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Drain–to–Source Voltage
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 70°C
Drain Current — Pulsed Drain Current (tp 10 µs)
Total Power Dissipation @ TA = 25°C(1)
Operating and Storage Temperature Range
Thermal Resistance — Junction–to–Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8from case for 10 seconds
DEVICE MARKING
N1
(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
Device
MMBF0201NLT1
MMBF0201NLT3
ORDERING INFORMATION
Reel Size
Tape Width
712 mm embossed tape
1312 mm embossed tape
Quantity
3000
10,000
Symbol
VDSS
VGS
ID
ID
IDM
PD
TJ, Tstg
RθJA
TL
Value
20
± 20
300
240
750
225
– 55 to 150
625
260
Unit
Vdc
Vdc
mAdc
mW
°C
°C/W
°C
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a registered trademark of the Berquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMotootorroollaa, SInmc. 1a9ll95Signal Transistors, FETs and Diodes Device Data
1

MMBF0201
MMBF0201N
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 µA)
Zero Gate Voltage Drain Current
(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 300 mAdc)
(VGS = 4.5 Vdc, ID = 100 mAdc)
Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 5.0 V)
(VDS = 5.0 V)
Transfer Capacitance
(VDG = 5.0 V)
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
(VDD = 15 Vdc, ID = 300 mAdc,
RL = 50 )
Fall Time
Gate Charge (See Figure 5)
SOURCE–DRAIN DIODE CHARACTERISTICS
Continuous Current
Pulsed Current
Forward Voltage(2)
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
rDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
IS
ISM
VSD
Min
20
1.0
Typ Max Unit
— — Vdc
µAdc
— 1.0
— 10
±100
nAdc
1.7 2.4 Vdc
Ohms
0.75 1.0
1.0 1.4
450 — mMhos
45 — pF
25 —
5.0 —
2.5
2.5
15
0.8
1400
ns
pC
— 0.3
— 0.75
0.85 —
A
V
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBF0201N/D Low rDS(on) Small-Signal MOSFETs TMOS Sing le N-Channel Field Effect Transistors T hese miniature surface mount MOSFETs ut ilize Motorola’s High Cell Density, H DTMOS process. Low rDS(on) assures mini mal power loss and conserves energy, ma king this device ideal for use in small power management circuitry. Typical ap plications are dc–dc converters, powe r management in portable and battery– powered products such as computers, pr inters, PCMCIA cards, cellular and cord less telephones. • Low rDS(on) Provid es Higher Efficiency and Extends Batter y Life • Miniature SOT–23 Surface M ount Package Saves Board Space MMBF020 1N Motorola Preferred Device N–CHANN EL ENHANCEMENT–MODE TMOS MOSFET rDS(o n) = 1.0 OHM ™ 3 3 DRAIN 1 2 CASE 318–07, Style 21 SOT–23 (TO–236AB ) 1 GATE 2 SOURCE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain–to–Source Voltage Gate–to–Source Voltage — Continuous Drain Current — Continuous @.
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