MMBF170 EFFECT TRANSISTOR Datasheet

MMBF170 Datasheet, PDF, Equivalent


Part Number

MMBF170

Description

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Manufacture

Diodes Incorporated

Total Page 5 Pages
Datasheet
Download MMBF170 Datasheet


MMBF170
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
MMBF170
N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
Case: SOT23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
SOT23
Top View
 D
G
S
Equivalent Circuit
D
GS
Top View
Ordering Information (Note 4)
Notes:
Part Number
MMBF170-7-F
MMBF170-13-F
Case
SOT23
SOT23
Packaging
3000/Tape & Reel
10000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Chengdu A/T Site
Shanghai A/T Site
K6Z = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y̅ M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y̅ = Year (ex: A = 2014)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
1998
J
Jan
1
1999 2000 2001
K LM
Feb Mar
23
2002
N
Apr
4
2003 2004 2011 2012
P
R…
Y
Z
May Jun
56
Jul Aug
78
2013 2014 2015 2016 2017
ABCDE
Sep Oct Nov Dec
9OND
MMBF170
Document number: DS30104 Rev. 14 - 2
1 of 5
www.diodes.com
May 2014
© Diodes Incorporated

MMBF170
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Drain-Gate Voltage RGS 1.0M
Gate-Source Voltage
Drain Current (Note 5)
Continuous
Pulsed
Continuous
Pulsed
Symbol
VDSS
VDGR
VGSS
ID
Value
60
60
20
40
500
800
MMBF170
Units
V
V
V
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
PD
RθJA
TJ, TSTG
Value
300
1.80
417
-55 to +150
Units
mW
mW/°C
K/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Time
Turn-Off Time
Symbol Min Typ Max Unit
Test Condition
BVDSS 60 70 V VGS = 0V, ID = 100μA
IDSS
  1.0 µA VDS = 60V, VGS = 0V
IGSS
  10 nA VGS = 15V, VDS = 0V
VGS(th) 0.8 2.1 3.0
V VDS = VGS, ID = 250μA
RDS (ON)

 5.0
5.3
VGS = 10V, ID = 200mA
VGS = 4.5V, ID = 50mA
gFS 80   mS VDS =10V, ID = 0.2A
Ciss
Coss
Crss
22 40 pF
11 30 pF VDS = 10V, VGS = 0V, f = 1.0MHz
2.0 5.0 pF
ton   10 ns VDD = 25V, ID = 0.5A,
toff   10 ns VGS = 10V, RGEN = 50
Notes:
5. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our
website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
MMBF170
Document number: DS30104 Rev. 14 - 2
2 of 5
www.diodes.com
May 2014
© Diodes Incorporated


Features Features  Low On-Resistance  Low G ate Threshold Voltage  Low Input Cap acitance  Fast Switching Speed  L ow Input/Output Leakage  Totally Lea d-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “ Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliabil ity MMBF170 N-CHANNEL ENHANCEMENT MODE MOSFET Mechanical Data  Case: SOT23  Case Material: Molded Plastic. UL Flammability Classification Rating 94V- 0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Matte Tin Fin ish annealed over Alloy 42 leadframe (L ead Free Plating). Solderable per MIL-S TD-202, Method 208  Terminal Connect ions: See Diagram  Weight: 0.008 gra ms (approximate) SOT23 Top View  D G S Equivalent Circuit D GS Top View O rdering Information (Note 4) Notes: P art Number MMBF170-7-F MMBF170-13-F Ca se SOT23 SOT23 Packaging 3000/Tape & R eel 10000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (.
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