TMOS MOSFET. MMBF0202PLT1 Datasheet


MMBF0202PLT1 MOSFET. Datasheet pdf. Equivalent


MMBF0202PLT1


P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
MOTOROLA

SEMICONDUCTOR TECHNICAL DATA
™

Order this document by MMBF0202PLT1/D

Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors
Part of the GreenLine™ Portfolio of devices with energy–conserving traits. These miniature surface mount MOSFETs utilize Motorola’s High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dc–dc converters, power management in portable and battery– powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • Low rDS(on) Provides Higher Efficiency and Extends Battery Life • Miniature SOT–23 Surface Mount Package Saves Board Space
1 GATE 2 SOURCE

MMBF0202PLT1
Motorola Preferred Device

P–CHANNEL ENHANCEMENT–MODE TMOS MOSFET rDS(on) = 1.4 OHM

™
3

3 DRAIN
1 2

CASE 318–07, Style 21 SOT–23 (TO–236AB)

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Drain–to–Source Voltage Gate–to–Source Voltage — Continuous Drain Current — Continuous @ TA = 25°C Drain Current — Continuous @ TA = 70°C Drain Current — Pulsed Drain Current (tp ≤ 10 µs) Total Power Dissipation @ TA = 25°C(1) Operating and Storage Temperature Range Thermal Resistance — Junction–to–Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VGS ID...



MMBF0202PLT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBF0202PLT1/D
Low rDS(on) Small-Signal MOSFETs
TMOS Single P-Channel
Field Effect Transistors
Part of the GreenLinePortfolio of devices with energy–con-
serving traits.
These miniature surface mount MOSFETs utilize Motorola’s High
Cell Density, HDTMOS process. Low rDS(on) assures minimal
power loss and conserves energy, making this device ideal for use
in small power management circuitry. Typical applications are
dc–dc converters, power management in portable and battery–
powered products such as computers, printers, PCMCIA cards,
cellular and cordless telephones.
Low rDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature SOT–23 Surface Mount Package Saves Board Space
1
GATE
3 DRAIN
MMBF0202PLT1
Motorola Preferred Device
P–CHANNEL
ENHANCEMENT–MODE
TMOS MOSFET
rDS(on) = 1.4 OHM
3
1
2
CASE 318–07, Style 21
SOT–23 (TO–236AB)
2 SOURCE
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Drain–to–Source Voltage
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 70°C
Drain Current — Pulsed Drain Current (tp 10 µs)
Total Power Dissipation @ TA = 25°C(1)
Operating and Storage Temperature Range
Thermal Resistance — Junction–to–Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8from case for 10 seconds
DEVICE MARKING
P3
(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MMBF0202PLT1
712 mm embossed tape
3000
MMBF0202PLT3
1312 mm embossed tape
10,000
GreenLine is a trademark of Motorola, Inc.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a registered trademark of the Berquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
(Replaces MMBF0202P/D)
©MMotootorroollaa, SInmc. 1a9ll95Signal Transistors, FETs and Diodes Device Data
Symbol
VDSS
VGS
ID
ID
IDM
PD
TJ, Tstg
RθJA
TL
Value
20
± 20
300
240
750
225
– 55 to 150
625
260
Unit
Vdc
Vdc
mAdc
mW
°C
°C/W
°C
1

MMBF0202PLT1
MMBF0202PLT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 µA)
Zero Gate Voltage Drain Current
(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 200 mAdc)
(VGS = 4.5 Vdc, ID = 50 mAdc)
Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 5.0 V)
(VDS = 5.0 V)
Transfer Capacitance
(VDG = 5.0 V)
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDD = –15 Vdc,
RL = 75 , ID = 200 mAdc,
VGEN = –10 V, RG = 6.0 )
Gate Charge (See Figure 5)
(VDS = 16 V, VGS = 10 V,
ID = 200 mA)
SOURCE–DRAIN DIODE CHARACTERISTICS
Continuous Current
Pulsed Current
Forward Voltage(2)
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
rDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
IS
ISM
VSD
Min
20
1.0
Typ Max Unit
— — Vdc
µAdc
— 1.0
— 10
±100
nAdc
1.7 2.4 Vdc
Ohms
0.9 1.4
2.0 3.5
600 — mMhos
50 — pF
45 —
20 —
2.5
1.0
16
8.0
2700
ns
pC
— 0.3
— 0.75
1.5 —
A
V
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data




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