MMBF170 Effect Transistor Datasheet

MMBF170 Datasheet, PDF, Equivalent


Part Number

MMBF170

Description

N-Channel Enhancement Mode Field Effect Transistor

Manufacture

Fairchild

Total Page 14 Pages
Datasheet
Download MMBF170 Datasheet


MMBF170
March 2010
BS170 / MMBF170
N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. These products have been
designed to minimize on-state resistance while provide
rugged, reliable, and fast switching performance. They can
be used in most applications requiring up to 500mA DC.
These products are particularly suited for low voltage, low
current applications such as small servo motor control,
power MOSFET gate drivers, and other switching
applications.
Features
High density cell design for low RDS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
BS170
MMBF170
D
D
GS
TO-92
S
SOT-23
G
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
BS170
MMBF170
VDSS
VDGR
VGSS
ID
Drain-Source Voltage
Drain-Gate Voltage (RGS 1MΩ)
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
500
1200
60
60
± 20
500
800
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
- 55 to 150
300
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
BS170
PD Maximum Power Dissipation
Derate above 25°C
830
6.6
RθJA
Thermal Resistance, Junction to Ambient
150
MMBF170
300
2.4
417
Units
V
V
V
mA
°C
°C
Units
mW
mW/°C
°C/W
© 2010 Fairchild Semiconductor Corporation
BS170 / MMBF170 Rev. E2
1
www.fairchildsemi.com

MMBF170
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Conditions
Type Min.
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSSF Gate - Body Leakage, Forward
ON CHARACTERISTICS (Notes 1)
VGS = 0V, ID = 100μA
VDS = 25V, VGS = 0V
VGS = 15V, VDS = 0V
All 60
All
All
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 1mA
RDS(ON) Static Drain-Source On-Resistance VGS = 10V, ID = 200mA
gFS Forward Transconductance
VDS = 10V, ID = 200mA
VDS 2 VDS(on),
ID = 200mA
Dynamic Characteristics
All
All
BS170
MMBF170
0.8
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics (Notes 1)
VDS = 10V, VGS = 0V,
f = 1.0MHz
All
All
All
ton Turn-On Time
toff Turn-Off Time
VDD = 25V, ID = 200mA,
VGS = 10V, RGEN = 25Ω
VDD = 25V, ID = 500mA,
VGS = 10V, RGEN = 50Ω
VDD = 25V, ID = 200mA,
VGS = 10V, RGEN = 25Ω
VDD = 25V, ID = 500mA,
VGS = 10V, RGEN = 50Ω
BS170
MMBF170
BS170
MMBF170
Typ.
2.1
1.2
320
320
24
17
7
Max. Units
V
0.5 μA
10 nA
3V
5Ω
mS
40 pF
30 pF
10 pF
10 ns
10
10 ns
10
Note:
1. Pulse Test: Pulse Width 300μs, Duty Cycle 2.0%.
Ordering Information
Part Number
Package
BS170
TO-92
BS170_D26Z
TO-92
BS170_D27Z
TO-92
BS170_D74Z
TO-92
BS170_D75Z
TO-92
MMBF170
SOT-23
Package Type
BULK
Tape and Reel
Tape and Reel
AMMO
AMMO
Tape and Reel
Lead Frame
STRAIGHT
FORMING
FORMING
FORMING
FORMING
Pin array
DGS
DGS
DGS
DGS
DGS
© 2010 Fairchild Semiconductor Corporation
BS170 / MMBF170 Rev. E2
2
www.fairchildsemi.com


Features BS170 / MMBF170 — N-Channel Enhancemen t Mode Field Effect Transistor March 2 010 BS170 / MMBF170 N-Channel Enhanceme nt Mode Field Effect Transistor Genera l Description These N-Channel enhanceme nt mode field effect transistors are pr oduced using Fairchild's proprietary, h igh cell density, DMOS technology. Thes e products have been designed to minimi ze on-state resistance while provide ru gged, reliable, and fast switching perf ormance. They can be used in most appli cations requiring up to 500mA DC. These products are particularly suited for l ow voltage, low current applications su ch as small servo motor control, power MOSFET gate drivers, and other switchin g applications. Features ■ High dens ity cell design for low RDS(ON). ■ Vo ltage controlled small signal switch. Rugged and reliable. ■ High satura tion current capability. BS170 MMBF17 0 D D GS TO-92 S SOT-23 G Absolute Maximum Ratings TA = 25°C unless othe rwise noted Symbol Parameter BS170 MMBF170 VDSS VDGR VGSS ID Drain-S.
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